Research Output per year
Fingerprint Dive into the research topics where Keisuke Yamamoto is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 2 Similar Profiles
metal oxide semiconductors
Physics & Astronomy
Metals
Engineering & Materials Science
field effect transistors
Physics & Astronomy
Fabrication
Engineering & Materials Science
annealing
Physics & Astronomy
MOSFET devices
Engineering & Materials Science
Annealing
Engineering & Materials Science
electrical properties
Physics & Astronomy
Network
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Research Output 2006 2019
Border-trap characterization for Ge gate stacks using deep-level transient spectroscopy
Nakashima, H., Wen, W. C., Yamamoto, K. & Wang, D., Jan 1 2019, Semiconductor Process Integration 11. Murota, J., Claeys, C., Iwai, H., Tao, M., Deleonibus, S., Mai, A., Shiojima, K. & Cao, Y. (eds.). 4 ed. Electrochemical Society Inc., p. 3-10 8 p. (ECS Transactions; vol. 92, no. 4).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Deep level transient spectroscopy
Capacitors
Valence bands
Conduction bands
Metals
Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate
Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBE05.Research output: Contribution to journal › Article
Open Access
Electroluminescence
Diodes
diodes
insulators
Fabrication
Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation
Yamamoto, K., Nakae, K., Wang, D., Nakashima, H., Xue, Z., Zhang, M. & Di, Z., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBA14.Research output: Contribution to journal › Article
Open Access
Field effect transistors
field effect transistors
insulators
space transportation system
Metals
3
Citations
(Scopus)
Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., May 27 2019, In : Applied Physics Letters. 114, 21, 212107.Research output: Contribution to journal › Article
Open Access
solid phases
transistors
glass
thin films
hole mobility
3
Citations
(Scopus)
Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy
Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., Nov 28 2018, In : Journal of Applied Physics. 124, 20, 205303.Research output: Contribution to journal › Article
borders
metal oxide semiconductors
traps
capacitors
evaluation