Research Output 1994 2020

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2019

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBE05.

Research output: Contribution to journalArticle

Open Access
Electroluminescence
Diodes
diodes
insulators
Fabrication
Open Access
Field effect transistors
field effect transistors
insulators
space transportation system
Metals

Microstructural studies of core/rim structure of polycarbosilane-derived SiC consolidated by spark plasma sintering

Lee, J. H., Lee, Y., Han, Y. H., Shin, D. G., Kim, S. & Jang, B., Jun 15 2019, In : Ceramics International. 45, 9, p. 12406-12410 5 p.

Research output: Contribution to journalArticle

Spark plasma sintering
Silicon carbide
Sintering
Carbon
Powders

Non-uniform sintering behavior during spark plasma sintering of Y2O3

Lee, J. H., Kim, B. N. & Jang, B. K., Jan 1 2019, (Accepted/In press) In : Ceramics International. 46, 3, p. 4030-4034 5 p.

Research output: Contribution to journalArticle

Spark plasma sintering
Heating rate
Sintering
Microstructure
Grain growth
3 Citations (Scopus)

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., May 27 2019, In : Applied Physics Letters. 114, 21, 212107.

Research output: Contribution to journalArticle

Open Access
solid phases
transistors
glass
thin films
hole mobility
2018
1 Citation (Scopus)

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., Nov 28 2018, In : Journal of Applied Physics. 124, 20, 205303.

Research output: Contribution to journalArticle

borders
metal oxide semiconductors
traps
capacitors
evaluation
1 Citation (Scopus)

Damage and wear resistance of Al2O3SiC microcomposites with hard and elastic properties

Elyas, H., Kim, T. W., Jang, B. K. & Lee, K. S., Jan 2018, In : Journal of the Ceramic Society of Japan. 126, 1, p. 21-26 6 p.

Research output: Contribution to journalArticle

wear resistance
Wear resistance
elastic properties
damage
composite materials
7 Citations (Scopus)

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c

Higashi, H., Kudo, K., Yamamoto, K., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., Jun 7 2018, In : Journal of Applied Physics. 123, 21, 215704.

Research output: Contribution to journalArticle

electrical properties
crystallization
transistors
contamination
leakage
6 Citations (Scopus)

Phase transformation on spark plasma sintered dense polycarbosilane-derived SiC without additive

Lee, Y., Lee, J. H., Shin, D. G., Noviyanto, A., Lee, H. M., Nishimura, T., Jang, B. K., Kwon, W. T., Kim, Y., Kim, S. & Han, Y. H., Jan 15 2018, In : Scripta Materialia. 143, p. 188-190 3 p.

Research output: Contribution to journalArticle

polycarbosilanes
sparks
Electric sparks
phase transformations
sintering
9 Citations (Scopus)

Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions

Sukma Aji, A., Izumoto, M., Suenaga, K., Yamamoto, K., Nakashima, H. & Ago, H., Jan 1 2018, In : Physical Chemistry Chemical Physics. 20, 2, p. 889-897 9 p.

Research output: Contribution to journalArticle

Heterojunctions
heterojunctions
synthesis
Chemical vapor deposition
vapor deposition
1 Citation (Scopus)
trajectory control
Sputter deposition
interlayers
Nitrogen
Metals
2017
1 Citation (Scopus)

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

Maekura, T., Tanaka, K., Motoyama, C., Yoneda, R., Yamamoto, K., Nakashima, H. & Wang, D., Aug 30 2017, In : Semiconductor Science and Technology. 32, 10, 104001.

Research output: Contribution to journalArticle

Electroluminescence
electroluminescence
Diodes
Energy gap
Metals
4 Citations (Scopus)

Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kasahara, K., Higashi, H., Nakano, M., Nagatomi, Y., Yamamoto, K., Nakashima, H. & Hamaya, K., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 68-72 5 p.

Research output: Contribution to journalArticle

Germanium
Hole mobility
hole mobility
germanium
Electric properties
4 Citations (Scopus)

Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

Kanashima, T., Yamashiro, R., Zenitaka, M., Yamamoto, K., Wang, D., Tadano, J., Yamada, S., Nohira, H., Nakashima, H. & Hamaya, K., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 260-264 5 p.

Research output: Contribution to journalArticle

Lutetium
Germanium
lutetium
germanium
Electric properties
2 Citations (Scopus)
Field effect transistors
field effect transistors
conduction
Fabrication
space transportation system
3 Citations (Scopus)

Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack

Nagatomi, Y., Tateyama, T., Tanaka, S., Wen, W. C., Sakaguchi, T., Yamamoto, K., Zhao, L., Wang, D. & Nakashima, H., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 246-253 8 p.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
field effect transistors
Annealing
Atoms
2016
1 Citation (Scopus)

Characteristics of bulk and coating in Gd2-xZr2+xO7+0.5x(x = 0.0, 0.5, 1.0) system for thermal barrier coatings

Kim, S. J., Lee, S. M., Oh, Y. S., Kim, H. T., Jang, B. K. & Kim, S., Nov 2016, In : Journal of the Korean Ceramic Society. 53, 6, p. 652-658 7 p.

Research output: Contribution to journalArticle

Thermal barrier coatings
Suspensions
Gadolinium
Zirconia
Coatings
2014
15 Citations (Scopus)

Characterization of multiwalled carbon nanotube-reinforced hydroxyapatite composites consolidated by spark plasma sintering

Kim, D. Y., Han, Y. H., Lee, J. H., Kang, I. K., Jang, B. K. & Kim, S., 2014, In : BioMed Research International. 2014, 768254.

Research output: Contribution to journalArticle

Carbon Nanotubes
Spark plasma sintering
Multiwalled carbon nanotubes (MWCN)
Durapatite
Composite materials
2 Citations (Scopus)

Effect of plasma pretreatment on thermal durability of thermal barrier coatings in cyclic thermal exposure

Myoung, S. W., Lu, Z., Jung, Y. G., Jang, B. K., Yoo, Y. S., Seo, S. M., Choi, B. G. & Jo, C. Y., 2014, In : Advances in Materials Science and Engineering. 2014, 593891.

Research output: Contribution to journalArticle

Thermal barrier coatings
Durability
Plasmas
Air
Hot Temperature
2013
4 Citations (Scopus)

Damage and wear resistance of Al2O3-CNT nanocomposites fabricated by spark plasma sintering

Lee, K. S., Jang, B. K. & Sakka, Y., Oct 2013, In : Journal of the Ceramic Society of Japan. 121, 1418, p. 867-872 6 p.

Research output: Contribution to journalArticle

Spark plasma sintering
sparks
wear resistance
Wear resistance
Nanocomposites

Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts

Nakashima, H., Yamamoto, K. & Wang, D., Jan 1 2013, In : ECS Transactions. 58, 9, p. 167-178 12 p.

Research output: Contribution to journalArticle

Fabrication
Carrier mobility
Fermi level
Metals
Electrons
2 Citations (Scopus)

Effect of carbon content on the tribological behavior of TiCxN1-x films prepared by arc-vapor deposition

Nguyen, X. H., Kim, I. K., Jang, B. K. & Oh, Y. S., Dec 2013, In : Journal of the Ceramic Society of Japan. 121, 1420, p. 961-967 7 p.

Research output: Contribution to journalArticle

Vapor deposition
Carbon
arcs
vapor deposition
Carbon nitride

Fabrication of metal-nitride/Si contacts with low electron barrier height

Yamamoto, K., Asakawa, K., Wang, D. & Nakashima, H., Jan 1 2013, In : ECS Transactions. 58, 9, p. 53-59 7 p.

Research output: Contribution to journalArticle

Nitrides
Fabrication
Electrons
Metals
Sputtering
2012
15 Citations (Scopus)
MIS (semiconductors)
passivity
capacitors
spectroscopy
traps
21 Citations (Scopus)

Fabrication of TiN/Ge contact with extremely low electron barrier height

Yamamoto, K., Harada, K., Yang, H., Wang, D. & Nakashima, H., Jul 1 2012, In : Japanese journal of applied physics. 51, 7 PART 1, 070208.

Research output: Contribution to journalArticle

Leakage currents
Fabrication
fabrication
Electrons
Surface states
4 Citations (Scopus)
Hole mobility
hole mobility
Condensation
condensation
insulators
16 Citations (Scopus)

Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures

Yamamoto, K., Yamanaka, T., Harada, K., Sada, T., Sakamoto, K., Kojima, S., Yang, H., Wang, D. & Nakashima, H., May 1 2012, In : Applied Physics Express. 5, 5, 051301.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
field effect transistors
Sputter deposition
MOS devices
8 Citations (Scopus)

Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors

Yamamoto, K., Yamanaka, T., Ueno, R., Hirayama, K., Yang, H., Wang, D. & Nakashima, H., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3382-3386 5 p.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
field effect transistors
Leakage currents
Fabrication
2011

Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., Nov 22 2011, In : Journal of the Electrochemical Society. 158, 12, p. H1221-H1224

Research output: Contribution to journalArticle

Strain relaxation
Photoluminescence
insulators
photoluminescence
Defects
2 Citations (Scopus)

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., Jun 1 2011, In : Solid-State Electronics. 60, 1, p. 128-133 6 p.

Research output: Contribution to journalArticle

Passivation
passivity
insulators
Annealing
Defects
23 Citations (Scopus)

Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

Hirayama, K., Ueno, R., Iwamura, Y., Yoshino, K., Wang, D., Yang, H. & Nakashima, H., Apr 1 2011, In : Japanese Journal of Applied Physics. 50, 4 PART 2, 04DA10.

Research output: Contribution to journalArticle

Passivation
metal oxide semiconductors
passivity
capacitors
Capacitors
19 Citations (Scopus)

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Hirayama, K., Yoshino, K., Ueno, R., Iwamura, Y., Yang, H., Wang, D. & Nakashima, H., Jun 1 2011, In : Solid-State Electronics. 60, 1, p. 122-127 6 p.

Research output: Contribution to journalArticle

MOS capacitors
Passivation
Magnetron sputtering
passivity
capacitors
30 Citations (Scopus)
MOSFET devices
Passivation
metal oxide semiconductors
passivity
field effect transistors
3 Citations (Scopus)
Strain relaxation
Electron diffraction
Membranes
Finite element method
Transmission electron microscopy
42 Citations (Scopus)

Ohmic contact formation on n-type Ge by direct deposition of TiN

Iyota, M., Yamamoto, K., Wang, D., Yang, H. & Nakashima, H., May 9 2011, In : Applied Physics Letters. 98, 19, 192108.

Research output: Contribution to journalArticle

electric contacts
annealing
p-n junctions
interlayers
temperature
18 Citations (Scopus)

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Nakashima, H., Iwamura, Y., Sakamoto, K., Wang, D., Hirayama, K., Yamamoto, K. & Yang, H., Jun 20 2011, In : Applied Physics Letters. 98, 25, 252102.

Research output: Contribution to journalArticle

metal oxide semiconductors
passivity
capacitors
annealing
nitrogen atoms
2010

325 nm-laser-excited micro-photoluminescence for strained Si films

Wang, D., Yang, H., Kitamura, T. & Nakashima, H., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2470-2473 4 p.

Research output: Contribution to journalArticle

Photoluminescence
photoluminescence
Lasers
lasers
Laser excitation
10 Citations (Scopus)

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Yang, H., Wang, D., Nakashima, H., Hirayama, K., Kojima, S. & Ikeura, S., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2342-2345 4 p.

Research output: Contribution to journalArticle

Personal digital assistants
insulators
Annealing
Defects
annealing
8 Citations (Scopus)

Dispersion and shortening of multi-walled carbon nanotubes by size modification

Jang, B. K. & Sakka, Y., Jan 1 2010, In : Materials Transactions. 51, 1, p. 192-195 4 p.

Research output: Contribution to journalArticle

Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
Suspensions
shear

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Hirayama, K., Kira, W., Yoshino, K., Yang, H., Wang, D. & Nakashima, H., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2505-2508 4 p.

Research output: Contribution to journalArticle

Gate dielectrics
interlayers
Annealing
annealing
Electron cyclotron resonance
2 Citations (Scopus)

Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain

Wang, D., Yang, H., Kitamura, T. & Nakashima, H., Feb 24 2010, In : Journal of Applied Physics. 107, 3, 033511.

Research output: Contribution to journalArticle

thick films
excitons
photoluminescence
penetration
lasers
Electron diffraction
finite element method
electron diffraction
membranes
Membranes
1 Citation (Scopus)

Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Gao, H., Ikeda, K. I., Hata, S., Nakashima, H., Wang, D. & Nakashima, H., Sep 1 2010, In : Materials Science and Engineering A. 527, 24-25, p. 6633-6637 5 p.

Research output: Contribution to journalArticle

strain distribution
membranes
Membranes
microstructure
Microstructure
3 Citations (Scopus)

Passivation of electrically active defects in Ge-Rich SiGe-on-insulator by Al2O3 deposition and subsequent post-deposition annealing

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., Jul 1 2010, In : Applied Physics Express. 3, 7, 071302.

Research output: Contribution to journalArticle

Passivation
passivity
insulators
Annealing
Defects
2 Citations (Scopus)

Strain distribution in freestanding Si/SixNy membranes studied by transmission electron microscopy

Gao, H., Ikeda, K. I., Hata, S., Nakashima, H., Wang, D. & Nakashima, H., Sep 30 2010, In : Thin Solid Films. 518, 23, p. 6787-6791 5 p.

Research output: Contribution to journalArticle

strain distribution
membranes
Transmission electron microscopy
Membranes
transmission electron microscopy
2009
22 Citations (Scopus)
condensation
insulators
metal oxide semiconductors
Hall effect
field effect transistors
4 Citations (Scopus)
Condensation
Photoluminescence
condensation
insulators
photoluminescence
2008
9 Citations (Scopus)

Dependences of effective work functions of TaN on HfO2 and SiO2 on post-metallization anneal

Sugimoto, Y., Kajiwara, M., Yamamoto, K., Suehiro, Y., Wang, D. & Nakashima, H., Nov 3 2008, In : Thin Solid Films. 517, 1, p. 204-206 3 p.

Research output: Contribution to journalArticle

Metallizing
Wet etching
Oxides
Structural properties
Electric properties
3 Citations (Scopus)
Gate dielectrics
Oxides
Annealing
Plasmas
Oxidation
28 Citations (Scopus)

Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator

Yang, H., Wang, D., Nakashima, H., Gao, H., Hirayama, K., Ikeda, K. I., Hata, S. & Nakashima, H., Sep 1 2008, In : Applied Physics Letters. 93, 7, 072104.

Research output: Contribution to journalArticle

hole mobility
passivity
insulators
metal oxide semiconductors
field effect transistors