Physics
Adatoms
8%
Adsorption
11%
Algorithms
6%
Alloy
6%
Atoms
21%
Calculation
29%
Crystal Growth
6%
Crystals
10%
Decomposition
9%
Differences
6%
Dislocation
8%
Energy Gaps (Solid State)
6%
Entropy
7%
First-Principles
10%
Gases
21%
Growth
92%
Growth Rate
8%
High Temperature
6%
Hydrogen
8%
Impurities
13%
Ingot
8%
Kinetics
7%
Laser
6%
Laser Pulse
6%
Metalorganic Vapor Phase Epitaxy
19%
Model
18%
Molecular Beam Epitaxy
9%
Nitrogen
13%
Phase Diagrams
8%
Pressure
17%
Ratios
16%
Region
14%
Rotation
6%
Silicon
16%
Simulation
11%
Sites
8%
Solid State
18%
Solidification
12%
Stability
19%
Structural Stability
6%
Substrates
20%
Temperature
18%
Thermal Conductivity
9%
Thermodynamic Analysis
20%
Thermodynamics
25%
Thin Films
22%
Vapor
5%
Vapor Phase
9%
Vapor Phase Epitaxy
28%
Zinc Sulfide
8%
Chemistry
Ab Initio Calculation
9%
Adatoms
11%
Adsorption
7%
Ammonia
9%
Analytical Method
10%
Aqueous Solution
6%
Atom
28%
Chemical Kinetics Characteristics
6%
Chemical Potential
9%
Chemical Reaction
11%
Concentration
9%
Crystal Growth
6%
Decomposition
14%
Density
6%
Desorption
12%
Diffusion
6%
Energy
17%
Enthalpy
9%
Entropy
7%
Epitaxial Growth
11%
First Principle
9%
Gas
9%
Hydrogen
6%
Impurity
7%
Interatomic Potential
6%
Liquid Film
6%
Metallorganic Chemical Vapor Deposition
13%
Molecular Dynamics
11%
Monte Carlo Method
12%
Nitrogen
7%
Organic Metal
15%
Partial Pressure
8%
Phase Composition
6%
Phase Diagrams
9%
Polarization
6%
Potential
10%
Pressure
12%
Procedure
34%
Reaction Temperature
22%
Semiconductor
8%
Simulation
6%
Solid
6%
Structure
14%
Surface
90%
Surface Reconstruction
8%
Thermal Conductivity
6%
Thermodynamic Analysis
7%
Thermodynamics
14%
Vapor Phase Epitaxy
27%
X-Ray Diffraction
9%
Material Science
Aluminum Nitride
49%
Buffer Layer
16%
Crystal
12%
Crystal Growth
9%
Defect
7%
Desorption
5%
Dislocation
10%
Epilayers
5%
Epitaxial Layer
5%
Gallium Arsenide
31%
Gallium Nitride
7%
Gas
21%
Growth Rate
6%
Impurity
12%
Liquid Films
18%
Material
11%
Metal
5%
Monolayers
6%
Nitride Semiconductor
8%
Semiconductor Material
7%
Silicon Nitride
5%
Solid
14%
Solution
10%
Solvent
5%
Surface
100%
Surface Reconstruction
7%
Temperature
12%
Thin Films
34%
Vapor Phase Epitaxy
14%
