10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

Taiichi Otsuji, Kazutoshi Kato, Tadao Nagatsuma, Mikio Yoneyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.

Original languageEnglish
Title of host publicationIEEE LEOS Annual Meeting - Proceedings
PublisherIEEE
Pages203-204
Number of pages2
Volume2
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) - Boston, MA, USA
Duration: Oct 31 1994Nov 3 1994

Other

OtherProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)
CityBoston, MA, USA
Period10/31/9411/3/94

Fingerprint

Pulse generators
Electrooptical effects
Optoelectronic devices
Sampling
Bandwidth

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Otsuji, T., Kato, K., Nagatsuma, T., & Yoneyama, M. (1994). 10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices. In IEEE LEOS Annual Meeting - Proceedings (Vol. 2, pp. 203-204). IEEE.

10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices. / Otsuji, Taiichi; Kato, Kazutoshi; Nagatsuma, Tadao; Yoneyama, Mikio.

IEEE LEOS Annual Meeting - Proceedings. Vol. 2 IEEE, 1994. p. 203-204.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Otsuji, T, Kato, K, Nagatsuma, T & Yoneyama, M 1994, 10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices. in IEEE LEOS Annual Meeting - Proceedings. vol. 2, IEEE, pp. 203-204, Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2), Boston, MA, USA, 10/31/94.
Otsuji, Taiichi ; Kato, Kazutoshi ; Nagatsuma, Tadao ; Yoneyama, Mikio. / 10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices. IEEE LEOS Annual Meeting - Proceedings. Vol. 2 IEEE, 1994. pp. 203-204
@inproceedings{b094c01667eb40c19a82c561aec79b94,
title = "10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices",
abstract = "A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.",
author = "Taiichi Otsuji and Kazutoshi Kato and Tadao Nagatsuma and Mikio Yoneyama",
year = "1994",
language = "English",
volume = "2",
pages = "203--204",
booktitle = "IEEE LEOS Annual Meeting - Proceedings",
publisher = "IEEE",

}

TY - GEN

T1 - 10 to 72-Gb/s, optoelectronic RZ pulse-pattern generation and its application to on-wafer large-signal characterization for ultrahigh-speed electronic devices

AU - Otsuji, Taiichi

AU - Kato, Kazutoshi

AU - Nagatsuma, Tadao

AU - Yoneyama, Mikio

PY - 1994

Y1 - 1994

N2 - A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.

AB - A pulse-rate tunable, fully electrically controllable optoelectronic random pulse generator operating at 10 to 72 Gb/s in return-to-zero (RZ) mode and an on-wafer optical-to-electrical conversion stimulus probe head with 0.6-A/W responsivity, 200-mVpp saturation output, and a near 100-GHz bandwidth is addressed. Its application, in combination with electrooptic sampling (EOS), to characterizing an ultrawide band amplifier is also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0028714235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028714235&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028714235

VL - 2

SP - 203

EP - 204

BT - IEEE LEOS Annual Meeting - Proceedings

PB - IEEE

ER -