Low-temperature (<550℃) Al-induced crystallization (AIC) of amorphous Si_<1-x>Ge_x (x=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50%). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions (x=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates.
|Translated title of the contribution||Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange|
|Number of pages||5|
|Journal||IEICE technical report|
|Publication status||Published - Apr 17 2009|