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Fingerprint Dive into the research topics where Hiroshi Nakashima is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 6 Similar Profiles
Electron cyclotron resonance Engineering & Materials Science
electron cyclotron resonance Physics & Astronomy
Silicon Engineering & Materials Science
Deep level transient spectroscopy Engineering & Materials Science
Plasmas Engineering & Materials Science
Annealing Engineering & Materials Science
silicon Physics & Astronomy
Sputtering Engineering & Materials Science

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Research Output 1982 2019

Border-trap characterization for Ge gate stacks using deep-level transient spectroscopy

Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., Jan 1 2019, Semiconductor Process Integration 11. Murota, J., Claeys, C., Iwai, H., Tao, M., Deleonibus, S., Mai, A., Shiojima, K. & Cao, Y. (eds.). 4 ed. Electrochemical Society Inc., p. 3-10 8 p. (ECS Transactions; vol. 92, no. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Deep level transient spectroscopy
Valence bands
Conduction bands

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBE05.

Research output: Contribution to journalArticle

Open Access
Open Access
Field effect transistors
field effect transistors
space transportation system
3 Citations (Scopus)

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., May 27 2019, In : Applied Physics Letters. 114, 21, 212107.

Research output: Contribution to journalArticle

Open Access
solid phases
thin films
hole mobility
3 Citations (Scopus)

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., Nov 28 2018, In : Journal of Applied Physics. 124, 20, 205303.

Research output: Contribution to journalArticle

metal oxide semiconductors