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Fingerprint Dive into the research topics where Wataru Saito is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Research Output

  • 2050 Citations
  • 22 h-Index
  • 38 Conference contribution
  • 29 Article
  • 8 Conference article
  • 3 Paper

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

Takeuchi, K., Fukui, M., Saraya, T., Itou, K., Takakura, T., Suzuki, S., Numasawa, Y., Shigyo, N., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A., Saito, W., Nishizawa, S. I., Tsukuda, M., Omura, I. & 2 others, Ohashi, H. & Hiramoto, T., May 2020, In : IEEE Transactions on Semiconductor Manufacturing. 33, 2, p. 159-165 7 p., 8986674.

Research output: Contribution to journalArticle

  • 3300V Scaled IGBTs Driven by 5V Gate Voltage

    Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Wakabayashi, H., Tsutsui, K., Iwai, H., Ogura, A. & 4 others, Nishizawa, S. I., Omura, I., Ohashi, H. & Hiramoto, T., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 43-46 4 p. 8757626. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 2 Citations (Scopus)

    Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

    Saraya, T., Itou, K., Takakura, T., Fukui, M., Suzuki, S., Takeuchi, K., Tsukuda, M., Numasawa, Y., Satoh, K., Matsudai, T., Saito, W., Kakushima, K., Hoshii, T., Furukawa, K., Watanabe, M., Shigyo, N., Tsutsui, K., Iwai, H., Ogura, A., Nishizawa, S. & 3 others, Omura, I., Ohashi, H. & Hiramoto, T., Jan 16 2019, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 8.4.1-8.4.4 8614491. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

    Luo, P., Ekkanath Madathil, S. N., Nishizawa, S. I. & Saito, W., Dec 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993596. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • High Accurate IGBT/IEGT Compact Modeling for Prediction of Power Efficiency and EMI Noise

    Mizoguchi, T., Sakiyama, Y., Tsukamoto, N. & Saito, W., May 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Institute of Electrical and Electronics Engineers Inc., p. 307-310 4 p. 8757656. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2019-May).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution