1.0 THz one-sided directional slot antenna on 45 nm SOI CMOS

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a design of an one-sided directional slot antenna for 1THz frequency rage future telecommunication applications. The antenna was realized on the 45 nm SOI CMOS technology. The antenna was composed of the top antenna layer, thin dielectric inter layer and bottom floating metal layer. To enhance the bandwidth, 12 array antenna was designed which has 6.2 dBi antenna gain and 250GHz 3dB bandwidth at 1 THz in simulation.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages166-168
Number of pages3
ISBN (Electronic)9781728165066
DOIs
Publication statusPublished - Sep 2020
Event2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020 - Hiroshima, Japan
Duration: Sep 2 2020Sep 4 2020

Publication series

Name2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020

Conference

Conference2020 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2020
Country/TerritoryJapan
CityHiroshima
Period9/2/209/4/20

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Radiation

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