1-5GHz wideband low noise amplifier using active inductor

A. I.A. Galal, R. K. Pokharel, H. Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm2 and presents better gain and noise figure performance.

Original languageEnglish
Title of host publication2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Proceedings
Pages193-196
Number of pages4
DOIs
Publication statusPublished - Dec 17 2010
Event2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Nanjing, China
Duration: Sep 20 2010Sep 23 2010

Publication series

Name2010 IEEE International Conference on Ultra-Wideband, ICUWB2010 - Proceedings
Volume1

Other

Other2010 IEEE International Conference on Ultra-Wideband, ICUWB2010
CountryChina
CityNanjing
Period9/20/109/23/10

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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