0-40GHz GaAs MESFET 1:2 distributed signal distributor IC

S. Kimura; Y. Imai

doi:10.1049/el:19961130

0-40GHz GaAs MESFET 1:2 distributed signal distributor IC

Research output: Contribution to journal › Article › peer-review

Abstract

The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.

Original language	English
Pages (from-to)	1713-1715
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	18
DOIs	https://doi.org/10.1049/el:19961130
Publication status	Published - Jan 1 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1049/el:19961130

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abstract = "The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.",

author = "S. Kimura and Y. Imai",

year = "1996",

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doi = "10.1049/el:19961130",

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AB - The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.

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