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Research Output 1991 2019

2019
1 Citation (Scopus)
Open Access
solid phases
film thickness
transistors
insulators
nucleation

High mobility sputtered InSb film by blue laser diode annealing

Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S. & Noguchi, T., Apr 1 2019, In : AIP Advances. 9, 4, 045009.

Research output: Contribution to journalArticle

Open Access
semiconductor lasers
annealing
glass
melting points
radiant flux density

Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Gong, X., Xu, C. & Sadoh, T., Jul 2019, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8830601. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carrier mobility
Crystallization
carrier mobility
solid phases
Modulation

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., Jan 1 2019, Laser-Based Micro- and Nanoprocessing XIII. Klotzbach, U., Watanabe, A. & Kling, R. (eds.). SPIE, 109060J. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10906).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin-film Transistor
Excimer Laser
Excimer lasers
Thin film transistors
Polysilicon
Open Access
Gold
Crystallization
Temperature
Annealing
Flexible electronics
2018

Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., Aug 15 2018, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8437343. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

phosphoric acid
Phosphoric acid
Excimer lasers
Thin film transistors
Polysilicon
1 Citation (Scopus)

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)

Xu, C., Gao, H., Sugino, T., Miyao, M. & Sadoh, T., Jun 11 2018, In : Applied Physics Letters. 112, 24, 242103.

Research output: Contribution to journalArticle

carrier mobility
solid phases
insulators
nucleation
crystallization
carrier mobility
solid phases
insulators
nucleation
crystallization
2017
2 Citations (Scopus)

Characterization of Si thin films doped by wet-chemical laser processing

Suwa, A., Tanaka, N., Sadoh, T., Nakamura, D. & Ikenoue, H., Jan 1 2017, In : Digest of Technical Papers - SID International Symposium. 48, 1, p. 430-432 3 p.

Research output: Contribution to journalConference article

Chemical lasers
Doping (additives)
Thin films
Processing
Ion implantation

Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Gao, H., Aoki, R., Sasaki, M., Miyao, M. & Sadoh, T., Jun 30 2017, 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., p. 21-22 2 p. 7966503. (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Integrated circuits
Crystalline materials
Temperature
Electrons

Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing

Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N. & Miyao, M., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 8-11 4 p.

Research output: Contribution to journalArticle

laser annealing
Laser pulses
insulators
Single crystals
Annealing
1 Citation (Scopus)

Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼ 10%) GeSn on insulator enhanced by weak laser irradiation

Moto, K., Sugino, T., Matsumura, R., Ikenoue, H., Miyao, M. & Sadoh, T., Jul 1 2017, In : AIP Advances. 7, 7, 075204.

Research output: Contribution to journalArticle

solid phases
insulators
crystallization
irradiation
fluence

Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

Gao, H., Aoki, R., Sasaki, M., Miyao, M. & Sadoh, T., Aug 8 2017, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 239-240 2 p. 8006136

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated circuits
Crystallization
Crystalline materials
Optical devices
Annealing
15 Citations (Scopus)

Novel growth techniques of group-IV based semiconductors on insulator for next-generation electronics

Miyao, M. & Sadoh, T., May 1 2017, In : Japanese Journal of Applied Physics. 56, 05DA06.

Research output: Contribution to journalReview article

Crystal growth
Electronic equipment
Carrier mobility
insulators
Semiconductor materials

Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C)

Sugino, T., Moto, K., Ikenoue, H., Miyao, M. & Sadoh, T., Aug 8 2017, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 241-243 3 p. 8006137

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser beam effects
Film thickness
Crystallization
Annealing
Temperature

Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

Sugino, T., Moto, K., Ikenoue, H., Miyao, M. & Sadoh, T., Jun 30 2017, 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., p. 19-20 2 p. 7966502. (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser beam effects
Crystallization
Band structure
Carrier mobility
Thin film transistors
2016

Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H. & Miyao, M., 2016, Thin Film Transistors 13, TFT 13. 10 ed. Electrochemical Society Inc., Vol. 75. p. 109-113 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Optical devices
Pulsed lasers
Quartz
Crystallization
2 Citations (Scopus)

Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure

Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T. & Hashim, A. M., Apr 1 2016, In : Materials Letters. 168, p. 223-227 5 p.

Research output: Contribution to journalArticle

Germanium
Graphite
Graphene
germanium
graphene

Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth

Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T. & Hashim, A. M., Sep 1 2016, In : Materials Letters. 178, p. 147-150 4 p.

Research output: Contribution to journalArticle

Germanium
Graphite
Graphene
germanium
graphene
20 Citations (Scopus)

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Sadoh, T., Kai, Y., Matsumura, R., Moto, K. & Miyao, M., Dec 5 2016, In : Applied Physics Letters. 109, 23, 232106.

Research output: Contribution to journalArticle

carrier mobility
solid phases
film thickness
grain size
insulators
4 Citations (Scopus)

High Sn-concentration (~ 8%) GeSn by low-temperature (~ 150 °c) solid-phase epitaxy of a-GeSn/c-Ge

Sadoh, T., Ooato, A., Park, J. H. & Miyao, M., Mar 1 2016, In : Thin Solid Films. 602, p. 20-23 4 p.

Research output: Contribution to journalArticle

Epitaxial growth
epitaxy
solid phases
Growth temperature
Crystals

Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics

Sasaki, M., Miyao, M. & Sadoh, T., Aug 15 2016, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 191-193 3 p. 7543662

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Crystallization
Aluminum
Growth temperature
Nucleation
1 Citation (Scopus)

Low-temperature (≤ 300 °c) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich SiGe on insulator by gold-induced crystallization

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Mar 1 2016, In : Thin Solid Films. 602, p. 3-6 4 p.

Research output: Contribution to journalArticle

Crystallization
Gold
insulators
Annealing
crystallization
3 Citations (Scopus)
Diffusion barriers
Crystallization
Gold
Seed
Thin film devices

Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization

Sakai, T., Matsumura, R., Sadoh, T. & Miyao, M., Jan 1 2016, Thin Film Transistors 13, TFT 13. 10 ed. Electrochemical Society Inc., Vol. 75. p. 105-108 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Substrates
Metals
Flexible electronics
Temperature

Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

Sadoh, T., Aoki, R., Tanaka, T., Park, J. H. & Miyao, M., Jan 1 2016, Thin Film Transistors 13, TFT 13. Kuo, Y. (ed.). 10 ed. Electrochemical Society Inc., Vol. 75. p. 95-103 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Growth temperature
Crystals
Position control
Crystal orientation
9 Citations (Scopus)

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H. & Miyao, M., Jun 27 2016, In : Applied Physics Letters. 108, 26, 262105.

Research output: Contribution to journalArticle

laser annealing
insulators
pulses
pulsed lasers
transistors
10 Citations (Scopus)

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Mar 1 2016, In : Japanese Journal of Applied Physics. 55, 3, 03CB01.

Research output: Contribution to journalArticle

Flexible electronics
Crystallization
insulators
Single crystals
crystallization

Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator

Kai, Y., Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 1 2016, In : ECS Journal of Solid State Science and Technology. 5, 2, p. P76-P79

Research output: Contribution to journalArticle

Growth temperature
Crystalline materials
Seed
Amorphous films
Annealing
2015

Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Jan 1 2015, ULSI Process Integration 9. Murota, J., Claeys, C., Deleonibus, S., Tao, M. & Iwai, H. (eds.). 10 ed. Electrochemical Society Inc., p. 21-27 7 p. (ECS Transactions; vol. 69, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Growth temperature
Gold
Single crystals
Plastic sheets
2 Citations (Scopus)

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

Matsumura, R., Kai, Y., Chikita, H., Sadoh, T. & Miyao, M., Jun 1 2015, In : AIP Advances. 5, 6, 067112.

Research output: Contribution to journalArticle

annealing
liquids
crystals
nuclei
liquidus
10 Citations (Scopus)

Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Matsumura, R., Chikita, H., Kai, Y., Sadoh, T., Ikenoue, H. & Miyao, M., Dec 28 2015, In : Applied Physics Letters. 107, 26, 262106.

Research output: Contribution to journalArticle

inoculation
solid phases
laser annealing
crystallization
lasers

Non-thermal equilibrium formation of Ge1-xSnx (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

Moto, K., Matsumura, R., Chikita, H., Sadoh, T., Ikenoue, H. & Miyao, M., Jan 1 2015, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. Kar, S., Misra, D., Kita, K. & Landheer, D. (eds.). 5 ed. Electrochemical Society Inc., p. 297-300 4 p. (ECS Transactions; vol. 69, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Pulsed lasers
Annealing
Crystals
Quartz

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Jul 30 2015, Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 143-146 4 p. 7173225. (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Crystallization
Single crystals
Crystals
Crystal orientation
5 Citations (Scopus)

Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)

Matsumura, R., Sasaki, M., Chikita, H., Sadoh, T. & Miyao, M., Jan 1 2015, In : ECS Solid State Letters. 4, 12, p. P95-P97

Research output: Contribution to journalArticle

Thin film transistors
Crystallization
Film thickness
Amorphous films
Substrates

Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding

Matsumura, R., Moto, K., Kai, Y., Sadoh, T., Ikenoue, H. & Miyao, M., Jan 1 2015, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. Kar, S., Misra, D., Kita, K. & Landheer, D. (eds.). 5 ed. Electrochemical Society Inc., Vol. 69. p. 301-304 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film devices
Crystallization
Lasers
Amorphous films
Substrates
3 Citations (Scopus)

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

Sadoh, T., Chikita, H., Matsumura, R. & Miyao, M., Aug 20 2015, In : Journal of Applied Physics. 118, 9, 095707.

Research output: Contribution to journalArticle

cryogenic temperature
annealing
liquids
integrated circuits
temperature
2014
22 Citations (Scopus)
plastics
Gold
Crystallization
crystallization
gold

Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization

Sadoh, T., Kurosawa, M., Toko, K. & Miyao, M., Apr 30 2014, In : Thin Solid Films. 557, p. 135-138 4 p.

Research output: Contribution to journalArticle

Crystallization
Melting
melting
crystallization
Coalescence
32 Citations (Scopus)

Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO 2 substrates

Kurosawa, M., Sadoh, T. & Miyao, M., Jan 1 2014, In : Journal of Applied Physics. 116, 17, 173510.

Research output: Contribution to journalArticle

crystals
oxides
air
crystallization
annealing

Dynamic analysis of rapid-melting growth using SiGe on insulator

Matsumura, R., Tojo, Y., Kurosawa, M., Sadoh, T. & Miyao, M., Apr 30 2014, In : Thin Solid Films. 557, p. 125-128 4 p.

Research output: Contribution to journalArticle

Dynamic analysis
Melting
melting
insulators
Visualization

Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

Higashi, H., Fujita, Y., Kawano, M., Hirayama, J., Yamada, S., Park, J. H., Sadoh, T., Miyao, M. & Hamaya, K., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 59-60 2 p. 6874683. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Magnetoelectronics
Epitaxial growth
Display devices
Crystalline materials
Substrates

Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth

Matsumura, R., Chikita, H., Sadoh, T. & Miyao, M., Jan 16 2014, Quantum, Nano, Micro Technologies and Applied Researches. p. 27-29 3 p. (Applied Mechanics and Materials; vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Rapid thermal annealing
Crystals
Melting point
Solidification

Formation of large grain Ge single crystal on insulating substrate by liquid-solid coexisting annealing of a-Ge(Sn)

Matsumura, R., Kai, Y., Chikita, H., Sadoh, T. & Miyao, M., Jan 1 2014, In : ECS Transactions. 61, 3, p. 97-100 4 p.

Research output: Contribution to journalConference article

annealing
Single crystals
Annealing
crystal
substrate
1 Citation (Scopus)

Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics

Park, J. H., Miyao, M. & Sadoh, T., Jan 1 2014, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, p. 291-294 4 p. 6867200. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Nucleation
Single crystals
Plastics
Interdiffusion (solids)
6 Citations (Scopus)

Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

Matsumura, R., Kato, R., Tojo, Y., Kurosawa, M., Sadoh, T. & Miyao, M., Jan 1 2014, In : ECS Solid State Letters. 3, 5, p. P61-P64

Research output: Contribution to journalArticle

Melting
Crystals
Liquids
Substrates
Thin film transistors
44 Citations (Scopus)

High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Park, J. H., Kasahara, K., Hamaya, K., Miyao, M. & Sadoh, T., Jun 23 2014, In : Applied Physics Letters. 104, 25, 252110.

Research output: Contribution to journalArticle

carrier mobility
plastics
nucleation
crystallization
gold
2 Citations (Scopus)

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

Chikita, H., Matsumura, R., Tojo, Y., Yokoyama, H., Sadoh, T. & Miyao, M., Apr 30 2014, In : Thin Solid Films. 557, p. 139-142 4 p.

Research output: Contribution to journalArticle

Melting
melting
insulators
Hole mobility
Functional materials
7 Citations (Scopus)

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Matsumura, R., Kato, R., Sadoh, T. & Miyao, M., Sep 8 2014, In : Applied Physics Letters. 105, 10, 102106.

Research output: Contribution to journalArticle

melting
insulators
cooling
nucleation
photosensors

Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure

Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 16 2014, Quantum, Nano, Micro Technologies and Applied Researches. p. 137-140 4 p. (Applied Mechanics and Materials; vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Annealing
Liquids
Temperature
Integrated circuits