0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission

Shunji Kimura, Yuhki Imai

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.

Original languageEnglish
Pages (from-to)2076-2082
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume44
Issue number11
DOIs
Publication statusPublished - Dec 1 1996
Externally publishedYes

Fingerprint

Noise figure
Light transmission
field effect transistors
amplifiers
high speed
Bandwidth
distributed amplifiers
Networks (circuits)
low frequencies
bandwidth
frequency ranges
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission. / Kimura, Shunji; Imai, Yuhki.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 44, No. 11, 01.12.1996, p. 2076-2082.

Research output: Contribution to journalArticle

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