If you made any changes in Pure these will be visible here soon.

Research Output 1989 2019

Filter
Conference contribution
2019

Optimization of growth procedure for silicon oxinitride (Si4O5N3) single-layer on SiC(0001)

Kabiruzzaman, M., Nakagawa, T. & Mizuno, S., Feb 12 2019, 2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018. Institute of Electrical and Electronics Engineers Inc., p. 218-221 4 p. 8641044. (2018 Joint 7th International Conference on Informatics, Electronics and Vision and 2nd International Conference on Imaging, Vision and Pattern Recognition, ICIEV-IVPR 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low energy electron diffraction
Diffraction patterns
Silicon
Electron
Diffraction
2018

Coadsorption study of Pb and Sb on Cu(001) by low energy electron diffraction

Kabiruzzaman, M., Ahmed, R., Nakagawa, T. & Mizuno, S., Apr 16 2018, 2017 6th International Conference on Informatics, Electronics and Vision and 2017 7th International Symposium in Computational Medical and Health Technology, ICIEV-ISCMHT 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-5 5 p. 8338577. (2017 6th International Conference on Informatics, Electronics and Vision and 2017 7th International Symposium in Computational Medical and Health Technology, ICIEV-ISCMHT 2017; vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low energy electron diffraction
Electrons
Computer Simulation
Diffraction patterns
Temperature
2015

Epitaxial CVD growth of high-quality graphene and recent development of 2D heterostructures

Ago, H., Ogawa, Y., Kawahara, K., Ito, Y., Hu, B., Orofeo, C. M., Fernandez, P. S., Endo, H., Hibino, H., Mizuno, S., Tsukagoshi, K. & Tsuji, M., Feb 16 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-February. p. 27.2.1-27.2.4 7409779

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Graphite
Graphene
Heterojunctions
Chemical vapor deposition
graphene

Surface structure study and structure determination of (√3 × √3)R 30° phase of Si-adsorption on Ni(111) by LEED

Rahman, M. S., Kibria, M. T., Nakagawa, T. & Mizuno, S., Nov 20 2015, 2015 4th International Conference on Informatics, Electronics and Vision, ICIEV 2015. Institute of Electrical and Electronics Engineers Inc., 7334025. (2015 4th International Conference on Informatics, Electronics and Vision, ICIEV 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low energy electron diffraction
Surface structure
Adsorption
Nickel
Semiconductor materials
2014
1 Citation (Scopus)

Study the surface structure evolution of Si-adsorption on Ag(111) by LEED-AES

Rahman, M. S., Nakagawa, T. & Mizuno, S., Jan 1 2014, 2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014. IEEE Computer Society, 6850865. (2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Surface structure
Adsorption
Silicon
Honeycomb structures
Graphene
2007

Extremely low bias electron emitter from electric field induced reconstructed tungsten tip

Rahman, F. H. M. F., Khanom, F., Mizuno, S. & Tochihara, H., Dec 1 2007, Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006. p. 48-51 4 p. 4178405. (Proceedings of 4th International Conference on Electrical and Computer Engineering, ICECE 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electron emission
Tungsten
Electric fields
Electrons
Bias voltage
2006

Preparation of tungsten tip that emits electron at extremely low bias voltage

Rahman, F., Mizuno, S. & Tochihara, H., Dec 1 2006, IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium. p. 261-262 2 p. 4134560. (IVNC and IFES 2006 - Technical Digest - l9th International Vacuum Nanoelectronics Conference and 50th International Field Emission Symposium).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bias voltage
Tungsten
Electrons
1998

On the atomic arrangement on ZrO/W(100) cathode surface - models for LEED I-V analysis

Kawata, S., Oka, M., Takami, T., Nakane, H., Adachi, H. & Mizuno, S., 1998, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, p. 11-12 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

cathodes
oxygen atoms
dipoles
configurations
atoms