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Keisuke Yamamoto

Assistant Professor

Former affiliation
  • 377 Citations
  • 13 h-Index
20062019
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  • 3 Similar Profiles
metal oxide semiconductors Physics & Astronomy
field effect transistors Physics & Astronomy
Metals Engineering & Materials Science
Fabrication Engineering & Materials Science
annealing Physics & Astronomy
MOSFET devices Engineering & Materials Science
Annealing Engineering & Materials Science
electrical properties Physics & Astronomy

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Research Output 2006 2019

  • 377 Citations
  • 13 h-Index
  • 39 Article
  • 7 Conference contribution
  • 1 Conference article

Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBE05.

Research output: Contribution to journal › Article

Open Access
Electroluminescence
Diodes
diodes
insulators
Fabrication

Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation

Yamamoto, K., Nakae, K., Wang, D., Nakashima, H., Xue, Z., Zhang, M. & Di, Z., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBA14.

Research output: Contribution to journal › Article

Open Access
Field effect transistors
field effect transistors
insulators
space transportation system
Metals

Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., May 27 2019, In : Applied Physics Letters. 114, 21, 212107.

Research output: Contribution to journal › Article

Open Access
solid phases
transistors
glass
thin films
hole mobility

Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy

Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., Nov 28 2018, In : Journal of Applied Physics. 124, 20, 205303.

Research output: Contribution to journal › Article

borders
metal oxide semiconductors
traps
capacitors
evaluation
6 Citations (Scopus)

Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c

Higashi, H., Kudo, K., Yamamoto, K., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., Jun 7 2018, In : Journal of Applied Physics. 123, 21, 215704.

Research output: Contribution to journal › Article

electrical properties
crystallization
transistors
contamination
leakage