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Research Output 1993 2019

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Article
1996
47 Citations (Scopus)

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

Aboelfotoh, M. O., Kern, R. S., Tanaka, S., Davis, R. F. & Harris, C. I., Nov 4 1996, In : Applied Physics Letters. 69, 19, p. 2873-2875 3 p.

Research output: Contribution to journalArticle

metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
17 Citations (Scopus)

Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization

Davis, R. F., Satoru, T., Rowland, L. B., Kern, R. S., Sitar, Z., Ailey, S. K. & Wang, C., Jan 1 1996, In : Journal of Crystal Growth. 164, 1-4, p. 132-142 11 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Aluminum nitride
Silicon carbide
Nitrides
silicon carbides
23 Citations (Scopus)

Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE

Davis, R. F., Weeks, T. W., Bremser, M. D., Satoru, T., Kern, R. S., Sitar, Z., Ailey, K. S., Perry, W. G. & Wang, C., 1996, In : Unknown Journal. 395, p. 3-13 11 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Vapor phase epitaxy
Organometallics
Thin films
Molecular beam epitaxy
12 Citations (Scopus)
Aluminum nitride
aluminum nitrides
Microstructural evolution
Silicon carbide
silicon carbides
277 Citations (Scopus)

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

Tanaka, S., Iwai, S. & Aoyagi, Y., Dec 23 1996, In : Applied Physics Letters. 69, 26, p. 4096-4098 3 p.

Research output: Contribution to journalArticle

assembling
surfactants
quantum dots
silanes
wetting
21 Citations (Scopus)

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

Satoru, T., Kern, R. S., Davis, R. F., Wendelken, J. F. & Xu, J., Apr 20 1996, In : Surface Science. 350, 1-3, p. 247-253 7 p.

Research output: Contribution to journalArticle

Scanning tunneling microscopy
scanning tunneling microscopy
Thin films
thin films
Gas source molecular beam epitaxy
1995
111 Citations (Scopus)

Initial stage of aluminum nitride film growth on 6H-silicon carbide< by plasma-assisted, gas-source molecular beam epitaxy

Satoru, T., Kern, R. S. & Davis, R. F., Dec 1 1995, In : Applied Physics Letters. 1 p.

Research output: Contribution to journalArticle

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
positioning
1994
69 Citations (Scopus)

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Tanaka, S., Kern, R. S. & Davis, R. F., Dec 1 1994, In : Applied Physics Letters. 65, 22, p. 2851-2853 3 p.

Research output: Contribution to journalArticle

silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
1993
32 Citations (Scopus)

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Dec 1 1993, In : Applied Physics Letters. 62, 25, p. 3333-3335 3 p.

Research output: Contribution to journalArticle

aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
44 Citations (Scopus)

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Oct 1993, In : Journal of Materials Research. 8, 9, p. 2310-2314 5 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
26 Citations (Scopus)

Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC

Rowland, L. B., Kern, R. S., Satoru, T. & Davis, R. F., Jan 1 1993, In : Journal of Materials Research. 8, 11, p. 2753-2756 4 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Epitaxial films
Growth temperature
High resolution transmission electron microscopy
Ethylene
22 Citations (Scopus)

Layer-by-layer growth of SiC at low temperatures

Sumakeris, J. J., Rowland, L. B., Kern, R. S., Tanaka, S. & Davis, R. F., Mar 25 1993, In : Thin Solid Films. 225, 1-2, p. 219-224 6 p.

Research output: Contribution to journalArticle

Ellipsometry
ellipsometry
filaments
Transmission electron microscopy
transmission electron microscopy
22 Citations (Scopus)

Solid solutions of AIN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Tanaka, S. & Davis, R. F., Jul 1993, In : Journal of Materials Research. 8, 7, p. 1477-1480 4 p.

Research output: Contribution to journalArticle

Gas source molecular beam epitaxy
Plasma Gases
Aluminum nitride
aluminum nitrides
Silicon carbide