Research Output per year
Fingerprint Dive into the research topics where Keisuke Yamamoto is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 2 Similar Profiles
metal oxide semiconductors
Physics & Astronomy
field effect transistors
Physics & Astronomy
Metals
Engineering & Materials Science
Fabrication
Engineering & Materials Science
annealing
Physics & Astronomy
MOSFET devices
Engineering & Materials Science
Annealing
Engineering & Materials Science
electrical properties
Physics & Astronomy
Network
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Research Output 2006 2019
Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate
Maekrua, T., Goto, T., Nakae, K., Yamamoto, K., Nakashima, H. & Wang, D., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBE05.Research output: Contribution to journal › Article
Open Access
Electroluminescence
Diodes
diodes
insulators
Fabrication
Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation
Yamamoto, K., Nakae, K., Wang, D., Nakashima, H., Xue, Z., Zhang, M. & Di, Z., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, SB, SBBA14.Research output: Contribution to journal › Article
Open Access
Field effect transistors
field effect transistors
insulators
space transportation system
Metals
1
Citation
(Scopus)
Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Moto, K., Yamamoto, K., Imajo, T., Suemasu, T., Nakashima, H. & Toko, K., May 27 2019, In : Applied Physics Letters. 114, 21, 212107.Research output: Contribution to journal › Article
Open Access
solid phases
transistors
glass
thin films
hole mobility
Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy
Wen, W. C., Yamamoto, K., Wang, D. & Nakashima, H., Nov 28 2018, In : Journal of Applied Physics. 124, 20, 205303.Research output: Contribution to journal › Article
borders
metal oxide semiconductors
traps
capacitors
evaluation
7
Citations
(Scopus)
Electrical properties of pseudo-single-crystalline Ge films grown by Au-induced layer exchange crystallization at 250 °c
Higashi, H., Kudo, K., Yamamoto, K., Yamada, S., Kanashima, T., Tsunoda, I., Nakashima, H. & Hamaya, K., Jun 7 2018, In : Journal of Applied Physics. 123, 21, 215704.Research output: Contribution to journal › Article
electrical properties
crystallization
transistors
contamination
leakage