極薄GeO2界面層を有するZr系high-k/Geゲートスタック構造の形成

Translated title of the contribution: Fabrication of Zr-Based High-k/Ge Gate Stack Structure with Ultra Thin GeO2 Interlayer

平山 佳奈, 岩村 義明, 上野 隆二, 楊 海貴, 王 冬, 中島 寛

Research output: Contribution to journalArticlepeer-review

Translated title of the contributionFabrication of Zr-Based High-k/Ge Gate Stack Structure with Ultra Thin GeO2 Interlayer
Original languageJapanese
Pages (from-to)5-11
Number of pages7
Journal九州大学大学院総合理工学報告
Volume32
Issue number3
DOIs
Publication statusPublished - Nov 2010

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