Abstract
Low-temperature (≤250℃) formation technique of orientation-controlled large-grain Ge thin films on insulator is desirable for realization of advanced flexible electronics. To achieve this, the Au-induced crystallization technique combined with inter-diffusion-control and interface-energy-modulation techniques has been investigated. Consequently, selective formation of (100) or (111)-oriented large-grain (>20 μm) Ge crystals on insulator have been realized. Moreover, formation of (111)-oriented large-grain Ge crystals directly on plastic substrates is demonstrated. This technique facilitates realization of future flexible electronics.
| Translated title of the contribution | Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth |
|---|---|
| Original language | Japanese |
| Pages (from-to) | 17-20 |
| Number of pages | 4 |
| Journal | IEICE technical report |
| Volume | 114 |
| Issue number | 2 |
| Publication status | Published - Apr 10 2014 |