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Research Output 1982 2019

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2019

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBE05.

Research output: Contribution to journalArticle

Open Access
Electroluminescence
Diodes
diodes
insulators
Fabrication
Open Access
Field effect transistors
field effect transistors
insulators
space transportation system
Metals
3 Citations (Scopus)

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., May 27 2019, In : Applied Physics Letters. 114, 21, 212107.

Research output: Contribution to journalArticle

Open Access
solid phases
transistors
glass
thin films
hole mobility
2018
1 Citation (Scopus)

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., Nov 28 2018, In : Journal of Applied Physics. 124, 20, 205303.

Research output: Contribution to journalArticle

borders
metal oxide semiconductors
traps
capacitors
evaluation
7 Citations (Scopus)

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c

Higashi, H., Kudo, K., Yamamoto, K., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., Jun 7 2018, In : Journal of Applied Physics. 123, 21, 215704.

Research output: Contribution to journalArticle

electrical properties
crystallization
transistors
contamination
leakage
9 Citations (Scopus)

Two-step synthesis and characterization of vertically stacked SnS-WS2 and SnS-MoS2 p-n heterojunctions

Sukma Aji, A., Izumoto, M., Suenaga, K., Yamamoto, K., Nakashima, H. & Ago, H., Jan 1 2018, In : Physical Chemistry Chemical Physics. 20, 2, p. 889-897 9 p.

Research output: Contribution to journalArticle

Heterojunctions
heterojunctions
synthesis
Chemical vapor deposition
vapor deposition
1 Citation (Scopus)
trajectory control
Sputter deposition
interlayers
Nitrogen
Metals
2017
4 Citations (Scopus)
MOSFET devices
metal oxide semiconductors
Etching
field effect transistors
etching
6 Citations (Scopus)

A crystalline germanium flexible thin-film transistor

Higashi, H., Nakano, M., Kudo, K., Fujita, Y., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., Nov 27 2017, In : Applied Physics Letters. 111, 22, 222105.

Research output: Contribution to journalArticle

germanium
transistors
thin films
polyimides
plastics
1 Citation (Scopus)

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

Maekura, T., Tanaka, K., Motoyama, C., Yoneda, R., Yamamoto, K., Nakashima, H. & Wang, D., Aug 30 2017, In : Semiconductor Science and Technology. 32, 10, 104001.

Research output: Contribution to journalArticle

Electroluminescence
electroluminescence
Diodes
Energy gap
Metals
4 Citations (Scopus)

Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kasahara, K., Higashi, H., Nakano, M., Nagatomi, Y., Yamamoto, K., Nakashima, H. & Hamaya, K., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 68-72 5 p.

Research output: Contribution to journalArticle

Germanium
Hole mobility
hole mobility
germanium
Electric properties
4 Citations (Scopus)

Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

Kanashima, T., Yamashiro, R., Zenitaka, M., Yamamoto, K., Wang, D., Tadano, J., Yamada, S., Nohira, H., Nakashima, H. & Hamaya, K., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 260-264 5 p.

Research output: Contribution to journalArticle

Lutetium
Germanium
lutetium
germanium
Electric properties
2 Citations (Scopus)
Field effect transistors
field effect transistors
conduction
Fabrication
space transportation system
3 Citations (Scopus)

Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack

Nagatomi, Y., Tateyama, T., Tanaka, S., Wen, W. C., Sakaguchi, T., Yamamoto, K., Zhao, L., Wang, D. & Nakashima, H., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 246-253 8 p.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
field effect transistors
Annealing
Atoms
2016
2 Citations (Scopus)

A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes

Fujita, Y., Yamada, M., Nagatomi, Y., Yamamoto, K., Yamada, S., Sawano, K., Kanashima, T., Nakashima, H. & Hamaya, K., Jun 2016, In : Japanese Journal of Applied Physics. 55, 6, 63001.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
Dry etching
field effect transistors
Epilayers
3 Citations (Scopus)
germanium diodes
Germanium
Light emission
Electroluminescence
electroluminescence
2 Citations (Scopus)
Light emission
Germanium
Passivation
passivity
light emission

Erosion rate measurement in ion thrusters using Cavity Ring-Down Spectroscopy technique

Yamaguchi, A., Kibe, A., Yamamoto, N., Morita, T., Nakashima, H. & Nakano, M., Jan 28 2016, In : Journal of Instrumentation. 11, 1, C01079.

Research output: Contribution to journalArticle

Erosion
Aluminum
erosion
Spectroscopy
Cavity
2015
14 Citations (Scopus)
fins
electroluminescence
germanium
room temperature
metals
13 Citations (Scopus)
metal nitrides
transition metals
electrical properties
interlayers
nitrides
25 Citations (Scopus)

Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates

Kasahara, K., Nagatomi, Y., Yamamoto, K., Higashi, H., Nakano, M., Yamada, S., Wang, D., Nakashima, H. & Hamaya, K., Oct 5 2015, In : Applied Physics Letters. 107, 14, 142102.

Research output: Contribution to journalArticle

germanium
transistors
electrical properties
glass
thin films
8 Citations (Scopus)

Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs

Nagatomi, Y., Tanaka, S., Nagaoka, Y., Yamamoto, K., Wang, D. & Nakashima, H., Jul 1 2015, In : Japanese Journal of Applied Physics. 54, 7, 070306.

Research output: Contribution to journalArticle

Drain current
Passivation
Transistors
field effect transistors
Fabrication
2014
1 Citation (Scopus)

Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

Yang, H., Gao, J. & Nakashima, H., Oct 2014, In : Materials Science in Semiconductor Processing. 26, 1, p. 614-619 6 p.

Research output: Contribution to journalArticle

Zirconium
field effect transistors
MOSFET devices
metal oxide semiconductors
Sputter deposition
3 Citations (Scopus)
Deep level transient spectroscopy
Interface states
interlayers
Energy gap
MISFET devices
24 Citations (Scopus)
interlayers
conduction bands
electrical properties
nitrogen
2013

Development of metal source/drain Ge-CMOS using TiN/Ge and HfGe/Ge contacts

Nakashima, H., Yamamoto, K. & Wang, D., Jan 1 2013, In : ECS Transactions. 58, 9, p. 167-178 12 p.

Research output: Contribution to journalArticle

Fabrication
Carrier mobility
Fermi level
Metals
Electrons
17 Citations (Scopus)
hole mobility
metal oxide semiconductors
field effect transistors
oxides
electric fields

Fabrication of metal-nitride/Si contacts with low electron barrier height

Yamamoto, K., Asakawa, K., Wang, D. & Nakashima, H., Jan 1 2013, In : ECS Transactions. 58, 9, p. 53-59 7 p.

Research output: Contribution to journalArticle

Nitrides
Fabrication
Electrons
Metals
Sputtering
2012
15 Citations (Scopus)
MIS (semiconductors)
passivity
capacitors
spectroscopy
traps
21 Citations (Scopus)

Fabrication of TiN/Ge contact with extremely low electron barrier height

Yamamoto, K., Harada, K., Yang, H., Wang, D. & Nakashima, H., Jul 1 2012, In : Japanese journal of applied physics. 51, 7 PART 1, 070208.

Research output: Contribution to journalArticle

Leakage currents
Fabrication
fabrication
Electrons
Surface states
4 Citations (Scopus)
Hole mobility
hole mobility
Condensation
condensation
insulators
11 Citations (Scopus)
Thomson scattering
Xenon
xenon
Scattering
mass flow rate
16 Citations (Scopus)

Schottky source/drain Ge metal-oxide-semiconductor field-effect transistors with directly contacted TiN/Ge and HfGe/Ge structures

Yamamoto, K., Yamanaka, T., Harada, K., Sada, T., Sakamoto, K., Kojima, S., Yang, H., Wang, D. & Nakashima, H., May 1 2012, In : Applied Physics Express. 5, 5, 051301.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
field effect transistors
Sputter deposition
MOS devices
7 Citations (Scopus)
Nitrogen plasma
Dangling bonds
Electron cyclotron resonance
nitrogen plasma
Interface states
8 Citations (Scopus)

Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors

Yamamoto, K., Yamanaka, T., Ueno, R., Hirayama, K., Yang, H., Wang, D. & Nakashima, H., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3382-3386 5 p.

Research output: Contribution to journalArticle

MOSFET devices
metal oxide semiconductors
field effect transistors
Leakage currents
Fabrication
2011

Defect evaluation by photoluminescence for uniaxially strained Si-On-insulator

Wang, D., Yamamoto, K., Gao, H., Yang, H. & Nakashima, H., Nov 22 2011, In : Journal of the Electrochemical Society. 158, 12, p. H1221-H1224

Research output: Contribution to journalArticle

Strain relaxation
Photoluminescence
insulators
photoluminescence
Defects
2 Citations (Scopus)

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., Jun 1 2011, In : Solid-State Electronics. 60, 1, p. 128-133 6 p.

Research output: Contribution to journalArticle

Passivation
passivity
insulators
Annealing
Defects
23 Citations (Scopus)

Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

Hirayama, K., Ueno, R., Iwamura, Y., Yoshino, K., Wang, D., Yang, H. & Nakashima, H., Apr 1 2011, In : Japanese Journal of Applied Physics. 50, 4 PART 2, 04DA10.

Research output: Contribution to journalArticle

Passivation
metal oxide semiconductors
passivity
capacitors
Capacitors
19 Citations (Scopus)

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Hirayama, K., Yoshino, K., Ueno, R., Iwamura, Y., Yang, H., Wang, D. & Nakashima, H., Jun 1 2011, In : Solid-State Electronics. 60, 1, p. 122-127 6 p.

Research output: Contribution to journalArticle

MOS capacitors
Passivation
Magnetron sputtering
passivity
capacitors
30 Citations (Scopus)
MOSFET devices
Passivation
metal oxide semiconductors
passivity
field effect transistors
3 Citations (Scopus)
Strain relaxation
Electron diffraction
Membranes
Finite element method
Transmission electron microscopy
42 Citations (Scopus)

Ohmic contact formation on n-type Ge by direct deposition of TiN

Iyota, M., Yamamoto, K., Wang, D., Yang, H. & Nakashima, H., May 9 2011, In : Applied Physics Letters. 98, 19, 192108.

Research output: Contribution to journalArticle

electric contacts
annealing
p-n junctions
interlayers
temperature
18 Citations (Scopus)

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Nakashima, H., Iwamura, Y., Sakamoto, K., Wang, D., Hirayama, K., Yamamoto, K. & Yang, H., Jun 20 2011, In : Applied Physics Letters. 98, 25, 252102.

Research output: Contribution to journalArticle

metal oxide semiconductors
passivity
capacitors
annealing
nitrogen atoms
2010

325 nm-laser-excited micro-photoluminescence for strained Si films

Wang, D., Yang, H., Kitamura, T. & Nakashima, H., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2470-2473 4 p.

Research output: Contribution to journalArticle

Photoluminescence
photoluminescence
Lasers
lasers
Laser excitation
10 Citations (Scopus)

Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

Yang, H., Wang, D., Nakashima, H., Hirayama, K., Kojima, S. & Ikeura, S., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2342-2345 4 p.

Research output: Contribution to journalArticle

Personal digital assistants
insulators
Annealing
Defects
annealing

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Hirayama, K., Kira, W., Yoshino, K., Yang, H., Wang, D. & Nakashima, H., Feb 26 2010, In : Thin Solid Films. 518, 9, p. 2505-2508 4 p.

Research output: Contribution to journalArticle

Gate dielectrics
interlayers
Annealing
annealing
Electron cyclotron resonance
2 Citations (Scopus)

Influence of freely diffusing excitons on the photoluminescence spectrum of Si thick films with depth distribution of strain

Wang, D., Yang, H., Kitamura, T. & Nakashima, H., Feb 24 2010, In : Journal of Applied Physics. 107, 3, 033511.

Research output: Contribution to journalArticle

thick films
excitons
photoluminescence
penetration
lasers
Electron diffraction
finite element method
electron diffraction
membranes
Membranes
1 Citation (Scopus)

Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Gao, H., Ikeda, K. I., Hata, S., Nakashima, H., Wang, D. & Nakashima, H., Sep 1 2010, In : Materials Science and Engineering A. 527, 24-25, p. 6633-6637 5 p.

Research output: Contribution to journalArticle

strain distribution
membranes
Membranes
microstructure
Microstructure
3 Citations (Scopus)

Passivation of electrically active defects in Ge-Rich SiGe-on-insulator by Al2O3 deposition and subsequent post-deposition annealing

Yang, H., Iyota, M., Ikeura, S., Wang, D. & Nakashima, H., Jul 1 2010, In : Applied Physics Express. 3, 7, 071302.

Research output: Contribution to journalArticle

Passivation
passivity
insulators
Annealing
Defects