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Research Output 1993 2019

1993
32 Citations (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Dec 1 1993, In : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

Research output: Contribution to journalArticle

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
44 Citations (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Oct 1993, In : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
26 Citations (Scopus)

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., Jan 1 1993, In : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
22 Citations (Scopus)

Layer-by-layer growth of SiC at low temperatures

Sumakeris, J. J., Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Mar 25 1993, In : Thin Solid Films. 225, 1-2, p. 219-224 6 p.

Research output: Contribution to journalArticle

Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22 Citations (Scopus)

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Tanaka, S. & Davis, R. F., Jul 1993, In : Journal of Materials Research. 8, 7, p. 1477-1480 4 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
1994
69 Citations (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Tanaka, S., Kern, R. S. & Davis, R. F., Dec 1 1994, In : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

Research output: Contribution to journalArticle

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
2 Citations (Scopus)

Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Tanaka, S. & Wang, C., Dec 1 1994, In : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.

Research output: Contribution to journalConference article

Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides
1995
111 Citations (Scopus)

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., Dec 1 1995, In : Applied Physics Letters. 1 p.

Research output: Contribution to journalArticle

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
1996
35 Citations (Scopus)
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide
47 Citations (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Tanaka, S., Davis, R. F. & Harris, C. I., Nov 4 1996, In : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

Research output: Contribution to journalArticle

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
17 Citations (Scopus)

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., Jan 1 1996, In : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
23 Citations (Scopus)

Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 1996, In : Unknown Journal. 395, p. 3-13 11 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Thin films
Molecular beam epitaxy
12 Citations (Scopus)
Aluminum nitride
aluminum nitrides
Microstructural evolution
Silicon carbide
silicon carbides
277 Citations (Scopus)

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

Tanaka, S., Iwai, S. & Aoyagi, Y., Dec 23 1996, In : Applied Physics Letters. 69, 26, p. 4096-4098 3 p.

Research output: Contribution to journalArticle

assembling
surfactants
quantum dots
silanes
wetting
21 Citations (Scopus)

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Satoru, T., Kern, R. S., Davis, R. F., Wendelken, J. F. & Xu, J., Apr 20 1996, In : Surface Science. 350, 1-3, p. 247-253 7 p.

Research output: Contribution to journalArticle

Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
thin films
Gas source molecular beam epitaxy
1997

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 223-226 4 p.

Research output: Contribution to journalConference article

Gas source molecular beam epitaxy
Reflection high energy electron diffraction
Surface reconstruction
high energy electrons
molecular beam epitaxy
4 Citations (Scopus)

GaN quantum dots in AlxGa1-xN confined layer structures

Tanaka, S., Hirayama, H., Iwai, S. & Aoyagi, Y., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 449, p. 135-140 6 p.

Research output: Contribution to journalConference article

Semiconductor quantum dots
quantum dots
Surface-Active Agents
Silanes
Surface active agents
23 Citations (Scopus)

Gas-source molecular beam epitaxy of III-V nitrides

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Satoru, T. & Kern, R. S., Jan 1 1997, In : Journal of Crystal Growth. 178, 1-2, p. 87-101 15 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
3 Citations (Scopus)

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., Aug 1 1997, In : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
3 Citations (Scopus)

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., Feb 1 1997, In : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
18 Citations (Scopus)

Homoepitaxial SiC growth by molecular beam epitaxy

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., Jul 1997, In : Physica Status Solidi (B) Basic Research. 202, 1, p. 379-404 26 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Epilayers
Substrates
Temperature

InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties

Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 737-742 6 p.

Research output: Contribution to journalConference article

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
1 Citation (Scopus)

New Buffering Process in Preparation of Hiah Quality GaN Films

Hwang, J. S., Seong, S., Tanaka, S., Iwai, S., Aoyagi, Y. & Chong, P. J., Dec 1 1997, In : Bulletin of the Korean Chemical Society. 18, 11, p. 1133-1135 3 p.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Tanaka, S., Iwai, S. & Aoyagi, Y., Jan 1 1997, In : Journal of Crystal Growth. 170, 1-4, p. 329-334 6 p.

Research output: Contribution to journalArticle

Defect density
Buffer layers
buffers
defects
Metallorganic chemical vapor deposition
82 Citations (Scopus)

Simulated emission from optically pumped GaN quantum dots

Satoru, T., Hirayama, H., Aoyagi, Y., Narukawa, Y., Kawakami, Y., Fujita, S. & Fujita, S., Sep 8 1997, In : Applied Physics Letters. 71, 10, p. 1299-1301 3 p.

Research output: Contribution to journalArticle

stimulated emission
quantum dots
spontaneous emission
metalorganic chemical vapor deposition
radiant flux density
1998
14 Citations (Scopus)

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Tanaka, S. & Davis, R. F., Jan 1 1998, In : Journal of Materials Research. 13, 7, p. 1816-1822 7 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
2 Citations (Scopus)

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy

Satoru, T., Watanabe, M., Horita, Z. & Nemoto, M., Jan 1 1998, In : Journal of Electron Microscopy. 47, 1, p. 9-15 7 p.

Research output: Contribution to journalArticle

Microanalysis
Electron microscopy
electron microscopy
Electron Microscopy
Chemical analysis

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

Petersson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., Dec 1 1998, In : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4 Citations (Scopus)

Chemical beam epitaxy of GaN using triethylgallium and ammonia

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Jun 1 1998, In : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.

Research output: Contribution to journalArticle

Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
2 Citations (Scopus)

Growth mechanisms of GaN quantum dots and their optical properties

Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., Jan 1 1998, In : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
5 Citations (Scopus)
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen
132 Citations (Scopus)

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., Dec 1 1998, In : Applied Physics Letters. 72, 14, p. 1736-1738 3 p.

Research output: Contribution to journalArticle

assembling
quantum dots
photoluminescence
metalorganic chemical vapor deposition
indium
115 Citations (Scopus)

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., Dec 1 1998, In : Applied Physics Letters. 73, 8, p. 1104-1106 3 p.

Research output: Contribution to journalArticle

binding energy
quantum dots
excitons
electronic levels
shift
7 Citations (Scopus)

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Kern, R. S., Tanaka, S., Rowland, L. B. & Davis, R. F., Jan 1 1998, In : Journal of Crystal Growth. 183, 4, p. 581-593 13 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Silicon carbide
Reaction kinetics
silicon carbides
reaction kinetics
1 Citation (Scopus)

Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Jun 15 1998, In : Journal of Crystal Growth. 189-190, p. 147-152 6 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Reflection high energy electron diffraction
Growth temperature
63 Citations (Scopus)

The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., Dec 1 1998, In : Applied Physics Letters. 72, 3, p. 344-346 3 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
gases
high energy electrons
electron diffraction
free energy
1999
29 Citations (Scopus)

Cathodoluminescence spectroscopy and imaging of individual GaN dots

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., Jun 7 1999, In : Applied Physics Letters. 74, 23, p. 3513-3515 3 p.

Research output: Contribution to journalArticle

cathodoluminescence
luminescence
spectroscopy
scanning electron microscopy
positioning

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures

Petersson, A., Gustafsson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., Dec 1 1999, In : Physica Scripta T. 79, p. 56-59 4 p.

Research output: Contribution to journalArticle

AlGaN
cathodoluminescence
Luminescence
Scanning Electron Microscope
Photoluminescence
30 Citations (Scopus)

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., Sep 27 1999, In : Applied Physics Letters. 75, 13, p. 1935-1937 3 p.

Research output: Contribution to journalArticle

quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
30 Citations (Scopus)

Effect of indium doping on the transient optical properties of GaN films

Kumano, H., Hoshi, K. I., Tanaka, S., Suemune, I., Shen, X. Q., Riblet, P., Ramvall, P. & Aoyagi, Y., Nov 8 1999, In : Applied Physics Letters. 75, 19, p. 2879-2881 3 p.

Research output: Contribution to journalArticle

indium
optical properties
stimulated emission
spontaneous emission
excitation

Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., May 1999, In : Journal of Crystal Growth. 201, p. 402-406 5 p.

Research output: Contribution to journalConference article

Gas source molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Decomposition

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalArticle

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
2 Citations (Scopus)

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Tanaka, S., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

Research output: Contribution to journalArticle

Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
3 Citations (Scopus)

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hirayama, H., Tanaka, S. & Aoyagi, Y., Jun 1999, In : Microelectronic Engineering. 47, 1, p. 251-253 3 p.

Research output: Contribution to journalConference article

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
6 Citations (Scopus)

Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Hirayama, H., Satoru, T. & Aoyagi, Y., Jan 1 1999, In : Microelectronic Engineering. 49, 3-4, p. 287-290 4 p.

Research output: Contribution to journalComment/debate

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
15 Citations (Scopus)

GaN quantum structures with fractional dimension -from quantum well to quantum dot

Satoru, T., Suemune, I., Ramvall, P. & Aoyagi, Y., Jan 1 1999, In : Physica Status Solidi (B) Basic Research. 216, 1, p. 431-434 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
masking
38 Citations (Scopus)

Growth and luminescence properties of self-organized ZnSe quantum dots

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., Jul 12 1999, In : Applied Physics Letters. 75, 2, p. 235-237 3 p.

Research output: Contribution to journalArticle

quantum dots
luminescence
zinc
atomic force microscopy
photoluminescence
3 Citations (Scopus)

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Hwang, J. S., Tanaka, S., Iwai, S., Aoyagi, Y. & Seong, S., Apr 1 1999, In : Journal of Crystal Growth. 200, 1-2, p. 63-69 7 p.

Research output: Contribution to journalArticle

Gallium
Film growth
Buffer layers
gallium
buffers
20 Citations (Scopus)

Optical characterization of the "E2" deep level in GaN

Hacke, P., Ramvall, P., Satoru, T., Aoyagi, Y., Kuramata, A., Horino, K. & Munekata, H., Jan 25 1999, In : Applied Physics Letters. 74, 4, p. 543-545 3 p.

Research output: Contribution to journalArticle

photoionization
capacitance
activation energy
formulations
thresholds
16 Citations (Scopus)

Semiconductor photonic dots: Visible wavelength-sized optical resonators

Suemune, I., Ueta, A., Avramescu, A., Satoru, T., Kumano, H. & Uesugi, K., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 1963-1965 3 p.

Research output: Contribution to journalArticle

optical resonators
photonics
optical reflection
optical resonance
wavelengths