高圧巨大ひずみ加工によるバルク状 Si および Ge 半導体のナノ結晶化と準安定相創成

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@article{71b2efdbcc794a3abd7bba775570fa1a,

title = "高圧巨大ひずみ加工によるバルク状 Si および Ge 半導体のナノ結晶化と準安定相創成",

author = "Yoshifumi Ikoma",

year = "2021",

month = nov,

day = "1",

doi = "10.2320/materia.60.706",

language = "日本語",

volume = "60",

pages = "706--711",

journal = "まてりあ",

issn = "1884-5843",

publisher = "公益社団法人日本金属学会",

number = "11",

}