Abstract
We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.
| Original language | English |
|---|---|
| Pages (from-to) | 2076-2082 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 44 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Dec 1 1996 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission. / Kimura, Shunji; Imai, Yuhki.
In: IEEE Transactions on Microwave Theory and Techniques, Vol. 44, No. 11, 01.12.1996, p. 2076-2082.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission
AU - Kimura, Shunji
AU - Imai, Yuhki
PY - 1996/12/1
Y1 - 1996/12/1
N2 - We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.
AB - We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.
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U2 - 10.1109/22.543965
DO - 10.1109/22.543965
M3 - Article
AN - SCOPUS:0030285684
VL - 44
SP - 2076
EP - 2082
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
SN - 0018-9480
IS - 11
ER -