[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

X. Z. Liao; J. Zou; D. J.H. Cockayne; S. Matsumura

doi:10.1016/j.ultramic.2003.08.017

[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

X. Z. Liao, J. Zou, D. J.H. Cockayne, S. Matsumura

Quantum Sciences of Materials

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700°C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands.

Original language	English
Pages (from-to)	239-247
Number of pages	9
Journal	Ultramicroscopy
Volume	98
Issue number	2-4
DOIs	https://doi.org/10.1016/j.ultramic.2003.08.017
Publication status	Published - Jan 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Instrumentation

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10.1016/j.ultramic.2003.08.017

Cite this

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title = "[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)",

abstract = "Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700°C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands.",

author = "Liao, {X. Z.} and J. Zou and Cockayne, {D. J.H.} and S. Matsumura",

note = "Funding Information: The Ge(Si)/Si(0 0 1) sample was provided by Professor Z. M. Jiang of Fudan University, China. This work is supported by the Australian Research Council. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2004",

month = jan,

doi = "10.1016/j.ultramic.2003.08.017",

language = "English",

volume = "98",

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journal = "Ultramicroscopy",

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T1 - [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

AU - Liao, X. Z.

AU - Zou, J.

AU - Cockayne, D. J.H.

AU - Matsumura, S.

N1 - Funding Information: The Ge(Si)/Si(0 0 1) sample was provided by Professor Z. M. Jiang of Fudan University, China. This work is supported by the Australian Research Council. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/1

Y1 - 2004/1

N2 - Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700°C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands.

AB - Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700°C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands.

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JO - Ultramicroscopy

JF - Ultramicroscopy

IS - 2-4

ER -

[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1)

Abstract

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