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Fingerprint Dive into the research topics where Koichi Kakimoto is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 11 Similar Profiles
Silicon Chemical Compounds
silicon Physics & Astronomy
Crystal growth Engineering & Materials Science
Crystallization Chemical Compounds
crystal growth Physics & Astronomy
Crucibles Engineering & Materials Science
Crystals Engineering & Materials Science
crucibles Physics & Astronomy

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Research Output 1980 2020

3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

Han, X. F., Liu, X., Nakano, S., Harada, H., Miyamura, Y. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125403.

Research output: Contribution to journalArticle

Silicon
Crystallization
Crystal growth
floating
crystal growth

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

pulling
Silicon
Crystallization
Crystal growth
crystal growth

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

pulling
Silicon
Crystallization
Crystal growth
crystal growth

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Silicon
Carbon Monoxide
in situ measurement
furnaces
contamination
2 Citations (Scopus)

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Yokoyama, R., Nakamura, T., Sugimura, W., Ono, T., Fujiwara, T. & Kakimoto, K., Aug 1 2019, In : Journal of Crystal Growth. 519, p. 77-83 7 p.

Research output: Contribution to journalArticle

Open Access
Crystal growth from melt
Silicon
Magnetic fields
Computer simulation
silicon