Research Output 1994 2020

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Conference contribution
2012
3 Citations (Scopus)

Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Nakashima, H., Yamamoto, K., Yang, H. & Wang, D., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. Vol. 50. p. 205-216 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermal diffusion
Carrier mobility
Passivation
Ion implantation
Fabrication
2011

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., Jul 1 2011, China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 ed. p. 1117-1122 6 p. (ECS Transactions; vol. 34, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance

Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., Mar 23 2011, Technology Evolution for Silicon Nano-Electronics. p. 79-84 6 p. (Key Engineering Materials; vol. 470).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Annealing
Defects
Personal digital assistants
Hole concentration
2010

Defect characterization and control for SiGe-on-insulator

Wang, D., Yang, H. & Nakashima, H., Dec 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 1525-1528 4 p. 5667501. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
Hole concentration
Condensation
Annealing
Oxidation

Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique

Yang, H., Wang, D. & Nakashima, H., Dec 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 905-907 3 p. 5667472. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hole mobility
Condensation
2009
1 Citation (Scopus)

Optical and electrical characterizations of defects in SiGe-On-InsuIator

Nakashima, H., Wang, D. & Yang, H., Dec 1 2009, ECS Transactions - ULSI Process Integration 6. 7 ed. Vol. 25. p. 99-114 16 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
MOSFET devices
Condensation
Annealing
Hole concentration
2008
1 Citation (Scopus)

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K. & Wang, D., Dec 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 780-783 4 p. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

Wang, D., Yang, H., Morioka, J., Kitamura, T. & Nakashima, H., Dec 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 684-687 4 p. 4734646. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser excitation
ultraviolet lasers
membranes
Membranes
evaluation
2007

Photoluminescence evaluation of defects generated during temperature ramp-up process of SiGe-on-insulator virtual substrate fabrication

Wang, D., Ii, S., Ikeda, K. I., Nakashima, H. & Nakashima, H., Aug 2 2007, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 2193-2195 3 p. 4098665

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photoluminescence
Fabrication
Defects
Substrates
Annealing