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Fingerprint Fingerprint is based on mining the text of the person's scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

Sublimation Engineering & Materials Science
Silicon carbide Engineering & Materials Science
Crystal growth Engineering & Materials Science
Crystals Engineering & Materials Science
sublimation Physics & Astronomy
silicon carbides Physics & Astronomy
Crystallization Chemical Compounds
crystal growth Physics & Astronomy

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Research Output 1988 2019

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 othersOmura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Demonstrations
Electric potential
electric potential
scaling

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

Aluminum
Silicon carbide
silicon carbides
Nitrogen
aluminum

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Silicon
Carbon Monoxide
in situ measurement
furnaces
contamination

3D scaling for insulated gate bipolar transistors (IGBTs) with low V ce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 othersOhashi, H. & Iwai, H., Jan 8 2018, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Tang, T-A. & Hong, Z. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Insulated gate bipolar transistors (IGBT)
Electric potential
2 Citations (Scopus)

DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors

Hasegawa, K., Tsuzaki, K. & Nishizawa, S., Apr 1 2018, In : Microelectronics Reliability. 83, p. 115-118 4 p.

Research output: Contribution to journalArticle

Electrolytic capacitors
Bias voltage
Aluminum
capacitors
Capacitors