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Research Output 1991 2019

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Conference contribution
2019

Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Gong, X., Xu, C. & Sadoh, T., Jul 2019, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8830601. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carrier mobility
Crystallization
carrier mobility
solid phases
Modulation

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., Jan 1 2019, Laser-Based Micro- and Nanoprocessing XIII. Klotzbach, U., Watanabe, A. & Kling, R. (eds.). SPIE, 109060J. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 10906).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin-film Transistor
Excimer Laser
Excimer lasers
Thin film transistors
Polysilicon
2018

Characterization of Excimer-Laser Doping of a Poly-Si Thin Film with a Phosphoric-Acid Coating for Thin-Film-Transistor Fabrication

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T. & Ikenoue, H., Aug 15 2018, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 8437343. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

phosphoric acid
Phosphoric acid
Excimer lasers
Thin film transistors
Polysilicon
2017

Formation of n-type Ge on insulator by low-temperature Sb-induced layer exchange crystallization

Gao, H., Aoki, R., Sasaki, M., Miyao, M. & Sadoh, T., Jun 30 2017, 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., p. 21-22 2 p. 7966503. (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Integrated circuits
Crystalline materials
Temperature
Electrons

Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

Gao, H., Aoki, R., Sasaki, M., Miyao, M. & Sadoh, T., Aug 8 2017, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 239-240 2 p. 8006136

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integrated circuits
Crystallization
Crystalline materials
Optical devices
Annealing

Thickness-dependent substitutional-Sn-Concentration in GeSn-on-Insulator by weak-laser-irradiation-enhanced solid-phase crystallization at low-Temperature (180°C)

Sugino, T., Moto, K., Ikenoue, H., Miyao, M. & Sadoh, T., Aug 8 2017, AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 241-243 3 p. 8006137

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser beam effects
Film thickness
Crystallization
Annealing
Temperature

Weak-laser-irradiation-enhanced solid-phase crystallization of GeSn-on-insulator at low-temperature (180°C) - Thickness-dependent high substitutional-Sn-concentration

Sugino, T., Moto, K., Ikenoue, H., Miyao, M. & Sadoh, T., Jun 30 2017, 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., p. 19-20 2 p. 7966502. (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laser beam effects
Crystallization
Band structure
Carrier mobility
Thin film transistors
2016

Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H. & Miyao, M., 2016, Thin Film Transistors 13, TFT 13. 10 ed. Electrochemical Society Inc., Vol. 75. p. 109-113 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Optical devices
Pulsed lasers
Quartz
Crystallization

Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics

Sasaki, M., Miyao, M. & Sadoh, T., Aug 15 2016, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 191-193 3 p. 7543662

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Crystallization
Aluminum
Growth temperature
Nucleation

Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization

Sakai, T., Matsumura, R., Sadoh, T. & Miyao, M., Jan 1 2016, Thin Film Transistors 13, TFT 13. 10 ed. Electrochemical Society Inc., Vol. 75. p. 105-108 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Substrates
Metals
Flexible electronics
Temperature

Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

Sadoh, T., Aoki, R., Tanaka, T., Park, J. H. & Miyao, M., Jan 1 2016, Thin Film Transistors 13, TFT 13. Kuo, Y. (ed.). 10 ed. Electrochemical Society Inc., Vol. 75. p. 95-103 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Growth temperature
Crystals
Position control
Crystal orientation
2015

Gold-induced low-temperature (≤300°C) growth of quasi-single crystal SiGe on insulator for advanced flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Jan 1 2015, ULSI Process Integration 9. Murota, J., Claeys, C., Deleonibus, S., Tao, M. & Iwai, H. (eds.). 10 ed. Electrochemical Society Inc., p. 21-27 7 p. (ECS Transactions; vol. 69, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Growth temperature
Gold
Single crystals
Plastic sheets

Non-thermal equilibrium formation of Ge1-xSnx (0蠆x蠆0.2) crystals on insulator by pulsed laser annealing

Moto, K., Matsumura, R., Chikita, H., Sadoh, T., Ikenoue, H. & Miyao, M., Jan 1 2015, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. Kar, S., Misra, D., Kita, K. & Landheer, D. (eds.). 5 ed. Electrochemical Society Inc., p. 297-300 4 p. (ECS Transactions; vol. 69, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Pulsed lasers
Annealing
Crystals
Quartz

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Jul 30 2015, Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 143-146 4 p. 7173225. (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Crystallization
Single crystals
Crystals
Crystal orientation

Ultra-low temperature (∼180°C) solid-phase crystallization of GeSn on insulator triggered by laser-anneal seeding

Matsumura, R., Moto, K., Kai, Y., Sadoh, T., Ikenoue, H. & Miyao, M., Jan 1 2015, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13. Kar, S., Misra, D., Kita, K. & Landheer, D. (eds.). 5 ed. Electrochemical Society Inc., Vol. 69. p. 301-304 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film devices
Crystallization
Lasers
Amorphous films
Substrates
2014

Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate

Higashi, H., Fujita, Y., Kawano, M., Hirayama, J., Yamada, S., Park, J. H., Sadoh, T., Miyao, M. & Hamaya, K., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 59-60 2 p. 6874683. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Magnetoelectronics
Epitaxial growth
Display devices
Crystalline materials
Substrates

Formation of giant SiGe crystals on insulator by self-organized-seeding rapid-melting growth

Matsumura, R., Chikita, H., Sadoh, T. & Miyao, M., Jan 16 2014, Quantum, Nano, Micro Technologies and Applied Researches. p. 27-29 3 p. (Applied Mechanics and Materials; vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Rapid thermal annealing
Crystals
Melting point
Solidification
1 Citation (Scopus)

Formation of quasi-single-crystal Ge on plastic by nucleation-controlled Au-induced layer-exchange growth for flexible electronics

Park, J. H., Miyao, M. & Sadoh, T., Jan 1 2014, Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. IEEE Computer Society, p. 291-294 4 p. 6867200. (Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Nucleation
Single crystals
Plastics
Interdiffusion (solids)

Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure

Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 16 2014, Quantum, Nano, Micro Technologies and Applied Researches. p. 137-140 4 p. (Applied Mechanics and Materials; vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Annealing
Liquids
Temperature
Integrated circuits

Ultralow-temperature catalyst-induced-crystallization of SiGe on plastic for flexible electronics

Sadoh, T., Park, J. H., Kurosawa, M. & Miyao, M., Jan 1 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 47-48 2 p. 6874633. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Flexible electronics
Crystallization
Plastics
Catalysts
Functional materials
2013

Formation of Ge-on-Insulator Structures on Si platform by SiGe-mixing-triggered rapid-melting growth using RTA technique

Mizushima, I., Sadoh, T. & Miyao, M., 2013, Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. IEEE Computer Society, p. 30-31 2 p. 6644498

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rapid thermal annealing
Melting
2012

(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M. & Sadoh, T., Oct 31 2012, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. p. 231-234 4 p. 6294891

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gold
Crystallization
Substrates
Oxides
Nucleation

Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Kino, S., Heya, A., Nonomura, Y., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T. & Miyao, M., Oct 31 2012, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. p. 223-226 4 p. 6294889. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Irradiation
X rays
Core levels
Storage rings

Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T. & Miyao, M., Jul 30 2012, IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai. p. 98-99 2 p. 6218600. (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Excimer lasers
Crystallization
Annealing
X rays
Storage rings

Formation of graded SiGe on insulator by segregation-controlled rapid-melting-growth

Matsumura, R., Tojo, Y., Yokoyama, H., Kurosawa, M., Sadoh, T. & Miyao, M., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 747-751 5 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Lattice constants
Raman scattering
Single crystals
Spectroscopy
1 Citation (Scopus)

Formation of large grain SiGe on insulator by Si segregation in seedless-rapid-melting process

Kato, R., Kurosawa, M., Matsumura, R., Tojo, Y., Sadoh, T. & Miyao, M., Dec 1 2012, SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. p. 431-436 6 p. (ECS Transactions; vol. 50, no. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Rapid thermal annealing
Crystals
Melting point
Solidification

Formation of nanostructured germanium-on-insulator for integration of multi-functional materials on a panel

Anisuzzaman, M., Muta, S., Hashim, A. M., Miyao, M. & Sadoh, T., Oct 31 2012, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. p. 235-238 4 p. 6294892. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Functional materials
Germanium
Epitaxial growth
Single crystals
Magnetoelectronics

Hybrid-formation of Ge-on-insulator structures on Si platform by SiGe-mixing-triggered rapid-melting growth - A road to artificial crystal

Miyao, M., Kurosawa, M., Toko, K., Tojo, Y. & Sadoh, T., Dec 1 2012, High Purity Silicon 12. 5 ed. Vol. 50. p. 59-70 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Crystals
Hole mobility
Thin film transistors
Thermal gradients
2011
2 Citations (Scopus)

Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T. & Miyao, M., 2011, Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1. p. 659-662 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Synchrotrons
Motion Pictures
Crystallization
Synchrotron radiation
X-Rays
3 Citations (Scopus)

Au-catalyst induced low temperature (∼250 °C) layer exchange crystallization for SiGe on insulator

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M. & Sadoh, T., Aug 2 2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15. 5 ed. p. 39-42 4 p. (ECS Transactions; vol. 35, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Catalysts
Gold
Substrates
Thin film transistors

Growth-direction dependent rapid-melting-growth of Ge-on-Insulator (GOI) and its application to Ge mesh-growth

Yokoyama, H., Ohta, Y., Toko, K., Sadoh, T. & Miyao, M., Aug 2 2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15. 5 ed. p. 55-60 6 p. (ECS Transactions; vol. 35, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Seed
Crystal orientation
Single crystals
Crystal growth

Lateral-liquid phase epitaxy of (101) Ge-on-insulator from Si template by metal-induced crystallization

Kurosawa, M., Kawabata, N., Kato, R., Sadoh, T. & Miyao, M., Aug 2 2011, Advanced Semiconductor-on-Insulator Technology and Related Physics 15. 5 ed. p. 51-54 4 p. (ECS Transactions; vol. 35, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liquid phase epitaxy
Crystallization
Thin film transistors
Metals
Seed
4 Citations (Scopus)

SiGe-mixing-triggered rapid-melting-growth of high-mobility Ge-on-insulator

Sadoh, T., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., Kawabata, N., Yokoyama, H. & Miyao, M., Mar 23 2011, Technology Evolution for Silicon Nano-Electronics. p. 8-13 6 p. (Key Engineering Materials; vol. 470).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Substrates
Quartz
Hole mobility
Crystallization
2010

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

Miyao, M., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., Kawabata, N., Yokoyama, H. & Sadoh, T., Dec 1 2010, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 827-830 4 p. 5667440. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Single crystals
Defects
Substrates
Hole mobility
1 Citation (Scopus)

High-mobility Ge on insulator (GOI) by SiGe mixing-triggered rapid-melting-growth

Sadoh, T. & Miyao, M., Dec 1 2010, SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 ed. p. 409-418 10 p. (ECS Transactions; vol. 33, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Melting
Thin film transistors
Integrated circuits
Substrates
Hole mobility
1 Citation (Scopus)

Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M. & Sadoh, T., 2010, TENCON 2010 - 2010 IEEE Region 10 Conference. p. 2196-2198 3 p. 5686705

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Polysilicon
Gold
Crystallization
Substrates
Annealing
2008

Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Miyao, M., Ando, Y., Ueda, K., Hamaya, K., Nozaki, Y., Sadoh, T., Matsuyama, K., Narumi, K. & Maeda, Y., Dec 1 2008, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 688-691 4 p. 4734647

Research output: Chapter in Book/Report/Conference proceedingConference contribution

hybrid structures
Transistors
transistors
Semiconductor materials
Growth temperature

Characterization of Fe3Si/Si schottky contact for future spin-transistor

Kishi, Y., Kumano, M., Ueda, K., Sadoh, T. & Miyao, M., 2008, ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. Vol. 16. p. 277-280 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistors
Thermodynamic stability
Annealing
2 Citations (Scopus)

Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Miyao, M., Kanno, H. & Sadoh, T., Apr 21 2008, Sixth International Conference on Thin Film Physics and Applications. Vol. 6984. 69840L

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin-film Transistor
SiGe
Growth temperature
Thin film transistors
Crystallization

Enhancement of local strain in Si microstructure by oxidation induced Ge condensation

Tanaka, M., Tanaka, T., Sadoh, T., Morioka, J., Kitamura, T. & Miyao, M., Dec 1 2008, ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. p. 189-192 4 p. (ECS Transactions; vol. 16, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Condensation
Oxidation
Microstructure
Atoms
Defects

Formalion of SiGe quasi-single crystal grain on insulator by indentation-induced solid-phase crystallization

Sadoh, T., Toko, K. & Miyao, M., Dec 1 2008, ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. p. 219-222 4 p. (ECS Transactions; vol. 16, no. 10).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Indentation
Crystallization
Single crystals
Nucleation
Display devices

Low temperature epitaxial growth of full heusler alloy Fe2MnSi on Ge(111) substrates for spintronics application

Ueda, K., Ando, Y., Yamamoto, K., Kumano, M., Hamaya, K., Sadoh, T., Nammi, K., Maeda, Y. & Miyao, M., Dec 1 2008, ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. Vol. 16. p. 273-276 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Magnetoelectronics
Epitaxial growth
Epitaxial layers
Substrates
Electron diffraction

Site preference of atoms in heusler alloys Fe3Si and Fe 2MnSi grown on ge(111) toward realization of Ge channel spin transistors

Maeda, Y., Hiraiwa, Y., Narumi, K., Kawasuso, A., Terai, Y., Ando, Y., Ueda, K., Sadoh, T., Hamaya, K. & Miyao, M., 2008, Materials Research Society Symposium Proceedings - New Materials with High Spin Polarization and Their Applications. Vol. 1119. p. 13-18 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistors
transistors
Atoms
Epitaxial growth
epitaxy
2007
1 Citation (Scopus)

Comparative study of Al-induced crystallization for poly-Si and Ge on insulating film

Tsumura, Y., Nakao, I., Kanno, H., Kenjo, A., Sadoh, T. & Miyao, M., Dec 1 2007, ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 ed. p. 395-400 6 p. (ECS Transactions; vol. 11, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Polysilicon
Crystallization
Annealing
Temperature

Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate

Kumano, M., Ando, Y., Ueda, K., Sadoh, T., Narumi, K., Maeda, Y. & Miyao, M., 2007, ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 ed. Vol. 11. p. 481-485 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Growth temperature
Molecular beam epitaxy
Substrates
Transmission electron microscopy

Formation of Fe3Si/Ge/Fe3Si multi-layer by double heteroepitaxy on high quality Fe3Si/Ge substrate for spintronics application

Ueda, K., Ando, Y., Kumano, M., Sadoh, T., Maeda, Y. & Miyao, M., Dec 1 2007, ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 ed. p. 487-491 5 p. (ECS Transactions; vol. 11, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Magnetoelectronics
Epitaxial growth
Substrates
High energy electron diffraction
Stacking faults

High-performance poly-Ge thin-film transistor with NiGe Schottky source/drain

Sadoh, T., Kamizuru, H., Kenjo, A. & Miyao, M., Dec 1 2007, Selected, peer reviewed papers from The Sixth Pacific Rim International Conference on Advanced Materials and Processing, PRICM 6. PART 2 ed. p. 1181-1184 4 p. (Materials Science Forum; vol. 561-565, no. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Annealing
Quartz
Hole mobility
Leakage currents

Low-temperature epitaxial growth of [Fe3Si/SiGe]n (n=1-2) multi-layered structures for spintronics application

Sadoh, T., Ueda, K., Ando, Y., Kumano, M., Narumi, K., Maeda, Y. & Miyao, M., Dec 1 2007, ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 ed. p. 473-479 7 p. (ECS Transactions; vol. 11, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Magnetoelectronics
Epitaxial growth
Substrates
Temperature
Thermodynamic stability
2006
2 Citations (Scopus)

Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization

Kanno, H., Kenjo, A., Sadoh, T. & Miyao, M., Aug 23 2006, Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. p. 257-262 6 p. (Materials Research Society Symposium Proceedings; vol. 891).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystallization
Nanowires
Metals
Electric fields
Polysilicon

Recent progress of SiGe heterostructure technologies for novel devices

Miyao, M., Kanno, H. & Sadoh, T., Jul 3 2006, Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 ed. Vol. 2. p. 165-179 15 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Magnetoelectronics
Thin film transistors
Epitaxial growth
Heterojunctions
Crystallization