(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Jong Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages231-234
Number of pages4
Publication statusPublished - Oct 31 2012
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: Jul 4 2012Jul 6 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
CountryJapan
CityKyoto
Period7/4/127/6/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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