10 cm diameter mono cast Si growth and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J. Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, K. Kakimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages89-93
Number of pages5
ISBN (Print)9783037858240
DOIs
Publication statusPublished - Jan 1 2014
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: Sep 22 2013Sep 27 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Other

Other15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
CountryUnited Kingdom
CityOxford
Period9/22/139/27/13

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Li, J. Y., ... Kakimoto, K. (2014). 10 cm diameter mono cast Si growth and its characterization. In Gettering and Defect Engineering in Semiconductor Technology XV (pp. 89-93). (Solid State Phenomena; Vol. 205-206). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.205-206.89