• 989 Citations
  • 17 h-Index
1988 …2020

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2019

3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Dec 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993596. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Watanabe, M., Shigyo, N., Hoshii, T., Furukawa, K., Kakushima, K., Satoh, K., Matsudai, T., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nakajima, A., Nishizawa, S. I., Tsutsui, K., Hiramoto, T., Ohashi, H. & 1 others, Iwai, H., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 311-314 4 p. 8757640. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsukuda, M., Ogura, A., Tsutsui, K., Iwai, H., Nishizawa, S., Omura, I., Ohashi, H. & 1 others, Hiramoto, T., Mar 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019. Institute of Electrical and Electronics Engineers Inc., p. 98-101 4 p. 8730922. (IEEE International Conference on Microelectronic Test Structures; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Kakushima, K., Hoshii, T., Watanabe, M., Shizyo, N., Furukawa, K., Saraya, T., Takakura, T., Itou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Numasawa, Y., Ogura, A., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H. & Iwai, H., Oct 22 2018, 2018 IEEE Symposium on VLSI Circuits, VLSI Circuits 2018. Institute of Electrical and Electronics Engineers Inc., p. 105-106 2 p. 8502399. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately

Hoshii, T., Furukawa, K., Kakushima, K., Watanabe, M., Shigvo, N., Saraya, T., Takakura, T., Ltou, K., Fukui, M., Suzuki, S., Takeuchi, K., Muneta, I., Wakabayashi, H., Nishizawa, S., Tsutsui, K., Hiramoto, T., Ohashi, H. & Lwai, H., Oct 8 2018, 2018 48th European Solid-State Device Research Conference, ESSDERC 2018. Editions Frontieres, p. 26-29 4 p. 8486870. (European Solid-State Device Research Conference; vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2017

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Tsutsui, K., Kakushima, K., Hoshii, T., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jul 1 2017, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Hong, Z. & Tang, T-A. (eds.). IEEE Computer Society, p. 1137-1140 4 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

An evaluation circuit for DC-link capacitors used in a single- phase PWM inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., Jan 1 2017, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 7990846. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., Omura, I. & 2 others, Ohashi, H. & Iwai, H., Jan 31 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 10.6.1-10.6.4 7838390. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2016

A new evaluation circuit with a low-voltage inverter intended for capacitors used in a high-power three-phase inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 10 2016, 2016 IEEE Applied Power Electronics Conference and Exposition, APEC 2016. Institute of Electrical and Electronics Engineers Inc., p. 3032-3037 6 p. 7468295. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Wafer requirement for future power devices

Nishizawa, S. I., Jan 5 2016, TENCON 2015 - 2015 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 7372890. (IEEE Region 10 Annual International Conference, Proceedings/TENCON; vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Nakajima, A., Nishizawa, S. I., Kubota, S., Kayanuma, R., Tsutsui, K., Ohashi, H., Kakushima, K., Wakabayashi, H. & Iwai, H., Oct 30 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 7314489. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Nakajima, A., Nishizawa, S. I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Wakabayashi, H. & Iwai, H., Jun 12 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015. Institute of Electrical and Electronics Engineers Inc., p. 357-360 4 p. 7123463. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2015-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

High-speed dicing of SiC wafers by femtosecond pulsed laser

Nakajima, A., Tateishi, Y., Murakami, H., Takahashi, H., Ota, M., Kosugi, R., Mitani, T., Nishizawa, S. & Ohashi, H., Jan 1 2015, Silicon Carbide and Related Materials 2014. Chaussende, D. & Ferro, G. (eds.). Trans Tech Publications Ltd, p. 524-527 4 p. (Materials Science Forum; vol. 821-823).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

Nakajima, A., Saito, W., Nishizawa, S. & Ohashi, H., 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 7149120

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

The silicon on diamond structure by low-temperature bonding technique

Duangchan, S., Uchikawa, Y., Koishikawa, Y., Akiyoshi, B., Nakagawa, K., Matsumoto, S., Hasegawa, M. & Nishizawa, S., Jul 15 2015, 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Institute of Electrical and Electronics Engineers Inc., p. 187-192 6 p. 7159590. (Proceedings - Electronic Components and Technology Conference; vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
2014

2.5kV, 200kW bi-directional isolated DC/DC converter for medium-voltage applications

Matsuoka, Y., Wada, K., Nakahara, M., Takao, K., Sung, K., Ohashi, H. & Nishizawa, S., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 744-749 6 p. 6869671

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Experimental investigation of normally-on type bidirectional switch for indirect Matrix Converters

Sung, K., Iijima, R., Nishizawa, S., Norigoe, I. & Ohashi, H., Jan 1 2014, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, p. 117-122 6 p. 6869568. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Nakajima, A., Nishizawa, S., Ohashi, H., Yonezawa, H., Tsutsui, K., Kakushima, K., Wakabayashi, H. & Iwai, H., Jan 1 2014, Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014. Institute of Electrical and Electronics Engineers Inc., p. 241-244 4 p. 6856021. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)
2013

Characterization of two-dimensional hole gas at GaN/AlGaN heterointerface

Liu, P., Kakushima, K., Iwai, H., Nakajima, A., Makino, T., Ogura, M., Nishizawa, S. & Ohashi, H., Dec 1 2013, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. p. 155-158 4 p. 6695585. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Experimental evaluation of 10kHz switching operation of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1577-1583 7 p. 6646893. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Maximum switching frequency characterization of 4.5kV-400A SiC-PiN diode and Si-IEGT hybrid pair power module

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 31 2013, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. p. 1570-1576 7 p. 6646892. (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2012

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Takao, K., Wada, K., Sung, K., Mastuoka, Y., Tanaka, Y., Nishizawa, S., Ota, C., Kanai, T., Shinohe, T. & Ohashi, H., Dec 17 2012, 2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012. p. 1509-1514 6 p. 6342635. (2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Analysis of growth velocity of SiC growth by the physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 25-28 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bulk and surface effects on the polytype stability in SiC crystals

Mercier, F. & Nishizawa, S., May 28 2012, Silicon Carbide and Related Materials 2011, ICSCRM 2011. p. 41-44 4 p. (Materials Science Forum; vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Design and implementation of a non-destructive test circuit for SiC-MOSFETs

Wada, K., Nishizawa, S. & Ohashi, H., 2012, Conference Proceedings - 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012. Vol. 1. p. 10-15 6 p. 6258831

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Silicon carbide bulk crystal growth modeling from atomic scale to reactor scale

Nishizawa, S. I., Dec 1 2012, Gallium Nitride and Silicon Carbide Power Technologies 2. 3 ed. p. 119-126 8 p. (ECS Transactions; vol. 50, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

Design and analysis of a bus bar structure for a medium voltage inverter

Ando, M., Wada, K., Takao, K., Kanai, T., Nishizawa, S. & Ohashi, H., Oct 11 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011. 6020404. (Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Diamond power devices - Possbility of high voltage applicatios

Yamasaki, S., Matsumoto, T., Oyama, K., Kato, H., Ogura, M., Takeuchi, D., Makino, T., Nishizawa, S., Oohash, H. & Okushi, H., Dec 1 2011, 2011 1st International Conference on Electric Power Equipment - Switching Technology, ICEPE2011 - Proceedings. p. 418-420 3 p. 6123021

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effect of low frequency magnetic field on SiC solution growth

Mercier, F. & Nishizawa, S. I., Apr 28 2011, Silicon Carbide and Related Materials 2010. p. 32-35 4 p. (Materials Science Forum; vol. 679-680).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Calculation of lattice constant of 4H-SiC as a function of impurity concentration

Matsumoto, T., Nishizawa, S. & Yamasaki, S., Jan 1 2010, Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, p. 247-250 4 p. (Materials Science Forum; vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)
2009

Doping concentration optimization for ultra-low-loss 4H-SiC floating junction Schottky barrier diode (Super-SBD)

Ota, C., Nishio, J., Takao, K., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S. & Ohashi, H., Dec 1 2009, Silicon Carbide and Related Materials 2008: ECSCRM 2008. p. 655-658 4 p. (Materials Science Forum; vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Silicon carbide growth: C/Si ratio evaluation and modeling

Pons, M., Nishizawa, S. I., Wellmann, P., Blanquet, E., Chaussende, D., Dedulle, J. M. & Madar, R., Jan 1 2009, Silicon Carbide and Related Materials 2007. Fuyuki, T., Okumura, H., Fukuda, K., Nishizawa, S., Kimoto, T. & Suzuki, A. (eds.). Trans Tech Publications Ltd, p. 83-88 6 p. (Materials Science Forum; vol. 600-603).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2007

Demonstration of motor drive with SiC normally-off IEMOSFET/ SBD power converter

Harada, S., Hayashi, Y., Takao, K., Kinoshita, A., Kato, M., Okamoto, M., Kato, T., Nishizawa, S., Yatsuo, T., Fukuda, K., Ohashi, H. & Arai, K., Dec 1 2007, Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07. p. 289-292 4 p. 4294989. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)
2006

Activation treatment of ion implanted dopants using hybrid super RTA equipment

Kinoshita, A., Senzaki, J., Katou, M., Harada, S., Okamato, M., Nishizawa, S. I., Fukuda, K., Morigasa, F., Endou, T., Isii, T. & Yashima, T., Dec 1 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. p. 803-806 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Effect of radiation in solid during SiC sublimation growth

Nishizawa, S. I., Nakashima, S. I. & Kato, T., Nov 1 2006, Silicon Carbide 2006 - Materials, Processing and Devices. p. 29-34 6 p. (Materials Research Society Symposium Proceedings; vol. 911).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Fabrication of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) and their electrical properties

Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S. & Ohashi, H., 2006, Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 ed. Vol. 527-529. p. 1175-1178 4 p. (Materials Science Forum; vol. 527-529, no. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Recent progress of SiC hot-wall epitaxy and its modeling

Nishizawa, S. & Pons, M., 2006, Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Vol. 527-529. p. 127-134 8 p. (Materials Science Forum; vol. 527-529, no. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Silicon carbide growth: C/Si ratio evaluation and modeling

Pons, M., Nishizawa, S., Wellmann, P., Blanquet, E., Chaussende, D. & Dedulle, J. M., Oct 31 2006, Silicon Carbide 2006 - Materials, Processing and Devices. Vol. 911. p. 67-78 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2005

Defect characterization of 4H-SiC bulk crystals grown on micropipe filled seed crystals

Kato, T., Kojima, K., Nishizawa, S. & Arai, K., Dec 1 2005, Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. p. 315-318 4 p. (Materials Science Forum; vol. 483-485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Numerical analysis of growth condition on SiC-CVD in the horizontal hot-wall reactor

Nishizawa, S. & Pons, M., Dec 1 2005, Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials. p. 53-56 4 p. (Materials Science Forum; vol. 483-485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)