Physics
Insulators
100%
Metal
77%
Substrates
54%
Photoluminescence
51%
Field Effect Transistor
50%
Wafer
43%
Fabrication
42%
Temperature
40%
Defects
39%
Fractions
39%
Annealing
39%
Photons
38%
Deposition
32%
Electrical Properties
29%
Mobility
25%
Metal Nitrides
24%
Schottky Barrier Height
23%
Transients
23%
Capacitance
21%
Oxide
19%
Electron Cyclotron Resonance
19%
Condensation
19%
Capacitor
18%
Vapor
18%
Diode
17%
Minority Carriers
17%
Nitrogen
16%
Region
16%
Model
15%
Germanium
15%
Oxidation
14%
Evaluation
14%
Targets
13%
Value
13%
Conduction Band
13%
Behavior
13%
Electroluminescence
12%
Membrane
11%
Quality
11%
Sodium
11%
Atoms
10%
Utilization
10%
Increasing
10%
Passivity
10%
Carrier Mobility
9%
Performance
9%
Gases
9%
Laser
9%
Etching
9%
Media
9%
Material Science
Defect
88%
Metal-Oxide-Semiconductor Field-Effect Transistor
66%
Al2O3
56%
Devices
50%
Amorphous Material
46%
Surface
46%
Membrane
45%
Deep-Level Transient Spectroscopy
41%
Annealing
39%
Liquid Films
37%
Germanium
37%
Density
29%
Passivation
29%
Boron Nitride
28%
Gettering
27%
Surface Passivation
26%
Electrical Property
26%
Photoluminescence
25%
Characterization
24%
Hole Mobility
23%
Etching
23%
Material
22%
Temperature
20%
Strain
20%
Oxide
19%
Oxide Semiconductor
18%
Sputter Deposition
17%
Capacitor
17%
Permittivity
15%
Field Effect Transistors
15%
Metal
14%
Metallization
11%
Semiconductor Structure
11%
Irradiation
10%
Amorphous Metal
10%
Optical Device
9%
Carrier Mobility
9%
Gas
9%
Metal Oxide
9%
Nitride Compound
9%
Micro-Raman Spectroscopy
9%
Finite Element Modeling
9%
Dielectric Material
8%
Single Crystal
8%
Structural Property
7%
Dielectric Films
7%
Electroluminescence
7%
Surface Reaction
6%
Semiconductor Material
6%
Hole Concentration
6%
Engineering
Density
61%
Metal Oxide Semiconductor
61%
Membrane
45%
Gate Stack
44%
Defects
44%
Interface State
38%
Substrates
38%
Annealing
38%
Thickness
29%
Fabrication
27%
Interlayer
27%
Oxide Thickness
25%
Evaluation
25%
Transients
23%
Capacitance
23%
Energy Gap
22%
Compressive Strain
20%
Related Defect
18%
Minority Carrier
16%
Gate Dielectric
14%
Strain Relaxation
14%
Metallizations
13%
Barrier Height
13%
Temperature
12%
Passivation
12%
Metal-Insulator-Semiconductor Capacitor
12%
Convergent Beam Electron Diffraction
12%
Ge Substrate
12%
Reduction
11%
Local Strain
10%
Fermi Level
10%
Drain Junction
10%
Dry Oxidation
10%
Applications
10%
Doping Level
9%
Annealing Temperature
9%
Fields
9%
Germanium
9%
Ohmic Contacts
9%
Finite Element Modeling
9%
Lutetium
9%
Oxidation Reaction
9%
Photons
9%
Device Performance
8%
Wafer Quality
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
8%
Sio2 Film
8%
Dielectric Film
7%
Carrier Mobility
7%
Oxide Layer
7%