0-40GHz GaAs MESFET 1:2 distributed signal distributor IC

S. Kimura, Y. Imai

Research output: Contribution to journal › Article

Abstract

The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ∼1.3dB and a bandwidth of ∼40GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.

Original languageEnglish
Pages (from-to)1713-1715
Number of pages3
JournalElectronics Letters
Volume32
Issue number18
DOIs
Publication statusPublished - Jan 1 1996
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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0-40GHz GaAs MESFET 1:2 distributed signal distributor IC. / Kimura, S.; Imai, Y.

In: Electronics Letters, Vol. 32, No. 18, 01.01.1996, p. 1713-1715.

Research output: Contribution to journal › Article

Kimura, S & Imai, Y 1996, '0-40GHz GaAs MESFET 1:2 distributed signal distributor IC', Electronics Letters, vol. 32, no. 18, pp. 1713-1715. https://doi.org/10.1049/el:19961130
Kimura S, Imai Y. 0-40GHz GaAs MESFET 1:2 distributed signal distributor IC. Electronics Letters. 1996 Jan 1;32(18):1713-1715. https://doi.org/10.1049/el:19961130
Kimura, S. ; Imai, Y. / 0-40GHz GaAs MESFET 1:2 distributed signal distributor IC. In: Electronics Letters. 1996 ; Vol. 32, No. 18. pp. 1713-1715.
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