Research Output 1980 2020

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1980
4 Citations (Scopus)

Carrier compensation in O+ implanted n-type GaAs

Asano, T. & Hemment, P. L. F., Jan 1 1980, In : Solid-State Electronics. 23, 10, p. 1089-1090 2 p.

Research output: Contribution to journalArticle

electrical measurement
oxygen atoms
Annealing
Oxygen
dosage
1981
18 Citations (Scopus)

Formation of thick, thermally-stable high-resistivity-layers in GaAs by oxygen ion implantation

Asano, T., Atanassov, R. D., Ishiwara, H. & Furukawa, S., Jan 1 1981, In : Japanese Journal of Applied Physics. 20, 5, p. 901-907 7 p.

Research output: Contribution to journalArticle

oxygen ions
Ion implantation
ion implantation
implantation
electrical resistivity
46 Citations (Scopus)

Single crystalline silicide formation

Saitoh, S., Ishiwara, H., Asano, T. & Furukawa, S., Sep 1981, In : Japanese Journal of Applied Physics. 20, 9, p. 1649-1656 8 p.

Research output: Contribution to journalArticle

Crystalline materials
backscattering
Transmission electron microscopy
Thin films
transmission electron microscopy
1982
19 Citations (Scopus)

Epitaxial growth of ge films onto caf 2/si structures

Asano, T. & Ishiwara, H., Oct 1982, In : Japanese Journal of Applied Physics. 21, 10, p. L630-L632

Research output: Contribution to journalArticle

Epitaxial growth
Crystalline materials
Vacuum evaporation
Substrates
surface roughness
10 Citations (Scopus)

Formation of an epitaxial si/insulator/si structure by vacuum deposition of caf2 and si

Asano, T. & Ishiwara, H., Jan 1 1982, In : Japanese Journal of Applied Physics. 21, 1 p.

Research output: Contribution to journalArticle

Vacuum deposition
vacuum deposition
insulators
Rutherford backscattering spectroscopy
Substrates
1983
84 Citations (Scopus)

HETEROEPITAXIAL GROWTH OF GROUP-IIa-FLUORIDE FILMS ON Si SUBSTRATES.

Asano, T., Ishiwara, H. & Kaifu, N., Jan 1 1983, In : Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 22, 10, p. 1474-1481 8 p.

Research output: Contribution to journalArticle

Epitaxial growth
Substrates
Crystallites
Crystal orientation
crystallites
2 Citations (Scopus)

Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation

Ishiwara, H., Orihara, K. & Asano, T., Jul 1983, In : Japanese Journal of Applied Physics. 22, 7, p. L458-L460

Research output: Contribution to journalArticle

Radiation damage
Rutherford backscattering spectroscopy
Ion bombardment
radiation damage
Ion implantation
1984
55 Citations (Scopus)

Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature

Asano, T. & Ishiwara, H., Dec 1 1984, In : Journal of Applied Physics. 55, 10, p. 3566-3570 5 p.

Research output: Contribution to journalArticle

room temperature
surface reactions
thick films
vacuum
ions
14 Citations (Scopus)

Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates

Ishiwara, H., Tsutsui, K., Asano, T. & Furukawa, S., Oct 1984, In : Japanese Journal of Applied Physics. 23, 10, p. L803-L805

Research output: Contribution to journalArticle

Substrates
Epitaxial films
Backscattering
Crystal orientation
Lattice constants

Ion channeling studies of preferentially (111) oriented BaF2 films on amorphous SiO2 substrates

Ishiwara, H., Kaifu, N. & Asano, T., Dec 1 1984, In : Applied Physics Letters. 45, 11, p. 1184-1186 3 p.

Research output: Contribution to journalArticle

ions
transmission electron microscopy
vacuum deposition
crystallites
x ray diffraction
1985
6 Citations (Scopus)

Control of crystal orientations in lattice-mismatched srf2and (Ca, sr)f2films on si substrates by intermediate caf2films

Ishiwara, H., Kanemaru, S., Asano, T. & Furukawa, S., Jan 1985, In : Japanese Journal of Applied Physics. 24, 1, p. 56-58 3 p.

Research output: Contribution to journalArticle

Crystallites
Crystal lattices
Crystal orientation
crystallites
Epitaxial films
28 Citations (Scopus)

Epitaxial relations in CaxSr1-xF2 films grown on GaAs {111} and Ge(111) substrates

Tsutsui, K., Ishiwara, H., Asano, T. & Furukawa, S., Dec 1 1985, In : Applied Physics Letters. 46, 12, p. 1131-1133 3 p.

Research output: Contribution to journalArticle

fluorides
transmission electron microscopy
ions
1986
30 Citations (Scopus)

Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs

Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K. & Furukawa, S., Feb 1986, In : Japanese Journal of Applied Physics. 25, 2 A, p. L139-L141

Research output: Contribution to journalArticle

Epitaxial growth
insulators
Substrates
Epitaxial layers
Growth temperature
9 Citations (Scopus)

Optimization of the growth conditions of heteroepitaxial GaAs films on caf2/si structures

Lee, H. C., Asano, T., Ishiwara, H. & Furukawa, S., Jan 1 1986, In : Japanese Journal of Applied Physics. 25, 7, p. L595-L597

Research output: Contribution to journalArticle

optimization
Substrates
Crystalline materials
Surface morphology
crystallinity
1987
4 Citations (Scopus)

Formation of ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films

Fukada, T., Asano, T., Frukawa, S. & Ishiwara, H., Jan 1987, In : Japanese Journal of Applied Physics. 26, 1 R, p. 117-121 5 p.

Research output: Contribution to journalArticle

Ohmic contacts
Epitaxial growth
epitaxy
solid phases
electric contacts
2 Citations (Scopus)

Growth and characterization of compositionally graded (ca, sr)f2 layers on si(111) substrates

Kanemaru, S., Ishiwara, H., Asano, T. & Furukawa, S., Jun 1987, In : Japanese Journal of Applied Physics. 26, 6R, p. 848-851 4 p.

Research output: Contribution to journalArticle

fluorides
Crucibles
Rutherford backscattering spectroscopy
Growth temperature
Substrates
11 Citations (Scopus)

MESFET’s on a GaAs-on-Insulator Structure

Tsutsui, K., Nakazawa, T., Asano, T., Ishiwara, H. & Furukawa, S., Jun 1987, In : IEEE Electron Device Letters. EDL-8, 6, p. 277-279 3 p.

Research output: Contribution to journalArticle

Wet etching
Field effect transistors
Molecular beam epitaxy
Crystalline materials
Fluorides
1988
4 Citations (Scopus)

Characterization of ultrathin CaF2films heteroepitaxially grown on Si(111) surfaces

Ando, K., Saiki, K., Sato, Y., Koma, A., Asano, T., Ishiwara, H. & Furukawa, S., Feb 1988, In : Japanese Journal of Applied Physics. 27, 2A, p. L170-L172

Research output: Contribution to journalArticle

phytotrons
Electron energy loss spectroscopy
Auger electron spectroscopy
vacuum chambers
Epitaxial growth
45 Citations (Scopus)

Electron-beam exposure(ebe) and epitaxy of gaas films on caf2/si structures

Lee, H. C., Asano, T., Ishiwara, H. & Furukawa, S., Sep 1988, In : Japanese Journal of Applied Physics. 27, 9 R, p. 1616-1625 10 p.

Research output: Contribution to journalArticle

Epitaxial growth
epitaxy
Electron beams
electron beams
temperature dependence

Electron-beam exposure heteroepitaxial growth of GaAs/CaF2/Si structures

Furukawa, S., Ishiwara, H., Asano, T. & Lee, H. C., Aug 15 1988, In : Proceedings of SPIE - The International Society for Optical Engineering. 944, p. 139-145 7 p.

Research output: Contribution to journalArticle

Epitaxy
Gallium Arsenide
Electron Beam
Epitaxial growth
epitaxy
11 Citations (Scopus)

Improvement of the interface properties of fluoride/gaas(100) structures by postgrowth annealing

Kim, K. H., Ishiwara, H., Asano, T. & Furukawa, S., Nov 1988, In : Japanese Journal of Applied Physics. 27, 11 A, p. L2180-L2182

Research output: Contribution to journalArticle

fluorides
Annealing
annealing
Capacitance measurement
Interface states
1989
7 Citations (Scopus)

Growth of single domain GaAs/fluoride/Si structures

Tsutsui, K., Asano, T., Ishiwara, H. & Furukawa, S., Feb 2 1989, In : Journal of Crystal Growth. 95, 1-4, p. 398-402 5 p.

Research output: Contribution to journalArticle

Rapid thermal annealing
Fluorides
fluorides
flat surfaces
disorders
2 Citations (Scopus)

Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Asano, T., Ishiwara, H. & Furukawa, S., Oct 1989, In : Japanese Journal of Applied Physics. 28, 10 R, p. 1784-1788 5 p.

Research output: Contribution to journalArticle

Rapid thermal annealing
Epitaxial growth
annealing
Crystalline materials
Transmission electron microscopy
5 Citations (Scopus)

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Asano, T., Ishiwara, H. & Furukawa, S., Mar 2 1989, In : Nuclear Inst. and Methods in Physics Research, B. 39, 1-4, p. 739-741 3 p.

Research output: Contribution to journalArticle

Ion bombardment
ion irradiation
fluorides
dissolving
Dissolution
1990
325 Citations (Scopus)

Arrayed-Waveguide Grating for Wavelength Division Multi/Demultiplexer with Nanometre Resolution

Takahashi, H., Suzuki, S., Kato, K. & Nishi, I., Jan 1990, In : Electronics Letters. 26, 2, p. 87-88 2 p.

Research output: Contribution to journalArticle

Arrayed waveguide gratings
Diffraction gratings
Waveguides
Wavelength
Wavelength division multiplexing
1 Citation (Scopus)

high microwave performance ion-implanted gaas mesfets on inp substrates

Wada, M. & Kato, K., Oct 1990, In : Electronics Letters. 26, 3, p. 197-199 3 p.

Research output: Contribution to journalArticle

Microwaves
Ions
Substrates
Integrated optoelectronics
Metallorganic vapor phase epitaxy
13 Citations (Scopus)

Properties and device applications of hydrogenated amorphous silicon carbide films

Rahman, M. M., Yang, C. Y., Sugiarto, D., Byrne, A. S., Ju, M., Tran, K., Lui, K. H., Asano, T. & Stickle, W. F., Dec 1 1990, In : Journal of Applied Physics. 67, 11, p. 7065-7070 6 p.

Research output: Contribution to journalArticle

silicon carbides
amorphous silicon
diodes
heterojunctions
electric fields
1991
2 Citations (Scopus)

Optogalvanic wavelength calibrator for an automatic tunable laser system

Oki, Y., Izuha, T., Maeda, M., Honda, C., Hasegawa, Y., Futami, H., Izumi, J. & Matsuda, K., Oct 1991, In : Japanese Journal of Applied Physics. 30, 10A, p. L1744-L1746

Research output: Contribution to journalArticle

Laser tuning
tunable lasers
Wavelength
wavelengths
Lasers
6 Citations (Scopus)

Turbidity Spectra of Tungstic Acid in Gelation Process

Hara, K., Kanaya, H., Okabe, H. & Matsushige, K., Oct 1991, In : journal of the physical society of japan. 60, 10, p. 3568-3572 5 p.

Research output: Contribution to journalArticle

turbidity
gelation
acids
luminaires
slopes
1992
19 Citations (Scopus)

Density variation in heat- and pressure-treated egg white during gel-to-glass-like transition

Kanaya, H., Ishida, K., Hara, K., Okabe, H., Taki, S., Matsushige, K. & Takushi, E., Nov 1992, In : Japanese Journal of Applied Physics. 31, 11 R, p. 3754-3758 5 p.

Research output: Contribution to journalArticle

eggs
Gels
gels
Glass
heat
19 Citations (Scopus)

Effects of Light Exposure during Anodization on Photoluminescence of Porous Si

Asano, T., Tonouchi, M., Miyasato, T., Higa, K. & Aoki, S., Apr 1992, In : Japanese Journal of Applied Physics. 31, 4, p. L373-L375

Research output: Contribution to journalArticle

Luminescence
Photoluminescence
luminescence
photoluminescence
Raman spectroscopy
3 Citations (Scopus)

Observation of Transmitted Light Spectra during Gelation Process of Actomyosin

Kanaya, H., Hara, K., Okabe, H., Matsushige, K., Nishimuta, S., Muguruma, M. & Fukazawa, T., Mar 1992, In : journal of the physical society of japan. 61, 3, p. 1113-1118 6 p.

Research output: Contribution to journalArticle

gelation
turbidity
logarithms
muscles
time dependence
1993
7 Citations (Scopus)

Control of si solid phase nucleation by surface steps for high-performance thin-film transistors

Asano, T. & Makihira, K., Jan 1993, In : Japanese Journal of Applied Physics. 32, 1 S, p. 482-485 4 p.

Research output: Contribution to journalArticle

Thin film transistors
solid phases
Nucleation
transistors
Wet etching
3 Citations (Scopus)

Optical Measurements during Gelation Process of Muscle Protein under High Pressure

Kanaya, H., Hara, K., Okabe, H., Taki, S., Matsushige, K., Nishimuta, S. & Muguruma, M., Jan 1 1993, In : journal of the physical society of japan. 62, 1, p. 362-367 6 p.

Research output: Contribution to journalArticle

gelation
muscles
optical measurement
proteins
turbidity
4 Citations (Scopus)
eggs
x ray scattering
Time measurement
Gels
time measurement
7 Citations (Scopus)

Solvent-substitution effects on weight and volume changes during the desiccation process of egg-white gel

Kanaya, H., Hara, K., Takushi, E. & Matsushige, K., Jun 1993, In : Japanese Journal of Applied Physics. 32, 6 R, p. 2905-2910 6 p.

Research output: Contribution to journalArticle

eggs
drying
Substitution reactions
Gels
gels
22 Citations (Scopus)

Variations of mechanical properties in egg white during gel-to-glasslike transition

Koshoubu, N., Kanaya, H., Hara, K., Taki, S., Takushi, E. & Matsushige, K., Jan 1 1993, In : Japanese Journal of Applied Physics. 32, 9 R, p. 4038-4041 4 p.

Research output: Contribution to journalArticle

eggs
stiffness
Gels
Stiffness
gels
1994
165 Citations (Scopus)

110-GHz, 50%-efficiency mushroom- mesa waveguide p-i-n photodiode for a 1.55-μm wavelength

Kato, K., Kozen, S., Muramoto, Y. & Itaya, Y., Jun 1994, In : IEEE Photonics Technology Letters. 6, 6, p. 719-721 3 p.

Research output: Contribution to journalArticle

mesas
Photodiodes
photodiodes
Waveguides
waveguides
1 Citation (Scopus)

15Gbit/s optical receiver using waveguide pin photodiode

Miyamoto, Y., Hagimoto, K. & Kato, K., Jan 1 1994, In : Electronics Letters. 30, 19, p. 1622-1623 2 p.

Research output: Contribution to journalArticle

Optical receivers
Photodiodes
Waveguides
Frequency response
47 Citations (Scopus)

Electro-optic characterisation of ultrafast photodetectors using adiabatically compressed soliton pulses

Nagatsuma, T., Yaita, M., Shinagawa, M., Kato, K., Kozen, A., Iwatsuki, K. & Suzuki, K., May 12 1994, In : Electronics Letters. 30, 10, p. 814-816 3 p.

Research output: Contribution to journalArticle

Electrooptical effects
Photodetectors
Photodiodes
Solitons
Waveguides
14 Citations (Scopus)

Patterning of CVD diamond films by seeding and their field emission properties

Katsumata, S., Oobuchi, Y. & Asano, T., Nov 1994, In : Diamond and Related Materials. 3, 11-12, p. 1296-1300 5 p.

Research output: Contribution to journalArticle

Diamond
Diamond films
Field emission
Chemical vapor deposition
Diamonds
20 Citations (Scopus)

Transformation of egg-white glass into partially crystallized glass induced by heat treatment and gamma-ray irradiation

Kanaya, H., Nishida, T., Ohara, M., Hara, K., Matsushige, K., Takushi, E. & Matsumoto, Y., Jan 1 1994, In : Japanese Journal of Applied Physics. 33, 1R, 1 p.

Research output: Contribution to journalArticle

eggs
Gamma rays
heat treatment
Heat treatment
Irradiation
1995
35 Citations (Scopus)

0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C

Kimura, S., Imai, Y., Umeda, Y. & Enoki, T., Aug 17 1995, In : Electronics Letters. 31, 17, p. 1430-1431 2 p.

Research output: Contribution to journalArticle

High electron mobility transistors
Bandwidth
Compensation and Redress
1996
12 Citations (Scopus)
Etching
emitters
etching
Fabrication
Silicon
19 Citations (Scopus)

Fabrication of single-crystal Si microstructures by anodization

Higa, K. & Asano, T., Dec 1 1996, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 SUPPL. B, p. 6648-6651 4 p.

Research output: Contribution to journalArticle

Single crystals
Fabrication
microstructure
Microstructure
fabrication
9 Citations (Scopus)

Gas species dependent charge build-up in reactive ion etching

Arita, K. & Asano, T., Dec 1 1996, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 12 SUPPL. B, p. 6534-6539 6 p.

Research output: Contribution to journalArticle

Reactive ion etching
etching
Gases
gases
Plasmas

The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron

Tsukamoto, K., Sadoh, T., Ikeda, A. & Kuroki, Y., Sep 1 1996, In : Research Reports on Information Science and Electrical Engineering of Kyushu University. 1, 1, p. 39-44 6 p.

Research output: Contribution to journalArticle

Passivation
Boron
Degradation
Hydrogen
Sheet resistance
1997

Effects of rf bias and substrate temperature on Si substrate cleaning using inductively coupled hydrogen plasma

Ikeda, A., Iwasaki, S., Nagashima, H., Ohta, S., Tsukamoto, K. & Kuroki, Y., Mar 1 1997, In : Research Reports on Information Science and Electrical Engineering of Kyushu University. 2, 1, p. 138-144 7 p.

Research output: Contribution to journalArticle

Cleaning
Plasmas
Hydrogen
Substrates
Temperature
12 Citations (Scopus)

Enhanced solid-phase crystallization of amorphous Si by plasma treatment using reactive ion etching

Asano, T., Aoto, K. & Okada, Y., Mar 1 1997, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 3 SUPPL. B, p. 1415-1419 5 p.

Research output: Contribution to journalArticle

Reactive ion etching
solid phases
Crystallization
etching
crystallization
1 Citation (Scopus)

Microwave measurement of coplanar-type resonator fabricated with YBCO film

Kanaya, H., Kaneyuki, T., Senoh, H., Cho, Y. & Awai, I., Jan 1 1997, In : Applied Superconductivity. 5, 1-6, p. 193-199 7 p.

Research output: Contribution to journalArticle

Microwave measurement
Resonators
resonators
Coplanar waveguides
microwaves