If you made any changes in Pure these will be visible here soon.

Fingerprint Dive into the research topics where Koichi Kakimoto is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 10 Similar Profiles
Silicon Chemical Compounds
silicon Physics & Astronomy
Crystal growth Engineering & Materials Science
Crystallization Chemical Compounds
Crucibles Engineering & Materials Science
crystal growth Physics & Astronomy
Crystals Engineering & Materials Science
crucibles Physics & Astronomy

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1980 2019

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Silicon
Carbon Monoxide
in situ measurement
furnaces
contamination

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Yokoyama, R., Nakamura, T., Sugimura, W., Ono, T., Fujiwara, T. & Kakimoto, K., Aug 1 2019, In : Journal of Crystal Growth. 519, p. 77-83 7 p.

Research output: Contribution to journalArticle

Open Access
Crystal growth from melt
Silicon
Magnetic fields
Computer simulation
silicon

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., May 1 2018, In : Crystal Research and Technology. 53, 5, 1700246.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 1 2018, In : Journal of Crystal Growth. 483, p. 269-274 6 p.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth
1 Citation (Scopus)

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Ishikawa, Y., Tajima, M., Kiuchi, H., Ogura, A., Miyamura, Y., Harada, H. & Kakimoto, K., Aug 1 2018, In : Japanese Journal of Applied Physics. 57, 8, 08RB06.

Research output: Contribution to journalArticle

Electron irradiation
electron irradiation
Photoluminescence
photoluminescence
Crystals