10 cm diameter mono cast Si growth and its characterization

Y. Miyamura; H. Harada; K. Jiptner; J. Chen; R. R. Prakash; J. Y. Li; T. Sekiguchi; T. Kojima; Y. Ohshita; A. Ogura; M. Fukuzawa; S. Nakano; B. Gao; Koichi Kakimoto

doi:10.4028/www.scientific.net/SSP.205-206.89

10 cm diameter mono cast Si growth and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, Koichi Kakimoto

Division of Renewable Energy Dynamics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XV
Publisher	Trans Tech Publications Ltd
Pages	89-93
Number of pages	5
ISBN (Print)	9783037858240
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.205-206.89
Publication status	Published - 2014
Event	15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom Duration: Sept 22 2013 → Sept 27 2013

Publication series

Name	Solid State Phenomena
Volume	205-206
ISSN (Print)	1012-0394

Other

Other	15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Country/Territory	United Kingdom
City	Oxford
Period	9/22/13 → 9/27/13

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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10.4028/www.scientific.net/SSP.205-206.89

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Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Li, J. Y., Sekiguchi, T., Kojima, T., Ohshita, Y., Ogura, A., Fukuzawa, M., Nakano, S., Gao, B., & Kakimoto, K. (2014). 10 cm diameter mono cast Si growth and its characterization. In Gettering and Defect Engineering in Semiconductor Technology XV (pp. 89-93). (Solid State Phenomena; Vol. 205-206). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.205-206.89

Miyamura, Y, Harada, H, Jiptner, K, Chen, J, Prakash, RR, Li, JY, Sekiguchi, T, Kojima, T, Ohshita, Y, Ogura, A, Fukuzawa, M, Nakano, S, Gao, B & Kakimoto, K 2014, 10 cm diameter mono cast Si growth and its characterization. in Gettering and Defect Engineering in Semiconductor Technology XV. Solid State Phenomena, vol. 205-206, Trans Tech Publications Ltd, pp. 89-93, 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, Oxford, United Kingdom, 9/22/13. https://doi.org/10.4028/www.scientific.net/SSP.205-206.89

@inproceedings{7f31631ed3a245c3bd9307cc78da3419,

title = "10 cm diameter mono cast Si growth and its characterization",

abstract = "To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.",

author = "Y. Miyamura and H. Harada and K. Jiptner and J. Chen and Prakash, {R. R.} and Li, {J. Y.} and T. Sekiguchi and T. Kojima and Y. Ohshita and A. Ogura and M. Fukuzawa and S. Nakano and B. Gao and Koichi Kakimoto",

year = "2014",

doi = "10.4028/www.scientific.net/SSP.205-206.89",

language = "English",

isbn = "9783037858240",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "89--93",

booktitle = "Gettering and Defect Engineering in Semiconductor Technology XV",

}

TY - GEN

T1 - 10 cm diameter mono cast Si growth and its characterization

AU - Miyamura, Y.

AU - Harada, H.

AU - Jiptner, K.

AU - Chen, J.

AU - Prakash, R. R.

AU - Li, J. Y.

AU - Sekiguchi, T.

AU - Kojima, T.

AU - Ohshita, Y.

AU - Ogura, A.

AU - Fukuzawa, M.

AU - Nakano, S.

AU - Gao, B.

AU - Kakimoto, Koichi

PY - 2014

Y1 - 2014

N2 - To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.

AB - To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.

UR - http://www.scopus.com/inward/record.url?scp=84886792777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886792777&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.205-206.89

DO - 10.4028/www.scientific.net/SSP.205-206.89

M3 - Conference contribution

AN - SCOPUS:84886792777

SN - 9783037858240

T3 - Solid State Phenomena

SP - 89

EP - 93

BT - Gettering and Defect Engineering in Semiconductor Technology XV

PB - Trans Tech Publications Ltd

T2 - 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013

Y2 - 22 September 2013 through 27 September 2013

ER -

10 cm diameter mono cast Si growth and its characterization

Abstract

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All Science Journal Classification (ASJC) codes

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