Research output per year
Research output per year
Personal profile
External positions
Assistant Professor, Jilin University
Jun 29 1999 → Nov 30 2001
Fingerprint
Dive into the research topics where Dong Wang is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Network
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression
Translated title of the contribution :High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression Research output: Contribution to journal › Article › peer-review
-
Fabrication of Ge-on-Insulator by Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications
Yamamoto, K., Wang, D. & Nakashima, H., 2021, 240th ECS Meeting - Semiconductor Process Integration 12. 4 ed. IOP Publishing Ltd., p. 157-166 10 p. 157. (ECS Transactions; vol. 104, no. 4).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
-
Schottky barrier height control at metal/Ge interface by insertion of nitrogen contained amorphous layer
Yamamoto, K., Wang, D. & Nakashima, H., 2021, 239th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2021 - High Purity and High Mobility Semiconductors 16. Simoen, E., Kononchuk, O., Nakatsuka, O. & Claeys, C. (eds.). 4 ed. IOP Publishing Ltd., p. 63-71 9 p. (ECS Transactions; vol. 102, no. 4).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
-
(Invited) Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy
Nakashima, H., Wen, W-C., Yamamoto, K. & Wang, D., Sept 8 2020, In: ECS Transactions. 98, 5, p. 395-404 10 p.Research output: Contribution to journal › Article › peer-review
-
Border-trap characterization for Ge gate stacks with Thin GeOx layer using deep-level transient spectroscopy
Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., 2020, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. Liu, Q., Hartmann, J. M., Holt, J. R., Gong, X., Jain, V., Niu, G., Masini, G., Ogura, A., Miyazaki, S., Ostling, M., Bi, W., Schulze, A. & Mai, A. (eds.). 5 ed. IOP Publishing Ltd., p. 395-404 10 p. 395. (ECS Transactions; vol. 98, no. 5).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution