Abstract
The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.
| Original language | English |
|---|---|
| Pages (from-to) | 1713-1715 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 32 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - Jan 1 1996 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering