β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence

Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

Research output: Contribution to journalArticle

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Abstract

We have investigated the growth of β-FeSi2 on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi2 deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi2 and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi2 grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface.

Original languageEnglish
Pages (from-to)8144-8148
Number of pages5
JournalThin Solid Films
Volume515
Issue number22
DOIs
Publication statusPublished - Aug 15 2007

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Photoluminescence
photoluminescence
augmentation
Substrates
crystallinity
Transmission electron microscopy
X ray diffraction
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence. / Akiyama, Kensuke; Itakura, Masaru; Kaneko, Satoru; Funakubo, Hiroshi; Maeda, Yoshihito.

In: Thin Solid Films, Vol. 515, No. 22, 15.08.2007, p. 8144-8148.

Research output: Contribution to journalArticle

Akiyama, Kensuke ; Itakura, Masaru ; Kaneko, Satoru ; Funakubo, Hiroshi ; Maeda, Yoshihito. / β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence. In: Thin Solid Films. 2007 ; Vol. 515, No. 22. pp. 8144-8148.
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