1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

Original languageEnglish
Article number071903
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - Aug 24 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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