Research Output per year
Research Output 1993 2019
2000
4
Citations
(Scopus)
Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
Shen, X. Q., Ramvall, P., Riblet, P., Aoyagi, Y., Hosi, K., Satoru, T. & Suemune, I., Jan 1 2000, In : Journal of Crystal Growth. 209, 2-3, p. 396-400 5 p.Research output: Contribution to journal › Conference article
Gas source molecular beam epitaxy
Electric properties
molecular beam epitaxy
Optical properties
electrical properties
10
Citations
(Scopus)
MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast
Tawara, T., Suemune, I. & Satoru, T., Jan 1 2000, In : Journal of Crystal Growth. 214, p. 1019-1023 5 p.Research output: Contribution to journal › Conference article
Distributed Bragg reflectors
Metallorganic vapor phase epitaxy
Bragg reflectors
Refractive index
refractivity
1999
Enhancement of surface decomposition using supersonic beam: Direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy
Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Jan 1 1999, In : Journal of Crystal Growth. 201, p. 402-406 5 p.Research output: Contribution to journal › Conference article
Gas source molecular beam epitaxy
Semiconductor quantum dots
molecular beam epitaxy
quantum dots
Decomposition
3
Citations
(Scopus)
Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant
Hirayama, H., Satoru, T. & Aoyagi, Y., Jan 1 1999, In : Microelectronic Engineering. 47, 1, p. 251-253 3 p.Research output: Contribution to journal › Conference article
assembling
Surface-Active Agents
Semiconductor quantum dots
Surface active agents
surfactants
1997
Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE
Shen, X. Q., Satoru, T., Iwai, S. & Aoyagi, Y., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 223-226 4 p.Research output: Contribution to journal › Conference article
Gas source molecular beam epitaxy
Reflection high energy electron diffraction
Surface reconstruction
high energy electrons
molecular beam epitaxy
4
Citations
(Scopus)
GaN quantum dots in AlxGa1-xN confined layer structures
Satoru, T., Hirayama, H., Iwai, S. & Aoyagi, Y., Jan 1 1997, In : Materials Research Society Symposium - Proceedings. 449, p. 135-140 6 p.Research output: Contribution to journal › Conference article
Semiconductor quantum dots
quantum dots
Surface-Active Agents
Silanes
Surface active agents
InGaN quantum dots fabricated on AlGaN surfaces - growth mechanism and optical properties
Hirayama, H., Satoru, T., Ramvall, P. & Aoyagi, Y., Dec 1 1997, In : Materials Research Society Symposium - Proceedings. 482, p. 737-742 6 p.Research output: Contribution to journal › Conference article
Semiconductor quantum dots
Optical properties
quantum dots
optical properties
Photoluminescence
1994
2
Citations
(Scopus)
Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy
Davis, R. F., Ailey, K. S., Kern, R. S., Kester, D. J., Sitar, Z., Smith, L., Satoru, T. & Wang, C., Dec 1 1994, In : Materials Research Society Symposium - Proceedings. 339, p. 351-362 12 p.Research output: Contribution to journal › Conference article
Molecular beam epitaxy
Silicon carbide
Nitrides
silicon carbides
carbides