0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C

S. Kimura, Y. Imai, Y. Umeda, T. Enoki

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

An InAIAs/lnGaAs/lnP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier 1C has a gain of 1OdB with a 0–90GHz bandwidth. This is the widest bandwidth among all reported baseband amplifier ICs to date.

Original languageEnglish
Pages (from-to)1430-1431
Number of pages2
JournalElectronics Letters
Volume31
Issue number17
DOIs
Publication statusPublished - Aug 17 1995

Fingerprint

High electron mobility transistors
Bandwidth
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C. / Kimura, S.; Imai, Y.; Umeda, Y.; Enoki, T.

In: Electronics Letters, Vol. 31, No. 17, 17.08.1995, p. 1430-1431.

Research output: Contribution to journalArticle

Kimura, S. ; Imai, Y. ; Umeda, Y. ; Enoki, T. / 0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C. In: Electronics Letters. 1995 ; Vol. 31, No. 17. pp. 1430-1431.
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