If you made any changes in Pure these will be visible here soon.

Fingerprint Dive into the research topics where Shinichi Nishizawa is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 1 Similar Profiles
Sublimation Engineering & Materials Science
Silicon carbide Engineering & Materials Science
Crystal growth Engineering & Materials Science
Crystals Engineering & Materials Science
sublimation Physics & Astronomy
silicon carbides Physics & Astronomy
Crystallization Chemical Compounds
crystal growth Physics & Astronomy

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1988 2019

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Demonstrations
Electric potential
electric potential
scaling

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

Aluminum
Silicon carbide
silicon carbides
Nitrogen
aluminum

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access
Carrier lifetime
Insulated gate bipolar transistors (IGBT)
carrier lifetime
bipolar transistors
minority carriers

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Silicon
Carbon Monoxide
in situ measurement
furnaces
contamination

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsukuda, M., Ogura, A., Tsutsui, K., Iwai, H., Nishizawa, S., Omura, I., Ohashi, H. & 1 others, Hiramoto, T., Mar 1 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., p. 98-101 4 p. 8730922. (IEEE International Conference on Microelectronic Test Structures; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carrier lifetime
Bipolar transistors
Insulated gate bipolar transistors (IGBT)
Fabrication
Electric potential