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Research Output 1991 2019

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Article
2019
1 Citation (Scopus)
Open Access
solid phases
film thickness
transistors
insulators
nucleation

High mobility sputtered InSb film by blue laser diode annealing

Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S. & Noguchi, T., Apr 1 2019, In : AIP Advances. 9, 4, 045009.

Research output: Contribution to journalArticle

Open Access
semiconductor lasers
annealing
glass
melting points
radiant flux density
Open Access
Gold
Crystallization
Temperature
Annealing
Flexible electronics
2018
1 Citation (Scopus)

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s)

Xu, C., Gao, H., Sugino, T., Miyao, M. & Sadoh, T., Jun 11 2018, In : Applied Physics Letters. 112, 24, 242103.

Research output: Contribution to journalArticle

carrier mobility
solid phases
insulators
nucleation
crystallization
2017

Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing

Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N. & Miyao, M., Nov 1 2017, In : Materials Science in Semiconductor Processing. 70, p. 8-11 4 p.

Research output: Contribution to journalArticle

laser annealing
Laser pulses
insulators
Single crystals
Annealing
1 Citation (Scopus)

Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration (∼ 10%) GeSn on insulator enhanced by weak laser irradiation

Moto, K., Sugino, T., Matsumura, R., Ikenoue, H., Miyao, M. & Sadoh, T., Jul 1 2017, In : AIP Advances. 7, 7, 075204.

Research output: Contribution to journalArticle

solid phases
insulators
crystallization
irradiation
fluence
2016
2 Citations (Scopus)

Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure

Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T. & Hashim, A. M., Apr 1 2016, In : Materials Letters. 168, p. 223-227 5 p.

Research output: Contribution to journalArticle

Germanium
Graphite
Graphene
germanium
graphene

Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth

Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T. & Hashim, A. M., Sep 1 2016, In : Materials Letters. 178, p. 147-150 4 p.

Research output: Contribution to journalArticle

Germanium
Graphite
Graphene
germanium
graphene
20 Citations (Scopus)

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

Sadoh, T., Kai, Y., Matsumura, R., Moto, K. & Miyao, M., Dec 5 2016, In : Applied Physics Letters. 109, 23, 232106.

Research output: Contribution to journalArticle

carrier mobility
solid phases
film thickness
grain size
insulators
4 Citations (Scopus)

High Sn-concentration (~ 8%) GeSn by low-temperature (~ 150 °c) solid-phase epitaxy of a-GeSn/c-Ge

Sadoh, T., Ooato, A., Park, J. H. & Miyao, M., Mar 1 2016, In : Thin Solid Films. 602, p. 20-23 4 p.

Research output: Contribution to journalArticle

Epitaxial growth
epitaxy
solid phases
Growth temperature
Crystals
1 Citation (Scopus)

Low-temperature (≤ 300 °c) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich SiGe on insulator by gold-induced crystallization

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Mar 1 2016, In : Thin Solid Films. 602, p. 3-6 4 p.

Research output: Contribution to journalArticle

Crystallization
Gold
insulators
Annealing
crystallization
3 Citations (Scopus)
Diffusion barriers
Crystallization
Gold
Seed
Thin film devices
9 Citations (Scopus)

Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration

Moto, K., Matsumura, R., Sadoh, T., Ikenoue, H. & Miyao, M., Jun 27 2016, In : Applied Physics Letters. 108, 26, 262105.

Research output: Contribution to journalArticle

laser annealing
insulators
pulses
pulsed lasers
transistors
10 Citations (Scopus)

Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics

Sadoh, T., Park, J. H., Aoki, R. & Miyao, M., Mar 1 2016, In : Japanese Journal of Applied Physics. 55, 3, 03CB01.

Research output: Contribution to journalArticle

Flexible electronics
Crystallization
insulators
Single crystals
crystallization

Seeding effects of Sn/a-Ge island structures for low-temperature lateral-growth of a-GeSn on insulator

Kai, Y., Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 1 2016, In : ECS Journal of Solid State Science and Technology. 5, 2, p. P76-P79

Research output: Contribution to journalArticle

Growth temperature
Crystalline materials
Seed
Amorphous films
Annealing
2015
2 Citations (Scopus)

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

Matsumura, R., Kai, Y., Chikita, H., Sadoh, T. & Miyao, M., Jun 1 2015, In : AIP Advances. 5, 6, 067112.

Research output: Contribution to journalArticle

annealing
liquids
crystals
nuclei
liquidus
10 Citations (Scopus)

Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Matsumura, R., Chikita, H., Kai, Y., Sadoh, T., Ikenoue, H. & Miyao, M., Dec 28 2015, In : Applied Physics Letters. 107, 26, 262106.

Research output: Contribution to journalArticle

inoculation
solid phases
laser annealing
crystallization
lasers
5 Citations (Scopus)

Thickness dependent solid-phase crystallization of amorphous GeSn on insulating substrates at low temperatures (≤250°C)

Matsumura, R., Sasaki, M., Chikita, H., Sadoh, T. & Miyao, M., Jan 1 2015, In : ECS Solid State Letters. 4, 12, p. P95-P97

Research output: Contribution to journalArticle

Thin film transistors
Crystallization
Film thickness
Amorphous films
Substrates
3 Citations (Scopus)

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

Sadoh, T., Chikita, H., Matsumura, R. & Miyao, M., Aug 20 2015, In : Journal of Applied Physics. 118, 9, 095707.

Research output: Contribution to journalArticle

cryogenic temperature
annealing
liquids
integrated circuits
temperature
2014
22 Citations (Scopus)
plastics
Gold
Crystallization
crystallization
gold

Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization

Sadoh, T., Kurosawa, M., Toko, K. & Miyao, M., Apr 30 2014, In : Thin Solid Films. 557, p. 135-138 4 p.

Research output: Contribution to journalArticle

Crystallization
Melting
melting
crystallization
Coalescence
32 Citations (Scopus)

Comprehensive study of Al-induced layer-exchange growth for orientation-controlled Si crystals on SiO 2 substrates

Kurosawa, M., Sadoh, T. & Miyao, M., Jan 1 2014, In : Journal of Applied Physics. 116, 17, 173510.

Research output: Contribution to journalArticle

crystals
oxides
air
crystallization
annealing

Dynamic analysis of rapid-melting growth using SiGe on insulator

Matsumura, R., Tojo, Y., Kurosawa, M., Sadoh, T. & Miyao, M., Apr 30 2014, In : Thin Solid Films. 557, p. 125-128 4 p.

Research output: Contribution to journalArticle

Dynamic analysis
Melting
melting
insulators
Visualization
6 Citations (Scopus)

Giant-lateral-growth of SiGe stripes on insulating-substrate by self-organized-seeding and rapid-melting-growth in solid-liquid coexisting region

Matsumura, R., Kato, R., Tojo, Y., Kurosawa, M., Sadoh, T. & Miyao, M., Jan 1 2014, In : ECS Solid State Letters. 3, 5, p. P61-P64

Research output: Contribution to journalArticle

Melting
Crystals
Liquids
Substrates
Thin film transistors
44 Citations (Scopus)

High carrier mobility in orientation-controlled large-grain (>50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Park, J. H., Kasahara, K., Hamaya, K., Miyao, M. & Sadoh, T., Jun 23 2014, In : Applied Physics Letters. 104, 25, 252110.

Research output: Contribution to journalArticle

carrier mobility
plastics
nucleation
crystallization
gold
2 Citations (Scopus)

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

Chikita, H., Matsumura, R., Tojo, Y., Yokoyama, H., Sadoh, T. & Miyao, M., Apr 30 2014, In : Thin Solid Films. 557, p. 139-142 4 p.

Research output: Contribution to journalArticle

Melting
melting
insulators
Hole mobility
Functional materials
7 Citations (Scopus)

Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth

Matsumura, R., Kato, R., Sadoh, T. & Miyao, M., Sep 8 2014, In : Applied Physics Letters. 105, 10, 102106.

Research output: Contribution to journalArticle

melting
insulators
cooling
nucleation
photosensors
1 Citation (Scopus)

Self-organized travelling-zone-melting growth of a-Ge/Sn/c-Ge stacked-structures for high-quality GeSn

Matsumura, R., Kinoshita, Y., Tojo, Y., Sadoh, T., Nishimura, T. & Miyao, M., 2014, In : ECS Journal of Solid State Science and Technology. 3, 10, p. P340-P343

Research output: Contribution to journalArticle

Zone melting
Annealing
Substrates
Atoms
Epitaxial growth
1 Citation (Scopus)

Sn-induced low-temperature (∼ 150 °c) crystallization of Ge on insulator

Ooato, A., Suzuki, T., Park, J. H., Miyao, M. & Sadoh, T., Apr 30 2014, In : Thin Solid Films. 557, p. 155-158 4 p.

Research output: Contribution to journalArticle

Crystallization
insulators
crystallization
eutectics
softening
4 Citations (Scopus)

The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)

Abidin, M. S. Z., Morshed, T., Chikita, H., Kinoshita, Y., Muta, S., Anisuzzaman, M., Park, J. H., Matsumura, R., Mahmood, M. R., Sadoh, T. & Hashim, A. M., Mar 6 2014, In : Materials. 7, 2, p. 1409-1421 13 p.

Research output: Contribution to journalArticle

Melting
Annealing
Chemical analysis
Temperature
Crystal orientation
25 Citations (Scopus)

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

Chikita, H., Matsumura, R., Kai, Y., Sadoh, T. & Miyao, M., Nov 17 2014, In : Applied Physics Letters. 105, 20, 202112.

Research output: Contribution to journalArticle

inoculation
solid phases
melting
high speed
insulators
2013
4 Citations (Scopus)

Atomically-coherent-coalescence of two growth-fronts in Ge stripes on insulator by rapid-melting lateral-crystallization

Kurosawa, M., Toko, K., Sadoh, T., Mizushim, I. & Miyao, M., Nov 18 2013, In : ECS Journal of Solid State Science and Technology. 2, 3

Research output: Contribution to journalArticle

Crystallization
Coalescence
Melting
Magnetoelectronics
Transistors
11 Citations (Scopus)

Crystallization of electrodeposited germanium thin film on silicon (100)

Abidin, M. S. Z., Matsumura, R., Anisuzzaman, M., Park, J. H., Muta, S., Mahmood, M. R., Sadoh, T. & Hashim, A. M., Dec 5 2013, In : Materials. 6, 11, p. 5047-5057 11 p.

Research output: Contribution to journalArticle

Germanium
Silicon
Crystallization
Thin films
Raman scattering
Crystal orientation
Melting
Stabilization
Magnetoelectronics
Optoelectronic devices
14 Citations (Scopus)

High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Tojo, Y., Matsumura, R., Yokoyama, H., Kurosawa, M., Toko, K., Sadoh, T. & Miyao, M., Mar 4 2013, In : Applied Physics Letters. 102, 9, 092102.

Research output: Contribution to journalArticle

melting
insulators
temperature
seeds
profiles
1 Citation (Scopus)

High-quality hybrid-GeSn/Ge stacked-structures by low-temperature Sn induced-melting growth

Kinoshita, Y., Matsumura, R., Sadoh, T., Nishimura, T. & Miyao, M., Jan 1 2013, In : ECS Transactions. 58, 9, p. 179-184 6 p.

Research output: Contribution to journalArticle

Melting
Annealing
Liquid phase epitaxy
Electron transitions
Temperature
3 Citations (Scopus)

Laterally-graded doping into ge-on-insulator by combination of ion-implantation and rapid-melting growth

Matsumura, R., Anisuzzaman, M., Yokoyama, H., Sadoh, T. & Miyao, M., Jul 26 2013, In : ECS Solid State Letters. 2, 7

Research output: Contribution to journalArticle

Ion implantation
Melting
Doping (additives)
Electric fields
Ions

Liquid-solid coexisting annealing of a-GeSn/Si(100) structure for low temperature epitaxial growth of SiGe

Chikita, H., Matsumura, R., Sadoh, T. & Miyao, M., Jan 1 2013, In : ECS Transactions. 58, 9, p. 257-262 6 p.

Research output: Contribution to journalArticle

Epitaxial growth
Annealing
Liquids
Temperature
Integrated circuits
12 Citations (Scopus)

Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

Heya, A., Kanda, K., Toko, K., Sadoh, T., Amano, S., Matsuo, N., Miyamoto, S., Miyao, M. & Mochizuki, T., May 1 2013, In : Thin Solid Films. 534, p. 334-340 7 p.

Research output: Contribution to journalArticle

Germanium
Crystallization
Amorphous silicon
amorphous silicon
germanium
1 Citation (Scopus)

Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

Sadoh, T., Park, J. H., Kurosawa, M. & Miyao, M., Jan 1 2013, In : ECS Transactions. 58, 9, p. 213-221 9 p.

Research output: Contribution to journalArticle

Flexible electronics
Crystal orientation
Crystallization
Metals
Crystals
56 Citations (Scopus)

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °c)

Park, J. H., Suzuki, T., Kurosawa, M., Miyao, M. & Sadoh, T., Aug 19 2013, In : Applied Physics Letters. 103, 8, 082102.

Research output: Contribution to journalArticle

insulators
nucleation
crystallization
gold
retarding
1 Citation (Scopus)

Orientation-control of ge-stripes-on-insulator by narrowing in rapid-melting growth from SI(111) seed

Anisuzzaman, M., Muta, S., Takahashi, M., Hashim, A. M. & Sadoh, T., Jul 26 2013, In : ECS Solid State Letters. 2, 9, p. P76-P78

Research output: Contribution to journalArticle

Seed
Melting
Strain relaxation
Functional materials
Carrier mobility
Melting
Magnetoelectronics
Epitaxial layers
Epitaxial growth
Crystal orientation
2012

Effects of dose on activation characteristics of P in Ge

Anisuzzaman, M. & Sadoh, T., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3255-3258 4 p.

Research output: Contribution to journalArticle

Chemical activation
activation
dosage
solid phases
Annealing
47 Citations (Scopus)

Enhanced interfacial-nucleation in al-induced crystallization for (111) Oriented Si1-xGex (0 ≤ x ≤ 1) films on insulating substrates

Kurosawa, M., Kawabata, N., Sadoh, T. & Miyao, M., Dec 1 2012, In : ECS Journal of Solid State Science and Technology. 1, 3, p. P144-P147

Research output: Contribution to journalArticle

Quartz
Crystallization
Nucleation
Oxides
Substrates
1 Citation (Scopus)

Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

Sadoh, T., Kurosawa, M., Heya, A., Matsuo, N. & Miyao, M., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3276-3278 3 p.

Research output: Contribution to journalArticle

Tensile strain
laser annealing
Modulation
Annealing
linings
10 Citations (Scopus)

Epitaxial-template structure utilizing Ge-on-insulator stripe arrays with nanospacing for advanced heterogeneous integration on Si platform

Hashim, A. M., Anisuzzaman, M., Muta, S., Sadoh, T. & Miyao, M., Jun 1 2012, In : Japanese journal of applied physics. 51, 6 PART 2, 06FF04.

Research output: Contribution to journalArticle

agglomeration
templates
Agglomeration
platforms
insulators
24 Citations (Scopus)

Growth-rate-dependent laterally graded SiGe profiles on insulator by cooling-rate controlled rapid-melting-growth

Matsumura, R., Tojo, Y., Kurosawa, M., Sadoh, T., Mizushima, I. & Miyao, M., Dec 10 2012, In : Applied Physics Letters. 101, 24, 241904.

Research output: Contribution to journalArticle

melting
insulators
cooling
profiles
falling
28 Citations (Scopus)

Hybrid-orientation Ge-on-insulator structures on (100) Si platform by Si micro-seed formation combined with rapid-melting growth

Kurosawa, M., Kawabata, N., Sadoh, T. & Miyao, M., Apr 23 2012, In : Applied Physics Letters. 100, 17, 172107.

Research output: Contribution to journalArticle

seeds
platforms
melting
insulators
crystallization
25 Citations (Scopus)

Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M. & Sadoh, T., Feb 1 2012, In : Thin Solid Films. 520, 8, p. 3293-3295 3 p.

Research output: Contribution to journalArticle

Crystallization
insulators
crystallization
Substrates
Polysilicon