• 989 Citations
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1988 …2020

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2020

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125405.

Research output: Contribution to journalArticle

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. I. & Kakimoto, K., Feb 15 2020, In : Journal of Crystal Growth. 532, 125404.

Research output: Contribution to journalArticle

2019

A condition-monitoring method of DC-link capacitors used in a high-power three-phase PWM inverter with an evaluation circuit

Hasegawa, K., Nishizawa, S. I. & Omura, I., Jan 1 2019, In : IEEJ Journal of Industry Applications. 8, 3, p. 480-487 8 p.

Research output: Contribution to journalArticle

Open Access
1 Citation (Scopus)

Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates

Hoshii, T., Nakajima, A., Nishizawa, S. I., Ohashi, H., Kakushima, K., Wakabayashi, H. & Tsutsui, K., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 6, 061006.

Research output: Contribution to journalArticle

Open Access

Effect of nitrogen and aluminium on silicon carbide polytype stability

Nishizawa, S. & F.Mercier, Jul 15 2019, In : Journal of Crystal Growth. 518, p. 99-102 4 p.

Research output: Contribution to journalArticle

Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

Kobayashi, H., Yokogawa, R., Kinoshita, K., Numasawa, Y., Ogura, A., Nishizawa, S., Saraya, T., Ito, K., Takakura, T., Suzuki, S. I., Fukui, M., Takeuchi, K. & Hiramoto, T., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 59, SBBD07.

Research output: Contribution to journalArticle

Open Access

Freewheeling Diode Technology with Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications

Nakamura, K., Masuoka, F., Nishii, A., Nishizawa, S. I. & Furukawa, A., Nov 2019, In : IEEE Transactions on Electron Devices. 66, 11, p. 4842-4849 8 p., 8852709.

Research output: Contribution to journalArticle

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Miyamura, Y., Harada, H., Liu, X., Nakano, S., Nishizawa, S. & Kakimoto, K., Feb 1 2019, In : Journal of Crystal Growth. 507, p. 154-156 3 p.

Research output: Contribution to journalArticle

2018

DC-bias-voltage dependence of degradation of aluminum electrolytic capacitors

Hasegawa, K., Tsuzaki, K. & Nishizawa, S., Apr 1 2018, In : Microelectronics Reliability. 83, p. 115-118 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., May 1 2018, In : Journal of Crystal Growth. 489, p. 1-4 4 p.

Research output: Contribution to journalArticle

ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier

Hasegawa, K., Nishizawa, S. & Omura, I., Sep 2018, In : Microelectronics Reliability. 88-90, p. 433-437 5 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

GaN-based complementary metal-oxide- semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Nakajima, A., Kubota, S., Tsutsui, K., Kakushima, K., Wakabayashi, H., Iwai, H., Nishizawa, S. I. & Ohashi, H., Apr 10 2018, In : IET Power Electronics. 11, 4, p. 689-694 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

Liu, X., Harada, H., Miyamura, Y., Han, X. F., Nakano, S., Nishizawa, S. & Kakimoto, K., Oct 1 2018, In : Journal of Crystal Growth. 499, p. 8-12 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Miyamura, Y., Harada, H., Nakano, S., Nishizawa, S. & Kakimoto, K., Mar 15 2018, In : Journal of Crystal Growth. 486, p. 56-59 4 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2016

Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter

Hasegawa, K., Omura, I. & Nishizawa, S. I., May 2016, In : IEEE Transactions on Industrial Electronics. 63, 5, p. 2679-2687 9 p., 7362196.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Temperature rise measurement for power-loss comparison of an aluminum electrolytic capacitor between sinusoidal and square-wave current injections

Hasegawa, K., Kozuma, K., Tsuzaki, K., Omura, I. & Nishizawa, S., Sep 1 2016, In : Microelectronics Reliability. 64, p. 98-100 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory

Araki, S., Gao, B., Nishizawa, S., Nakano, S. & Kakimoto, K., May 1 2016, In : Crystal Research and Technology. 51, 5, p. 344-348 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2014

Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Nakajima, A., Liu, P., Ogura, M., Makino, T., Kakushima, K., Nishizawa, S., Ohashi, H., Yamasaki, S. & Iwai, H., Apr 21 2014, In : Journal of Applied Physics. 115, 15, 153707.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Impact of semiconductor on diamond structure for power supply on chip applications

Nakagawa, K., Kodama, T., Matsumoto, S., Yamada, T., Hasegawa, M. & Nishizawa, S., Jan 1 2014, In : Japanese Journal of Applied Physics. 53, 4 SPEC. ISSUE, 04EP16.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S. & Kakimoto, K., Jan 1 2014, In : Journal of Crystal Growth. 385, p. 95-99 5 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)
2013
11 Citations (Scopus)

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Leone, S., Henry, A., Janzén, E. & Nishizawa, S., Jan 1 2013, In : Journal of Crystal Growth. 362, 1, p. 170-173 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Raman intensity profiles of zone-folded modes in SiC: Identification of stacking sequence of 10H-SiC

Nakashima, S., Tomita, T., Kuwahara, N., Mitani, T., Tomobe, M., Nishizawa, S. & Okumura, H., Nov 21 2013, In : Journal of Applied Physics. 114, 19, 193510.

Research output: Contribution to journalArticle

Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface

Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S. I., Yamasaki, S., Ohashi, H., Kakushima, K. & Iwai, H., Sep 1 2013, In : Applied Physics Express. 6, 9, 091002.

Research output: Contribution to journalArticle

11 Citations (Scopus)
2012

Gas-phase modeling of chlorine-based chemical vapor deposition of silicon carbide

Leone, S., Kordina, O., Henry, A., Nishizawa, S. I., Danielsson, Ö. & Janzén, E., Apr 4 2012, In : Crystal Growth and Design. 12, 4, p. 1977-1984 8 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Role of surface effects on silicon carbide polytype stability

Mercier, F. & Nishizawa, S. I., Dec 1 2012, In : Journal of Crystal Growth. 360, 1, p. 189-192 4 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory

Shiramomo, T., Gao, B., Mercier, F., Nishizawa, S., Nakano, S., Kangawa, Y. & Kakimoto, K., Aug 1 2012, In : Journal of Crystal Growth. 352, 1, p. 177-180 4 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)
2011

Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts

Mercier, F. & Nishizawa, S., Mar 1 2011, In : Japanese Journal of Applied Physics. 50, 3, 035603.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics

Mercier, F. & Nishizawa, S. I., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 385-388 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S. & Nishizawa, S. I., Jun 1 2011, In : Journal of Crystal Growth. 324, 1, p. 78-81 4 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)
2010

Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

Gao, B., Chen, X. J., Nakano, S., Nishizawa, S. & Kakimoto, K., Nov 1 2010, In : Journal of Crystal Growth. 312, 22, p. 3349-3355 7 p.

Research output: Contribution to journalArticle

20 Citations (Scopus)

Numerical simulation of a new SiC growth system by the dual-directional sublimation method

Chen, X., Nishizawa, S. I. & Kakimoto, K., May 1 2010, In : Journal of Crystal Growth. 312, 10, p. 1697-1702 6 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)
2009

Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy

Nishizawa, S., Jan 15 2009, In : Journal of Crystal Growth. 311, 3, p. 871-874 4 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)
2008

Ultralow-loss SiC floating junction Schottky barrier diodes (Super-SBDs)

Nishio, J., Ota, C., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S. & Ohashi, H., Aug 18 2008, In : IEEE Transactions on Electron Devices. 55, 8, p. 1954-1960 7 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)
2007

Activation of p-type dopants in 4H-SiC using hybrid super-rapid thermal annealing equipment

Kinoshita, A., Suzuki, K., Senzaki, J., Katou, M., Harada, S., Okamato, M., Nishizawa, S. I., Fukuda, K., Morigasa, F., Endou, T., Isii, T. & Yashima, T., Aug 6 2007, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 8 A, p. 5342-5344 3 p.

Research output: Contribution to journalArticle

Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth

Nishizawa, S. I., Kato, T. & Arai, K., May 1 2007, In : Journal of Crystal Growth. 303, 1 SPEC. ISS., p. 342-344 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor

Nishizawa, S. & Pons, M., May 1 2007, In : Journal of Crystal Growth. 303, 1 SPEC. ISS., p. 334-336 3 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Observation of surface polarity dependent phonons in SiC by deep ultraviolet Raman spectroscopy

Nakashima, S., Mitani, T., Tomita, T., Kato, T., Nishizawa, S., Okumura, H. & Harima, H., Mar 23 2007, In : Physical Review B - Condensed Matter and Materials Physics. 75, 11, 115321.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2006

Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals

Nakashima, S., Kato, T., Nishizawa, S., Mitani, T., Okumura, H. & Yamamoto, T., Apr 1 2006, In : Journal of the Electrochemical Society. 153, 4

Research output: Contribution to journalArticle

7 Citations (Scopus)

Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor

Nishizawa, S. I. & Pons, M., Aug 1 2006, In : Chemical Vapor Deposition. 12, 8-9, p. 516-522 7 p.

Research output: Contribution to journalArticle

39 Citations (Scopus)

In-situ observation of SiC bulk single crystal growth by XRD system

Kato, T., Nishizawa, S. I., Yamaguchi, H. & Arai, K., Mar 2006, In : Journal of Rare Earths. 24, SUPPL., p. 49-53 5 p.

Research output: Contribution to journalArticle

Numerical modeling of SiC-CVD in a horizontal hot-wall reactor

Nishizawa, S. I. & Pons, M., Jan 2006, In : Microelectronic Engineering. 83, 1 SPEC. ISS., p. 100-103 4 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)
2003

Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Tanaka, Y., Nishizawa, S. I., Fukuda, K., Arai, K., Ohno, T., Oyanagi, N., Suzuki, T. & Yatsuo, T., Jul 14 2003, In : Applied Physics Letters. 83, 2, p. 377-379 3 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)

Healing defects in SiC wafers by liquid-phase epitaxy in Si melts

Nasir Khan, M., Nishizawa, S. I. & Arai, K., Jun 1 2003, In : Journal of Crystal Growth. 254, 1-2, p. 137-143 7 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Initial stage of GaN nucleation on √3 × √3 R 30°-Ga reconstructed 4H-SiC(0 0 0 1)Si by molecular-beam epitaxy

Jeganathan, K., Shimuzu, M., Okumura, H., Hirose, F. & Nishizawa, S., Mar 10 2003, In : Surface Science. 527, 1-3

Research output: Contribution to journalArticle

14 Citations (Scopus)

Numerical simulation of thermal transpiration in Capacitance diaphragm gauge

Nishizawa, S. I. & Hirata, M., Jan 1 2003, In : Shinku/Journal of the Vacuum Society of Japan. 46, 3, p. 197-199 3 p.

Research output: Contribution to journalArticle

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical Mosfets

Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S., Yatsuo, T., Okushi, H. & Arai, K., 2003, In : Materials Science Forum. 433-436, p. 669-672 4 p.

Research output: Contribution to journalArticle

10 Citations (Scopus)
2002

A method of reducing micropipes in thin films by using sublimation growth

Oyanagi, N., Nishizawa, S. & Arai, K., 2002, In : Materials Science Forum. 389-393, 1, p. 107-110 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Characterization of inclusions in SiC bulk crystals grown by modified lely method

Hirose, F., Kitou, Y., Oyanagi, N., Kato, T., Nishizawa, S. & Arai, K., Dec 1 2002, In : Materials Science Forum. 389-393, 1, p. 75-78 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)