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Research Output 1993 2019

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2003
5 Citations (Scopus)

II-VI quantum dots grown by MOVPE

Suemune, I., Yoshida, K., Kumano, H., Tawara, T., Ueta, A. & Tanaka, S., Feb 2003, In : Journal of Crystal Growth. 248, p. 301-309 9 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Semiconductor quantum dots
quantum dots
Microcavities
photon-electron interaction
22 Citations (Scopus)

Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates

Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J. L., Daudin, B., Feuillet, G. & Nakagawa, H., Mar 1 2003, In : Journal of Applied Physics. 93, 5, p. 3108-3110 3 p.

Research output: Contribution to journalArticle

alignment
quantum dots
spatial distribution
molecular beam epitaxy
atomic force microscopy
14 Citations (Scopus)
Vapor phase epitaxy
Sapphire
sapphire
wafers
vapor phases
80 Citations (Scopus)

Self-ordering of nanofacets on vicinal sic surfaces

Nakagawa, H., Tanaka, S. & Suemune, I., Jan 1 2003, In : Physical Review Letters. 91, 22

Research output: Contribution to journalArticle

etching
control surfaces
flat surfaces
free energy
atomic force microscopy
9 Citations (Scopus)

Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy

Kato, J. I., Tanaka, S., Yamada, S. & Suemune, I., Aug 25 2003, In : Applied Physics Letters. 83, 8, p. 1569-1571 3 p.

Research output: Contribution to journalArticle

gallium nitrides
silicon carbides
molecular beam epitaxy
anisotropy
coalescing
2002
8 Citations (Scopus)

Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence

Petersson, A., Gustafsson, A., Samuelson, L., Tanaka, S. & Aoyagi, Y., Dec 1 2002, In : MRS Internet Journal of Nitride Semiconductor Research. 7

Research output: Contribution to journalArticle

Cathodoluminescence
Epitaxial films
Substrates
Atomic force microscopy
Scanning electron microscopy
9 Citations (Scopus)

Growth of AlN-SiC solid solutions by sequential supply epitaxy

Avramescu, A., Hirayama, H., Aoyagi, Y. & Tanaka, S., Jan 1 2002, In : Journal of Crystal Growth. 234, 2-3, p. 435-439 5 p.

Research output: Contribution to journalArticle

Epitaxial growth
epitaxy
Solid solutions
solid solutions
Electron spectroscopy
1 Citation (Scopus)

Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

Brault, J., Tanaka, S., Sarigiannidou, E., Nakagawa, H., Rouvière, J. L., Feuillet, G. & Daudin, B., Dec 1 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 939-942 4 p.

Research output: Contribution to journalArticle

Spatial distribution
Semiconductor quantum dots
bunching
periodic variations
flat surfaces
131 Citations (Scopus)

Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy

Ashrafi, A. B. M. A., Suemune, I., Kumano, H. & Satoru, T., Nov 15 2002, In : Japanese Journal of Applied Physics, Part 2: Letters. 41, 11 B

Research output: Contribution to journalArticle

Molecular beam epitaxy
Excitons
molecular beam epitaxy
Vapors
vapors
2001
2 Citations (Scopus)

Near K-edge absorption spectra of III-V nitrides

Fukui, K., Hirai, R., Yamamoto, A., Hirayama, H., Aoyagi, Y., Yamaguchi, S., Amano, H., Akasaki, I. & Satoru, T., Nov 1 2001, In : Physica Status Solidi (B) Basic Research. 228, 2, p. 461-465 5 p.

Research output: Contribution to journalArticle

Nitrides
nitrides
Absorption spectra
Synchrotron radiation
Aluminum
49 Citations (Scopus)

Nucleation and growth kinetics of AIN films on atomically smooth 6H-SiC (0001) surfaces

Yamada, S., Kato, J. I., Tanaka, S., Suemune, I., Avramescu, A., Aoyagi, Y., Teraguchi, N. & Suzuki, A., Jun 4 2001, In : Applied Physics Letters. 78, 23, p. 3612-3614 3 p.

Research output: Contribution to journalArticle

nucleation
kinetics
coalescing
defects
diffusion length

On phonon confinement effects and free carrier concentration in GaN quantum dots

Kuball, M., Gleize, J., Tanaka, S. & Aoyagi, Y., Nov 1 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 195-198 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Carrier concentration
quantum dots
Surface-Active Agents
Raman scattering
4 Citations (Scopus)

Quantum dot formation and crystal growth using an atomic nano-mask

Aoyagi, Y., Tanaka, S., Hirayama, H. & Takeuchi, M., Jan 1 2001, In : Physica E: Low-Dimensional Systems and Nanostructures. 11, 2-3, p. 89-93 5 p.

Research output: Contribution to journalArticle

Crystallization
Crystal growth
Semiconductor quantum dots
Masks
crystal growth
25 Citations (Scopus)

Resonant Raman scattering on self-assembled GaN quantum dots

Kuball, M., Gleize, J., Tanaka, S. & Aoyagi, Y., Feb 12 2001, In : Applied Physics Letters. 78, 7, p. 987-989 3 p.

Research output: Contribution to journalArticle

quantum dots
Raman spectra
barrier layers
phonons
excitation
2000
151 Citations (Scopus)

Anti-surfactant in III-nitride epitaxy - quantum dot formation and dislocation termination

Tanaka, S., Takeuchi, M. & Aoyagi, Y., Aug 15 2000, In : Japanese Journal of Applied Physics, Part 2: Letters. 39, 8 B, p. L831-L834

Research output: Contribution to journalArticle

Dislocations (crystals)
Epitaxial growth
Nitrides
epitaxy
Semiconductor quantum dots
100 Citations (Scopus)

Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching

Nakamura, S. I., Kimoto, T., Matsunami, H., Tanaka, S., Teraguchi, N. & Suzuki, A., Jun 5 2000, In : Applied Physics Letters. 76, 23, p. 3412-3414 3 p.

Research output: Contribution to journalArticle

etching
cells
bunching
inclination
atomic force microscopy
24 Citations (Scopus)

Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE

Tawara, T., Yoshida, H., Yogo, T., Satoru, T. & Suemune, I., Jan 1 2000, In : Journal of Crystal Growth. 221, 1-4, p. 699-703 5 p.

Research output: Contribution to journalArticle

Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Microcavities
Bragg reflectors
Vapor phase epitaxy
81 Citations (Scopus)

Optical properties of GaN quantum dots

Ramvall, P., Riblet, P., Nomura, S., Aoyagi, Y. & Satoru, T., Apr 15 2000, In : Journal of Applied Physics. 87, 8, p. 3883-3890 8 p.

Research output: Contribution to journalArticle

quantum dots
optical properties
photoluminescence
nonlinearity
vapor phase epitaxy

Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., Jan 1 2000, In : Journal of Electronic Materials. 29, 5, p. 515-519 5 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
quantum dots
standard deviation
Growth temperature
Surface potential
1999
29 Citations (Scopus)

Cathodoluminescence spectroscopy and imaging of individual GaN dots

Petersson, A., Gustafsson, A., Samuelson, L., Satoru, T. & Aoyagi, Y., Jun 7 1999, In : Applied Physics Letters. 74, 23, p. 3513-3515 3 p.

Research output: Contribution to journalArticle

cathodoluminescence
luminescence
spectroscopy
scanning electron microscopy
positioning

Cathodoluminescence Studies of Spontaneously Formed Low-dimensional AlGaN Structures

Petersson, A., Gustafsson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., Dec 1 1999, In : Physica Scripta T. 79, p. 56-59 4 p.

Research output: Contribution to journalArticle

AlGaN
cathodoluminescence
Luminescence
Scanning Electron Microscope
Photoluminescence
30 Citations (Scopus)

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., Sep 27 1999, In : Applied Physics Letters. 75, 13, p. 1935-1937 3 p.

Research output: Contribution to journalArticle

quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
30 Citations (Scopus)

Effect of indium doping on the transient optical properties of GaN films

Kumano, H., Hoshi, K. I., Tanaka, S., Suemune, I., Shen, X. Q., Riblet, P., Ramvall, P. & Aoyagi, Y., Nov 8 1999, In : Applied Physics Letters. 75, 19, p. 2879-2881 3 p.

Research output: Contribution to journalArticle

indium
optical properties
stimulated emission
spontaneous emission
excitation

Fabrication of self-assembling AIGaN quantum dot on AIGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Satoru, T., Dec 1 1999, In : Materials Research Society Symposium - Proceedings. 537

Research output: Contribution to journalArticle

assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
2 Citations (Scopus)

Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

Hirayama, H., Aoyagi, Y. & Tanaka, S., Dec 1 1999, In : MRS Internet Journal of Nitride Semiconductor Research. 4, SUPPL. 1

Research output: Contribution to journalArticle

Surface-Active Agents
Semiconductor quantum dots
Surface active agents
Fabrication
Organic chemicals
15 Citations (Scopus)

GaN quantum structures with fractional dimension -from quantum well to quantum dot

Satoru, T., Suemune, I., Ramvall, P. & Aoyagi, Y., Jan 1 1999, In : Physica Status Solidi (B) Basic Research. 216, 1, p. 431-434 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
masking
38 Citations (Scopus)

Growth and luminescence properties of self-organized ZnSe quantum dots

Tawara, T., Satoru, T., Kumano, H. & Suemune, I., Jul 12 1999, In : Applied Physics Letters. 75, 2, p. 235-237 3 p.

Research output: Contribution to journalArticle

quantum dots
luminescence
zinc
atomic force microscopy
photoluminescence
3 Citations (Scopus)

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

Hwang, J. S., Tanaka, S., Iwai, S., Aoyagi, Y. & Seong, S., Apr 1 1999, In : Journal of Crystal Growth. 200, 1-2, p. 63-69 7 p.

Research output: Contribution to journalArticle

Gallium
Film growth
Buffer layers
gallium
buffers
20 Citations (Scopus)

Optical characterization of the "E2" deep level in GaN

Hacke, P., Ramvall, P., Satoru, T., Aoyagi, Y., Kuramata, A., Horino, K. & Munekata, H., Jan 25 1999, In : Applied Physics Letters. 74, 4, p. 543-545 3 p.

Research output: Contribution to journalArticle

photoionization
capacitance
activation energy
formulations
thresholds
16 Citations (Scopus)

Semiconductor photonic dots: Visible wavelength-sized optical resonators

Suemune, I., Ueta, A., Avramescu, A., Satoru, T., Kumano, H. & Uesugi, K., Apr 5 1999, In : Applied Physics Letters. 74, 14, p. 1963-1965 3 p.

Research output: Contribution to journalArticle

optical resonators
photonics
optical reflection
optical resonance
wavelengths
12 Citations (Scopus)

Size-dependent optical nonlinearities in GaN quantum dots

Riblet, P., Tanaka, S., Ramvall, P., Nomura, S. & Aoyagi, Y., Jan 15 1999, In : Solid State Communications. 109, 6, p. 377-381 5 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Energy gap
nonlinearity
quantum dots
Photoexcitation
1998
14 Citations (Scopus)

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Tanaka, S. & Davis, R. F., Jan 1 1998, In : Journal of Materials Research. 13, 7, p. 1816-1822 7 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide
2 Citations (Scopus)

Application of ζ-factor method to Ti-Al-Cr system in analytical electron microscopy

Satoru, T., Watanabe, M., Horita, Z. & Nemoto, M., Jan 1 1998, In : Journal of Electron Microscopy. 47, 1, p. 9-15 7 p.

Research output: Contribution to journalArticle

Microanalysis
Electron microscopy
electron microscopy
Electron Microscopy
Chemical analysis

Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

Petersson, A., Tanaka, S., Aoyagi, Y. & Samuelson, L., Dec 1 1998, In : Materials Science Forum. 264-268, PART 2, p. 1335-1338 4 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Semiconductor quantum dots
quantum dots
Luminescence
4 Citations (Scopus)

Chemical beam epitaxy of GaN using triethylgallium and ammonia

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Jun 1 1998, In : Journal of Crystal Growth. 188, 1-4, p. 86-91 6 p.

Research output: Contribution to journalArticle

Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
2 Citations (Scopus)

Growth mechanisms of GaN quantum dots and their optical properties

Satoru, T., Ramvall, P., Nomura, S., Hirayama, H. & Aoyagi, Y., Jan 1 1998, In : Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi). 81, 6, p. 20-26 7 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Optical pumping
5 Citations (Scopus)
Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Nitrogen
nitrogen
132 Citations (Scopus)

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, H., Tanaka, S., Ramvall, P. & Aoyagi, Y., Dec 1 1998, In : Applied Physics Letters. 72, 14, p. 1736-1738 3 p.

Research output: Contribution to journalArticle

assembling
quantum dots
photoluminescence
metalorganic chemical vapor deposition
indium
115 Citations (Scopus)

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, P., Satoru, T., Nomura, S., Riblet, P. & Aoyagi, Y., Dec 1 1998, In : Applied Physics Letters. 73, 8, p. 1104-1106 3 p.

Research output: Contribution to journalArticle

binding energy
quantum dots
excitons
electronic levels
shift
7 Citations (Scopus)

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Kern, R. S., Tanaka, S., Rowland, L. B. & Davis, R. F., Jan 1 1998, In : Journal of Crystal Growth. 183, 4, p. 581-593 13 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Silicon carbide
Reaction kinetics
silicon carbides
reaction kinetics
1 Citation (Scopus)

Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Jun 15 1998, In : Journal of Crystal Growth. 189-190, p. 147-152 6 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Reflection high energy electron diffraction
Growth temperature
63 Citations (Scopus)

The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

Shen, X. Q., Tanaka, S., Iwai, S. & Aoyagi, Y., Dec 1 1998, In : Applied Physics Letters. 72, 3, p. 344-346 3 p.

Research output: Contribution to journalArticle

molecular beam epitaxy
gases
high energy electrons
electron diffraction
free energy
1997
23 Citations (Scopus)

Gas-source molecular beam epitaxy of III-V nitrides

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Satoru, T. & Kern, R. S., Jan 1 1997, In : Journal of Crystal Growth. 178, 1-2, p. 87-101 15 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Ammonia
Nitrides
nitrides
molecular beam epitaxy
3 Citations (Scopus)

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., Aug 1 1997, In : Diamond and Related Materials. 6, 10, p. 1282-1288 7 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Doping (additives)
Substrates
3 Citations (Scopus)

Growth of A1N and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., Feb 1 1997, In : Solid-State Electronics. 41, 2 SPEC. ISS., p. 129-134 6 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Molecular beam epitaxy
vapor phase epitaxy
18 Citations (Scopus)

Homoepitaxial SiC growth by molecular beam epitaxy

Kern, R. S., Järrendahl, K., Tanaka, S. & Davis, R. F., Jul 1997, In : Physica Status Solidi (B) Basic Research. 202, 1, p. 379-404 26 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Epilayers
Substrates
Temperature
1 Citation (Scopus)

New Buffering Process in Preparation of Hiah Quality GaN Films

Hwang, J. S., Seong, S., Tanaka, S., Iwai, S., Aoyagi, Y. & Chong, P. J., Dec 1 1997, In : Bulletin of the Korean Chemical Society. 18, 11, p. 1133-1135 3 p.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC

Tanaka, S., Iwai, S. & Aoyagi, Y., Jan 1 1997, In : Journal of Crystal Growth. 170, 1-4, p. 329-334 6 p.

Research output: Contribution to journalArticle

Defect density
Buffer layers
buffers
defects
Metallorganic chemical vapor deposition
82 Citations (Scopus)

Simulated emission from optically pumped GaN quantum dots

Satoru, T., Hirayama, H., Aoyagi, Y., Narukawa, Y., Kawakami, Y., Fujita, S. & Fujita, S., Sep 8 1997, In : Applied Physics Letters. 71, 10, p. 1299-1301 3 p.

Research output: Contribution to journalArticle

stimulated emission
quantum dots
spontaneous emission
metalorganic chemical vapor deposition
radiant flux density
1996
35 Citations (Scopus)
Gas source molecular beam epitaxy
Aluminum nitride
aluminum nitrides
Epitaxial growth
Silicon carbide