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Fingerprint Dive into the research topics where Shinichi Nishizawa is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Sublimation Engineering & Materials Science
Silicon carbide Engineering & Materials Science
Crystal growth Engineering & Materials Science
Crystals Engineering & Materials Science
Crystallization Chemical Compounds
sublimation Physics & Astronomy
silicon carbides Physics & Astronomy
crystal growth Physics & Astronomy

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Research Output 1988 2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

pulling
Silicon
Crystallization
Crystal growth
crystal growth

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

pulling
Silicon
Crystallization
Crystal growth
crystal growth

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Degradation
Electric potential

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access
Threshold voltage
threshold voltage
field effect transistors
Polarization
Networks (circuits)
circuit breakers
Electric circuit breakers
Junction gate field effect transistors
direct current
degradation