Abstract
The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.
Original language | English |
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Pages (from-to) | 1713-1715 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 32 |
Issue number | 18 |
DOIs | |
Publication status | Published - Jan 1 1996 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering