111)-oriented large-grain (50 um) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization

Jong Hyeok Park, Masanobu Miyao, Taizoh Sadoh

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Orientation-controlled large-grain Ge crystals grown on plastic substrates (softening temperature: 300 °C) are desired to realize advanced flexible electronics, where various functional devices are integrated on flexible substrates. To achieve this, gold-induced crystallization (annealing temperature: 250 °C) using a-Ge/Au stacked structures is developed on plastic substrates, where thin-Al2O3 layers (thickness: 7 nm) are introduced at a-Ge/Au interfaces. Interestingly, (111)-oriented nucleation at the Au/plastic interface dominates over random bulk nucleation in Au layers. As a result, the formation of (111)-oriented large-grain (;50 um) Ge crystals directly on flexible plastic substrates is realized. This technique will pave the way for advanced flexible electronics.

Original languageEnglish
Article number020302
JournalJapanese Journal of Applied Physics
Volume53
Issue number2 PART 1
DOIs
Publication statusPublished - Feb 10 2014

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plastics
Gold
Crystallization
crystallization
gold
Plastics
Flexible electronics
Crystals
Substrates
crystals
Nucleation
nucleation
electronics
Crystal orientation
softening
Annealing
Temperature
annealing
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

111)-oriented large-grain (50 um) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization. / Park, Jong Hyeok; Miyao, Masanobu; Sadoh, Taizoh.

In: Japanese Journal of Applied Physics, Vol. 53, No. 2 PART 1, 020302, 10.02.2014.

Research output: Contribution to journalArticle

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