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Research Output 1982 2019

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Conference contribution
2017
1 Citation (Scopus)

Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer

Nakashima, H., Okamoto, H., Yamamoto, K. & Wang, D., Jan 1 2017, ECS Transactions. Shiojima, K., Mai, A., Murota, J., Chin, P., Claeys, C. L., Iwai, H., Deleonibus, S. & Tao, M. (eds.). 4 ed. Electrochemical Society Inc., p. 97-106 10 p. (ECS Transactions; vol. 80, no. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metals
Sputter deposition
Metallizing
Fermi level
Electric properties
2015

Electrical properties of group 4 metal-nitride/Ge contacts and the application to Ge optoelectronic devices

Nakashima, H., Yamamoto, K. & Wang, D., Jan 1 2015, ULSI Process Integration 9. Murota, J., Claeys, C., Deleonibus, S., Tao, M. & Iwai, H. (eds.). 10 ed. Electrochemical Society Inc., p. 55-66 12 p. (ECS Transactions; vol. 69, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nitrides
Optoelectronic devices
Electric properties
Carrier mobility
Light emission
2014

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Wang, D., Kamezawa, S., Yamamoto, K. & Nakashima, H., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 109-110 2 p. 6874642. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electroluminescence
Germanium
Energy gap
Metals
Temperature

Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

Yamamoto, K., Wang, D. & Nakashima, H., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 91-92 2 p. 6874625. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fermi level
Nitrides
Metals

Investigation of carrier lifetimes in a thin 4H-SiC epilayer

Yang, H., Gao, J. & Nakashima, H., Jan 23 2014, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Zhou, J. & Tang, T-A. (eds.). Institute of Electrical and Electronics Engineers Inc., 7021654. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carrier lifetime
Epilayers
Passivation
Photoluminescence
Computer simulation

Investigation of ZrGe Schottky source/drain on n-Ge substrates

Yang, H., Gao, J. & Nakashima, H., Jan 23 2014, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Zhou, J. & Tang, T-A. (eds.). Institute of Electrical and Electronics Engineers Inc., 7021628. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zirconium
Substrates
Sputter deposition
Electric properties
Doping (additives)
2012
3 Citations (Scopus)

Gate stack and source/drain junction formations for high-mobility Ge MOSFETs

Nakashima, H., Yamamoto, K., Yang, H. & Wang, D., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. Vol. 50. p. 205-216 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermal diffusion
Carrier mobility
Passivation
Ion implantation
Fabrication
2011

Defect evaluation by photoluminescence for uniaxially strained Si-on-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., Jul 1 2011, China Semiconductor Technology International Conference 2011, CSTIC 2011. 1 ed. p. 1117-1122 6 p. (ECS Transactions; vol. 34, no. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photoluminescence
Strain relaxation
Defects
Annealing
Electron cyclotron resonance

Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., Mar 23 2011, Technology Evolution for Silicon Nano-Electronics. p. 79-84 6 p. (Key Engineering Materials; vol. 470).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Passivation
Annealing
Defects
Personal digital assistants
Hole concentration
2010

Defect characterization and control for SiGe-on-insulator

Wang, D., Yang, H. & Nakashima, H., Dec 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 1525-1528 4 p. 5667501. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
Hole concentration
Condensation
Annealing
Oxidation

Hole-mobility enhancement in ultrathin strained Si0.5Ge 0.5-on-insulator fabricated by Ge condensation technique

Yang, H., Wang, D. & Nakashima, H., Dec 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 905-907 3 p. 5667472. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hole mobility
Condensation
2009
1 Citation (Scopus)

Optical and electrical characterizations of defects in SiGe-On-InsuIator

Nakashima, H., Wang, D. & Yang, H., Dec 1 2009, ECS Transactions - ULSI Process Integration 6. 7 ed. Vol. 25. p. 99-114 16 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Defects
MOSFET devices
Condensation
Annealing
Hole concentration
2008
1 Citation (Scopus)

Fabrication of high-k gate dielectrics using plasma oxidation and subsequent annealing of Hf/Sio2/Si structure

Nakashima, H., Sugimoto, Y., Suehiro, Y., Yamamoto, K., Kajiwara, M., Hirayama, K. & Wang, D., Dec 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 780-783 4 p. 4734660. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gate dielectrics
Oxides
Annealing
Plasmas
Fabrication

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

Wang, D., Yang, H., Morioka, J., Kitamura, T. & Nakashima, H., Dec 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 684-687 4 p. 4734646. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser excitation
ultraviolet lasers
membranes
Membranes
evaluation
2007

Photoluminescence evaluation of defects generated during temperature ramp-up process of SiGe-on-insulator virtual substrate fabrication

Wang, D., Ii, S., Ikeda, K. I., Nakashima, H. & Nakashima, H., Aug 2 2007, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 2193-2195 3 p. 4098665

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photoluminescence
Fabrication
Defects
Substrates
Annealing
2006

Development of strained Si-SiGe-on-insulator wafers for high speed ULSI

Nakashima, H., Miyao, M., Nakamae, M. & Asano, T., Jan 1 2006, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, p. 100-103 4 p. 4098032. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Condensation
Strain relaxation
Relaxation processes
Photoluminescence
Fabrication
2003

A combination of boron getterin and phosphorous gettering in Fe-contaminated n+pp+bifaicial silicon cells

Joge, T., Araki, I., Nakashima, H. & Mateukuma, K., 2003, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Kurokawa, K., Kazmerski, L. L., McNeils, B., Yamaguchi, M. & Wronski, C. (eds.). Vol. B. p. 1455-1458 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Boron
Silicon
Deep level transient spectroscopy
Temperature
1999
3 Citations (Scopus)

Silicon fine structure formation on sapphire with Focused Ion Beam

Bai, D. J., Zhang, Y. Q., Matsushita, A., Baba, A., Kenjo, A., Sadoh, T., Nakashima, H., Mori, H. & Tsurushima, T., Dec 1 1999, Proceedings of the International Conference on Ion Implantation Technology. IEEE, p. 1101-1104 4 p. (Proceedings of the International Conference on Ion Implantation Technology; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Focused ion beams
Sapphire
Silicon
Ammonium hydroxide
Crystalline materials
1991
3 Citations (Scopus)

A 1.5 MLIPS 40-bit AI processor

Machida, H., Ando, H., Ikenaga, C., Nakashima, H., Maeda, A. & Nakaya, M., Dec 1 1991, Proceedings of the Custom Integrated Circuits Conference. Publ by IEEE, (Proceedings of the Custom Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Artificial intelligence
Clocks
1990
4 Citations (Scopus)

A pipelined microprocessor for logic programming languages

Nakashima, H., Takeda, Y., Nakajima, K., Andou, H. & Furutani, K., Sep 1 1990, Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors. Publ by IEEE, p. 355-359 5 p. (Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Logic programming
Computer programming languages
Microprocessor chips
Processing
Hardware