IFC(Internationalization and Future Conception)

Research Output 1987 2019

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Paper
2004

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Wang, D., Ninomiya, M., Nakamae, M. & Nakashima, H., Dec 1 2004, p. 2148-2150. 3 p.

Research output: Contribution to conferencePaper

Interface states
Capacitance
Metals
Deep level transient spectroscopy
Fabrication