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Fingerprint Dive into the research topics where Shinichi Nishizawa is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Sublimation Engineering & Materials Science
Silicon carbide Engineering & Materials Science
Crystal growth Engineering & Materials Science
Crystals Engineering & Materials Science
sublimation Physics & Astronomy
silicon carbides Physics & Astronomy
Crystallization Chemical Compounds
crystal growth Physics & Astronomy

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Research Output 1988 2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Threshold voltage
Integrated circuits
Degradation
Electric potential

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access
Threshold voltage
threshold voltage
field effect transistors
Polarization
Networks (circuits)

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Demonstrations
Electric potential
electric potential
scaling

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

Aluminum
Silicon carbide
silicon carbides
Nitrogen
aluminum

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access
Carrier lifetime
Insulated gate bipolar transistors (IGBT)
carrier lifetime
bipolar transistors
minority carriers