• 989 Citations
  • 17 h-Index
1988 …2020

Research output per year

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Research Output

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Conference article
2009

Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

Fukuda, K., Harada, S., Senzaki, J., Okamoto, M., Tanaka, Y., Kinoshita, A., Kosugi, R., Kojima, K., Kato, M., Shimozato, A., Suzuki, K., Hayashi, Y., Takao, K., Kato, T., Nishizawa, S., Yatsuo, T., Okumura, H., Ohashi, H. & Arai, K., Apr 10 2009, In : Materials Science Forum. 600-603, p. 907-912 6 p.

Research output: Contribution to journalConference article

2007

Defect and growth analysis of SiC bulk single crystals with high nitrogen doping

Kato, T., Miura, T., Wada, K., Hozomi, E., Taniguchi, H., Nishizawa, S. I. & Arai, K., Dec 1 2007, In : Materials Science Forum. 556-557, p. 239-242 4 p.

Research output: Contribution to journalConference article

16 Citations (Scopus)

High throughput SiC wafer polishing with good surface morphology

Kato, T., Wada, K., Hozomi, E., Taniguchi, H., Miura, T., Nishizawa, S. I. & Arai, K., Dec 1 2007, In : Materials Science Forum. 556-557, p. 753-756 4 p.

Research output: Contribution to journalConference article

36 Citations (Scopus)

Simulation, fabrication and characterization of 4H-SiC floating junction schottky barrier diodes (Super-SBDs)

Ota, C., Nishio, J., Hatakeyama, T., Shinohe, T., Kojima, K., Nishizawa, S. & Ohashi, H., Dec 1 2007, In : Materials Science Forum. 556-557, p. 881-884 4 p.

Research output: Contribution to journalConference article

8 Citations (Scopus)
2005

Effect of growth condition on micropipe filling of 4H-SiC epitaxial layer

Kojima, K., Nishizawa, S., Kuroda, S., Okumura, H. & Arai, K., Feb 15 2005, In : Journal of Crystal Growth. 275, 1-2, p. e549-e554

Research output: Contribution to journalConference article

17 Citations (Scopus)

Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor

Nishizawa, S. I., Kojima, K., Kuroda, S., Arai, K. & Pons, M., Feb 15 2005, In : Journal of Crystal Growth. 275, 1-2, p. e515-e520

Research output: Contribution to journalConference article

14 Citations (Scopus)
2004

Continuous growth of SiC single crystal by the spray dried powder made of ultra-fine particle precursors

Yamada, Y., Nishizawa, S., Nakashima, S. & Arai, K., Nov 29 2004, In : Materials Science Forum. 457-460, I, p. 131-134 4 p.

Research output: Contribution to journalConference article

Fabrication of mesa-type pn diodes without forward degradation on ultara-high-quality 6H-SiC substrate

Tanaka, Y., Ohno, T., Oyanagi, N., Nishizawa, S., Suzuki, T., Fukuda, K., Yatsuo, T. & Arai, K., Nov 29 2004, In : Materials Science Forum. 457-460, II, p. 1009-1012 4 p.

Research output: Contribution to journalConference article

High-quality SiC bulk single crystal growth based on simulation and experiment

Nishizawa, S., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W. & Arai, K., Nov 29 2004, In : Materials Science Forum. 457-460, I, p. 29-34 6 p.

Research output: Contribution to journalConference article

17 Citations (Scopus)

Large diameter and long length growth of SiC single crystal

Kato, T., Ohno, T., Hirose, F., Oyanagi, N., Nishizawa, S. & Arai, K., Nov 29 2004, In : Materials Science Forum. 457-460, I, p. 99-102 4 p.

Research output: Contribution to journalConference article

9 Citations (Scopus)
2003

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Nishizawa, S., Michikawa, Y., Kato, T., Hirose, F., Oyanagi, N. & Arai, K., Nov 24 2003, In : Materials Science Forum. 433-436, p. 13-16 4 p.

Research output: Contribution to journalConference article

7 Citations (Scopus)
2001

Defect analysis of SiC sublimation growth by the in-situ X-ray topography

Kato, T., Oyanagi, N., Yamaguchi, H., Nishizawa, S. & Arai, K., Jan 1 2001, In : Materials Science Forum. 353-356, p. 295-298 4 p.

Research output: Contribution to journalConference article

New crucible design for SiC single crystal growth by sublimation

Nishizawa, S., Yamaguchi, H., Kato, T., Khan, M. N., Arai, K., Oyanagi, N., Kitou, Y. & Bahng, W., Jan 1 2001, In : Materials Research Society Symposium - Proceedings. 640, p. H1.5.1-H1.5.6

Research output: Contribution to journalConference article

3 Citations (Scopus)
2000

Beryllium implantation doping of silicon carbide

Henkel, T., Tanaka, Y., Kobayashi, N., Nishizawa, S. & Hishita, S., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

In-situ observation of SiC bulk single crystal growth by X-ray topography

Kato, T., Oyanagi, N., Yamaguchi, H., Takano, Y., Nishizawa, S. & Arai, K., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

3 Citations (Scopus)

Pressure effect in sublimation growth of bulk SiC

Kitou, Y., Bahng, W., Nishizawa, S. I., Nishino, S. & Arai, K., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

2 Citations (Scopus)

Shape of SiC bulk single crystal grown by sublimation

Nishizawa, S., Kitou, Y., Bahng, W., Oyanagi, N., Khan, M. N. & Arai, K., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

11 Citations (Scopus)

SiC single crystal growth rate measurement by in-situ observation using the transmission X-ray technique

Oyanagi, N., Nishizawa, S., Kato, T., Yamaguchi, H. & Arai, K., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

7 Citations (Scopus)

Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

Henkel, T., Ferro, G., Nishizawa, S., Pressler, H., Tanaka, Y., Tanoue, H. & Kobayashi, N., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article

1 Citation (Scopus)

X-ray topographic study of SiC crystal at high temperature

Yamaguchi, H., Oyanagi, N., Kato, T., Takano, Y., Nishizawa, S., Bahng, W., Yoshida, S. & Arai, K., Jan 1 2000, In : Materials Science Forum. 338

Research output: Contribution to journalConference article