• 989 Citations
  • 17 h-Index
1988 …2020

Research output per year

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Research Output

2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A condition-monitoring method of DC-link capacitors used in a high-power three-phase PWM inverter with an evaluation circuit

Hasegawa, K., Nishizawa, S. I. & Omura, I., Jan 1 2019, In : IEEJ Journal of Industry Applications. 8, 3, p. 480-487 8 p.

Research output: Contribution to journalArticle

Open Access
1 Citation (Scopus)

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S. I., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Dec 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993596. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access

Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Nakamura, K., Masuoka, F., Nishii, A., Nishizawa, S. I. & Furukawa, A., Nov 2019, In : IEEE Transactions on Electron Devices. 66, 11, p. 4842-4849 8 p., 8852709.

Research output: Contribution to journalArticle

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S. I., Tsutsui, K., Hiramoto, T., Ohashi, H. & 1 others, Iwai, H., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 311-314 4 p. 8757640. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsukuda, M., Ogura, A., Tsutsui, K., Iwai, H., Nishizawa, S., Omura, I., Ohashi, H. & 1 others, Hiramoto, T., Mar 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., p. 98-101 4 p. 8730922. (IEEE International Conference on Microelectronic Test Structures; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors

Hasegawa, K., Tsuzaki, K. & Nishizawa, S., Apr 1 2018, In : Microelectronics Reliability. 83, p. 115-118 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., May 1 2018, In : Journal of Crystal Growth. 489, p. 1-4 4 p.

Research output: Contribution to journalArticle

ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier

Hasegawa, K., Nishizawa, S. & Omura, I., Sep 2018, In : Microelectronics Reliability. 88-90, p. 433-437 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

GaN-based complementary metal-oxide- semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Nakajima, A., Kubota, S., Tsutsui, K., Kakushima, K., Wakabayashi, H., Iwai, H., Nishizawa, S. I. & Ohashi, H., Apr 10 2018, In : IET Power Electronics. 11, 4, p. 689-694 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Kakushima, K., Hoshii, T., Watanabe, M., Shizyo, N., Furukawa, K., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Numasawa, Y., Ogura, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H. & Iwai, H., Oct 22 2018, 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc., p. 105-106 2 p. 8502399. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. & Kakimoto, K., Oct 1 2018, In : Journal of Crystal Growth. 499, p. 8-12 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 56-59 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

Hoshii, T., Furukawa, K., Kakushima, K., Watanabe, M., Shigvo, N., Saraya, T., Takakura, T., Ltou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H. & Lwai, H., Oct 8 2018, 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, p. 26-29 4 p. 8486870. (European Solid-State Device Research Conference; vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jul 1 2017, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Hong, Z. & Tang, T-A. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., Jan 1 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990846. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jan 31 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 10.6.1-10.6.4 7838390. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2016

A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 10 2016, 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 3032-3037 6 p. 7468295. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 2016, In : IEEE Transactions on Industrial Electronics. 63, 5, p. 2679-2687 9 p., 7362196.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

Hasegawa, K., Kozuma, K., Tsuzaki, K., Omura, I. & Nishizawa, S., Sep 1 2016, In : Microelectronics Reliability. 64, p. 98-100 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Wafer requirement for future power devices

Nishizawa, S. I., Jan 5 2016, TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 7372890. (IEEE Region 10 Annual International Conference, Proceedings/TENCON; vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H. & Iwai, H., Oct 30 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima, A., Nishizawa, S. I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Wakabayashi, H. & Iwai, H., Jun 12 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 7123463. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

High-speed dicing of SiC wafers by femtosecond pulsed laser

Nakajima, A., Tateishi, Y., Murakami, H., Takahashi, H., Ota, M., Kosugi, R., Mitani, T., Nishizawa, S. & Ohashi, H., Jan 1 2015, Silicon Carbide and Related Materials 2014. Chaussende, D. & Ferro, G. (eds.). Trans Tech Publications Ltd, p. 524-527 4 p. (Materials Science Forum; vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

Nakajima, A., Saito, W., Nishizawa, S. & Ohashi, H., 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149120

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

The silicon on diamond structure by low-temperature bonding technique

Duangchan, S., Uchikawa, Y., Koishikawa, Y., Akiyoshi, B., Nakagawa, K., Matsumoto, S., Hasegawa, M. & Nishizawa, S., Jul 15 2015, 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., p. 187-192 6 p. 7159590. (Proceedings - Electronic Components and Technology Conference; vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2014

2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

Matsuoka, Y., Wada, K., Nakahara, M., Takao, K., Sung, K., Ohashi, H. & Nishizawa, S., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 744-749 6 p. 6869671

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Erratum: Impact of semiconductor on diamond structure for power supply on chip applications (Japanese Journal of Applied Physics (2014) 53 (04EP16))

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Jun 2014, In : Japanese Journal of Applied Physics. 53, 6, 069202.

Research output: Contribution to journalComment/debate

Experimental investigation of normally-on type bidirectional switch for indirect Matrix Converters

Sung, K., Iijima, R., Nishizawa, S., Norigoe, I. & Ohashi, H., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 117-122 6 p. 6869568. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Nakajima, A., Liu, P., Ogura, M., Makino, T., Kakushima, K., Nishizawa, S., Ohashi, H., Yamasaki, S. & Iwai, H., Apr 21 2014, In : Journal of Applied Physics. 115, 15, 153707.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Jan 1 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima, A., Nishizawa, S., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H. & Iwai, H., Jan 1 2014, Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 6856021. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., Jan 1 2014, In : Journal of Crystal Growth. 385, p. 95-99 5 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
2013

4.5 kV - 400 A SiC-PiN diode and Si-IEGT hybrid pair module for high switching frequency operation

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Kanai, T., Shinohe, T. & Ohashi, H., Jan 1 2013.

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., Nishizawa, S. & Ohashi, H., Dec 1 2013, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. p. 155-158 4 p. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
11 Citations (Scopus)

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Leone, S., Henry, A., Janzén, E. & Nishizawa, S., Jan 1 2013, In : Journal of Crystal Growth. 362, 1, p. 170-173 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1577-1583 7 p. 6646893. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Maximum switching frequency characterization of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair power module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1570-1576 7 p. 6646892. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Raman intensity profiles of zone-folded modes in SiC: Identification of stacking sequence of 10H-SiC

Nakashima, S., Tomita, T., Kuwahara, N., Mitani, T., Tomobe, M., Nishizawa, S. & Okumura, H., Nov 21 2013, In : Journal of Applied Physics. 114, 19, 193510.

Research output: Contribution to journalArticle

Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface

Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S. I., Yamasaki, S., Ohashi, H., Kakushima, K. & Iwai, H., Sep 1 2013, In : Applied Physics Express. 6, 9, 091002.

Research output: Contribution to journalArticle

11 Citations (Scopus)