0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission

Shunji Kimura; Yuhki Imai

doi:10.1109/22.543965

0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission

Shunji Kimura, Yuhki Imai

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.

Original language	English
Pages (from-to)	2076-2082
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	44
Issue number	11
DOIs	https://doi.org/10.1109/22.543965
Publication status	Published - Dec 1 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.",

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