0–90 GHz InAlAs/InGaAs/InP HEMT distributed based and amplifier 1C

S. Kimura, Y. Imai, Y. Umeda, T. Enoki

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

An InAIAs/lnGaAs/lnP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier 1C has a gain of 1OdB with a 0–90GHz bandwidth. This is the widest bandwidth among all reported baseband amplifier ICs to date.

Original languageEnglish
Pages (from-to)1430-1431
Number of pages2
JournalElectronics Letters
Volume31
Issue number17
DOIs
Publication statusPublished - Aug 17 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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