1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

Original languageEnglish
Article number071903
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - Aug 24 2007

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photoluminescence
crystallinity
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

1.54 μm photoluminescence from Β-Fe Si2 as-deposited film. / Akiyama, Kensuke; Kaneko, Satoru; Funakubo, Hiroshi; Itakura, Masaru.

In: Applied Physics Letters, Vol. 91, No. 7, 071903, 24.08.2007.

Research output: Contribution to journalArticle

Akiyama, Kensuke ; Kaneko, Satoru ; Funakubo, Hiroshi ; Itakura, Masaru. / 1.54 μm photoluminescence from Β-Fe Si2 as-deposited film. In: Applied Physics Letters. 2007 ; Vol. 91, No. 7.
@article{759733f236204d10a19f7b62a7621b94,
title = "1.54 μm photoluminescence from Β-Fe Si2 as-deposited film",
abstract = "The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.",
author = "Kensuke Akiyama and Satoru Kaneko and Hiroshi Funakubo and Masaru Itakura",
year = "2007",
month = "8",
day = "24",
doi = "10.1063/1.2770654",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - 1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

AU - Akiyama, Kensuke

AU - Kaneko, Satoru

AU - Funakubo, Hiroshi

AU - Itakura, Masaru

PY - 2007/8/24

Y1 - 2007/8/24

N2 - The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

AB - The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

UR - http://www.scopus.com/inward/record.url?scp=34548011267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548011267&partnerID=8YFLogxK

U2 - 10.1063/1.2770654

DO - 10.1063/1.2770654

M3 - Article

AN - SCOPUS:34548011267

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 071903

ER -