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Research Output 1993 2019

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32 Citations (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Dec 1 1993, In : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

Research output: Contribution to journalArticle

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
14 Citations (Scopus)

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Tanaka, S. & Davis, R. F., Jan 1 1998, In : Journal of Materials Research. 13, 7, p. 1816-1822 7 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
4 Citations (Scopus)

Analysis of vibrational properties of C-doped hexagonal boron nitride (h-BN)

Islam, M. S., Ushida, K., Tanaka, S., Makino, T. & Hashimoto, A., Nov 1 2014, In : Computational Materials Science. 94, C, p. 225-233 9 p.

Research output: Contribution to journalArticle

Nitrides
Boron nitride
Phonon
boron nitrides
Hexagon
87 Citations (Scopus)

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

Satoru, T., Morita, K. & Hibino, H., Jan 6 2010, In : Physical Review B - Condensed Matter and Materials Physics. 81, 4, 041406.

Research output: Contribution to journalArticle

Graphite
Graphene
graphene
Desorption
desorption
20 Citations (Scopus)

Anisotropic transport in graphene on SiC substrate with periodic nanofacets

Odaka, S., Miyazaki, H., Li, S. L., Kanda, A., Morita, K., Satoru, T., Miyata, Y., Kataura, H., Tsukagoshi, K. & Aoyagi, Y., Feb 22 2010, In : Applied Physics Letters. 96, 6, 062111.

Research output: Contribution to journalArticle

graphene
electron mobility
field effect transistors
transport properties
slopes
151 Citations (Scopus)

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Tanaka, S., Takeuchi, M. & Aoyagi, Y., Aug 15 2000, In : Japanese Journal of Applied Physics, Part 2: Letters. 39, 8 B, p. L831-L834

Research output: Contribution to journalArticle

Dislocations (crystals)
Epitaxial growth
Nitrides
epitaxy
Semiconductor quantum dots
2 Citations (Scopus)

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy

Satoru, T., Watanabe, M., Horita, Z. & Nemoto, M., Jan 1 1998, In : Journal of Electron Microscopy. 47, 1, p. 9-15 7 p.

Research output: Contribution to journalArticle

Microanalysis
Electron microscopy
electron microscopy
Electron Microscopy
Chemical analysis
2 Citations (Scopus)

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Kamoi, S., Kisoda, K., Hasuike, N., Harima, H., Morita, K., Satoru, T., Hashimoto, A. & Hibino, H., May 1 2012, In : Diamond and Related Materials. 25, p. 80-83 4 p.

Research output: Contribution to journalArticle

Graphite
Epitaxial layers
Graphene
graphene
Imaging techniques
16 Citations (Scopus)

Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC (0001)

Shirasawa, T., Hayashi, K., Yoshida, H., Mizuno, S., Tanaka, S., Muro, T., Tamenori, Y., Harada, Y., Tokushima, T., Horikawa, Y., Kobayashi, E., Kinoshita, T., Shin, S., Takahashi, T., Ando, Y., Akagi, K., Tsuneyuki, S. & Tochihara, H., Jun 1 2009, In : Physical Review B - Condensed Matter and Materials Physics. 79, 24, 241301.

Research output: Contribution to journalArticle

oxynitrides
Silicon
silicon films
Energy gap
X rays
29 Citations (Scopus)

Cathodoluminescence spectroscopy and imaging of individual GaN dots

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., Jun 7 1999, In : Applied Physics Letters. 74, 23, p. 3513-3515 3 p.

Research output: Contribution to journalArticle

cathodoluminescence
luminescence
spectroscopy
scanning electron microscopy
positioning

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures

Petersson, A., Gustafsson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., Dec 1 1999, In : Physica Scripta T. 79, p. 56-59 4 p.

Research output: Contribution to journalArticle

AlGaN
cathodoluminescence
Luminescence
Scanning Electron Microscope
Photoluminescence
7 Citations (Scopus)

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

Brault, J., Bellet-Amalric, E., Tanaka, S., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., Rouviere, J. L., Feuillet, G. & Daudin, B., Nov 1 2003, In : Physica Status Solidi (B) Basic Research. 240, 2, p. 314-317 4 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Substrates
Atomic force microscopy
atomic force microscopy

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

Petersson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., Dec 1 1998, In : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4 Citations (Scopus)

Chemical beam epitaxy of GaN using triethylgallium and ammonia

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Jun 1 1998, In : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.

Research output: Contribution to journalArticle

Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
1 Citation (Scopus)

Coexistence of Two Types of Spin Splitting Originating from Different Symmetries

Yaji, K., Visikovskiy, A., Iimori, T., Kuroda, K., Hayashi, S., Kajiwara, T., Satoru, T., Komori, F. & Shin, S., Mar 29 2019, In : Physical Review Letters. 122, 12, 126403.

Research output: Contribution to journalArticle

symmetry
density distribution
inversions
periodic variations
textures
8 Citations (Scopus)

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

Petersson, A., Gustafsson, A., Samuelson, L., Tanaka, S. & Aoyagi, Y., Dec 1 2002, In : MRS Internet Journal of Nitride Semiconductor Research. 7

Research output: Contribution to journalArticle

Cathodoluminescence
Epitaxial films
Substrates
Atomic force microscopy
Scanning electron microscopy
30 Citations (Scopus)

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., Sep 27 1999, In : Applied Physics Letters. 75, 13, p. 1935-1937 3 p.

Research output: Contribution to journalArticle

quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
35 Citations (Scopus)
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide

Effect of 10B isotope and vacancy defects on the phonon modes of two-dimensional hexagonal boron nitride

Islam, M. S., Anindya, K. N., Bhuiyan, A. G., Tanaka, S., Makino, T. & Hashimoto, A., Feb 2018, In : Japanese Journal of Applied Physics. 57, 2, 02CB04.

Research output: Contribution to journalArticle

Boron nitride
boron nitrides
Vacancies
Isotopes
isotopes
12 Citations (Scopus)

Effect of boron and nitrogen doping with native point defects on the vibrational properties of graphene

Islam, M. S., Ushida, K., Tanaka, S., Makino, T. & Hashimoto, A., Nov 1 2014, In : Computational Materials Science. 94, C, p. 35-43 9 p.

Research output: Contribution to journalArticle

Point Defects
Boron
Graphite
Graphene
Point defects
30 Citations (Scopus)

Effect of indium doping on the transient optical properties of GaN films

Kumano, H., Hoshi, K. I., Tanaka, S., Suemune, I., Shen, X. Q., Riblet, P., Ramvall, P. & Aoyagi, Y., Nov 8 1999, In : Applied Physics Letters. 75, 19, p. 2879-2881 3 p.

Research output: Contribution to journalArticle

indium
optical properties
stimulated emission
spontaneous emission
excitation
10 Citations (Scopus)

Effect of vacancy defects on phonon properties of hydrogen passivated graphene nanoribbons

Islam, M. S., Tanaka, S. & Hashimoto, A., Jan 1 2014, In : Carbon. 80, 1, p. 146-154 9 p.

Research output: Contribution to journalArticle

Nanoribbons
Carbon Nanotubes
Graphite
Graphene
Vacancies
69 Citations (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Tanaka, S., Kern, R. S. & Davis, R. F., Dec 1 1994, In : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

Research output: Contribution to journalArticle

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
9 Citations (Scopus)

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Yurtsever, A., Onoda, J., Iimori, T., Niki, K., Miyamachi, T., Abe, M., Mizuno, S., Satoru, T., Komori, F. & Sugimoto, Y., Aug 3 2016, In : Small. p. 3956-3966 11 p.

Research output: Contribution to journalArticle

Graphite
Intercalation
Electronic properties
Graphene
Structural properties
47 Citations (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Tanaka, S., Davis, R. F. & Harris, C. I., Nov 4 1996, In : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

Research output: Contribution to journalArticle

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
3 Citations (Scopus)

Electrical characteristics of surface-stoichiometry-controlled p-GaN schottky contacts

Shiojima, K., Takahashi, T., Kaneda, N., Mishima, T., Kajiwara, T. & Tanaka, S., Jan 1 2013, In : Japanese journal of applied physics. 52, 1 PART2, 01AF05.

Research output: Contribution to journalArticle

Stoichiometry
stoichiometry
Defects
defects
Cooling
10 Citations (Scopus)

Electron beam irradiation effect for solid C60 epitaxy on graphene

Hashimoto, A., Terasaki, H., Yamamoto, A. & Satoru, T., Feb 1 2009, In : Diamond and Related Materials. 18, 2-3, p. 388-391 4 p.

Research output: Contribution to journalArticle

Graphite
Epitaxial growth
epitaxy
Graphene
Electron beams
44 Citations (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Oct 1993, In : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
39 Citations (Scopus)

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Shirasawa, T., Hayashi, K., Mizuno, S., Tanaka, S., Nakatsuji, K., Komori, F. & Tochihara, H., Mar 30 2007, In : Physical Review Letters. 98, 13, 136105.

Research output: Contribution to journalArticle

oxynitrides
silicon
silicon nitrides
silicates
electron diffraction

Erratum: Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy (Physical Review B (2013) 87 (121407(R)) DOI:10.1103/PhysRevB.87.121407)

Kajiwara, T., Nakamori, Y., Visikovskiy, A., Iimori, T., Komori, F., Nakatsuji, K., Mase, K. & Tanaka, S., Apr 19 2013, In : Physical Review B - Condensed Matter and Materials Physics. 87, 15, 159907.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Fabrication of conical micropore structure on silicon nitride/silicon using focused ion beam milling for biosensor application

Ariffin, N. H. Z., Yahaya, H., Shinano, S., Tanaka, S. & Hashim, A. M., May 2 2015, In : Microelectronic Engineering. 133, p. 1-5 5 p.

Research output: Contribution to journalArticle

Focused ion beams
Silicon
Silicon nitride
bioinstrumentation
Biosensors

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalArticle

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
2 Citations (Scopus)

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Tanaka, S., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

Research output: Contribution to journalArticle

Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
16 Citations (Scopus)

Few-layer epitaxial graphene grown on vicinal 6H-SiC studied by deep ultraviolet Raman spectroscopy

Kisoda, K., Kamoi, S., Hasuike, N., Harima, H., Morita, K., Tanaka, S. & Hashimoto, A., Jul 19 2010, In : Applied Physics Letters. 97, 3, 033108.

Research output: Contribution to journalArticle

ultraviolet spectroscopy
graphene
Raman spectroscopy
stress relaxation
subtraction
8 Citations (Scopus)

Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization

Kato, Y., Goto, M., Sato, R., Yamada, K., Koga, A., Tsutsui, K., Srey, C. & Satoru, T., Nov 25 2011, In : Surface and Coatings Technology. 206, 5, p. 990-993 4 p.

Research output: Contribution to journalArticle

carbonization
Carbonization
Microwaves
Plasmas
microwaves
100 Citations (Scopus)

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

Nakamura, S. I., Kimoto, T., Matsunami, H., Tanaka, S., Teraguchi, N. & Suzuki, A., Jun 5 2000, In : Applied Physics Letters. 76, 23, p. 3412-3414 3 p.

Research output: Contribution to journalArticle

etching
cells
bunching
inclination
atomic force microscopy
1 Citation (Scopus)

GaN quantum dot UV light emitting diode

Lee, J. S., Satoru, T., Ramvall, P. & Okagawa, H., 2003, In : Materials Research Society Symposium - Proceedings. 798, p. 11-16 6 p.

Research output: Contribution to journalArticle

Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
15 Citations (Scopus)

GaN quantum structures with fractional dimension -from quantum well to quantum dot

Satoru, T., Suemune, I., Ramvall, P. & Aoyagi, Y., Jan 1 1999, In : Physica Status Solidi (B) Basic Research. 216, 1, p. 431-434 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
masking
23 Citations (Scopus)

Gas-source molecular beam epitaxy of III-V nitrides

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Satoru, T. & Kern, R. S., Jan 1 1997, In : Journal of Crystal Growth. 178, 1-2, p. 87-101 15 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
26 Citations (Scopus)

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., Jan 1 1993, In : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
6 Citations (Scopus)

Graphene/SiC(0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene

Visikovskiy, A., Kimoto, S. I., Kajiwara, T., Yoshimura, M., Iimori, T., Komori, F. & Satoru, T., Dec 19 2016, In : Physical Review B. 94, 24, 245421.

Research output: Contribution to journalArticle

Graphite
Intercalation
intercalation
Electronic properties
Graphene
3 Citations (Scopus)

Graphene nanoribbons grown on epitaxial SixCyOz layer on Vicinal SiC(0001) surfaces by chemical vapor deposition

Hagihara, Y., Kajiwara, T., Visikovskiy, A. & Tanaka, S., May 1 2013, In : Applied Physics Express. 6, 5, 055102.

Research output: Contribution to journalArticle

Nanoribbons
Epitaxial layers
Graphene
Chemical vapor deposition
graphene
16 Citations (Scopus)

Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

Kajiwara, T., Nakamori, Y., Visikovskiy, A., Iimori, T., Komori, F., Nakatsuji, K., Mase, K. & Tanaka, S., Mar 21 2013, In : Physical Review B - Condensed Matter and Materials Physics. 87, 12, 121407.

Research output: Contribution to journalArticle

Nanoribbons
Carbon Nanotubes
Graphite
Molecular beam epitaxy
Graphene
3 Citations (Scopus)

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., Aug 1 1997, In : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
38 Citations (Scopus)

Growth and luminescence properties of self-organized ZnSe quantum dots

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., Jul 12 1999, In : Applied Physics Letters. 75, 2, p. 235-237 3 p.

Research output: Contribution to journalArticle

quantum dots
luminescence
zinc
atomic force microscopy
photoluminescence
2 Citations (Scopus)

Growth mechanisms of GaN quantum dots and their optical properties

Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., Jan 1 1998, In : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
3 Citations (Scopus)

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., Feb 1 1997, In : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
9 Citations (Scopus)

Growth of AlN-SiC solid solutions by sequential supply epitaxy

Avramescu, A., Hirayama, H., Aoyagi, Y. & Tanaka, S., Jan 1 2002, In : Journal of Crystal Growth. 234, 2-3, p. 435-439 5 p.

Research output: Contribution to journalArticle

Epitaxial growth
epitaxy
Solid solutions
solid solutions
Electron spectroscopy
17 Citations (Scopus)

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., Jan 1 1996, In : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
3 Citations (Scopus)

Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC

Endo, A., Komori, F., Morita, K., Kajiwara, T. & Satoru, T., May 1 2015, In : Journal of Low Temperature Physics. 179, 3-4, p. 237-250 14 p.

Research output: Contribution to journalArticle

Quantum Hall effect
Graphite
Graphene
graphene
quantum Hall effect