Abstract
Low-temperature (<550℃) Al-induced crystallization (AIC) of amorphous Si_<1-x>Ge_x (x=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50%). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions (x=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates.
| Translated title of the contribution | Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange |
|---|---|
| Original language | Japanese |
| Pages (from-to) | 19-23 |
| Number of pages | 5 |
| Journal | IEICE technical report |
| Volume | 109 |
| Issue number | 20 |
| Publication status | Published - Apr 17 2009 |