0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission

Shunji Kimura, Yuhki Imai

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

We describe distributed amplifiers built using advanced circuit design techniques to improve gain and noise performance at low frequencies. Using these techniques, we have developed an amplifier IC with a 0-36 GHz bandwidth and a noise figure of 4 dB at low frequencies. This frequency range starting from 0 Hz makes it possible to use the IC as a baseband amplifier for SDH optical transmission systems and this noise figure is about 1 dB better than conventional distributed amplifiers. We also present another amplifier IC built using our loss compensation technique to improve high-frequency performance of the amplifier. This IC has a 0-44-GHz bandwidth, which is the widest among all reported GaAs MESFET baseband amplifiers.

Original languageEnglish
Pages (from-to)2076-2082
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume44
Issue number11
DOIs
Publication statusPublished - Dec 1 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '0-40 GHz GaAs MESFET distributed baseband amplifier IC's for high-speed optical transmission'. Together they form a unique fingerprint.

Cite this