0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines

S. Kimura, Y. Imai, S. Yamaguchi, K. Onodera

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A GaAs MESFET distributed baseband amplifier IC that uses a gate-line-division technique and 3D transmission lines is described. The amplifier IC has S11 < -13dB and S21 of 11.7dB in the 0 - 56GHz band. This is the widest band of all reported GaAs MESFET baseband amplifier ICs.

Original languageEnglish
Pages (from-to)93-95
Number of pages3
JournalElectronics Letters
Volume33
Issue number1
DOIs
Publication statusPublished - Jan 2 1997
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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0 - 56GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines. / Kimura, S.; Imai, Y.; Yamaguchi, S.; Onodera, K.

In: Electronics Letters, Vol. 33, No. 1, 02.01.1997, p. 93-95.

Research output: Contribution to journalArticle

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