β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence

Kensuke Akiyama; Masaru Itakura; Satoru Kaneko; Hiroshi Funakubo; Yoshihito Maeda

doi:10.1016/j.tsf.2007.02.026

β-FeSi₂ growth on Cu-mediated Si substrate and enhancement of photoluminescence

Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We have investigated the growth of β-FeSi₂ on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi₂ deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi₂ and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi₂ grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface.

Original language	English
Pages (from-to)	8144-8148
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2007.02.026
Publication status	Published - Aug 15 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence",

abstract = "We have investigated the growth of β-FeSi2 on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi2 deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi2 and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi2 grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface.",

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T1 - β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence

AU - Akiyama, Kensuke

AU - Itakura, Masaru

AU - Kaneko, Satoru

AU - Funakubo, Hiroshi

AU - Maeda, Yoshihito

PY - 2007/8/15

Y1 - 2007/8/15

N2 - We have investigated the growth of β-FeSi2 on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi2 deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi2 and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi2 grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface.

AB - We have investigated the growth of β-FeSi2 on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi2 deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi2 and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi2 grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface.

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