1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

Kensuke Akiyama; Satoru Kaneko; Hiroshi Funakubo; Masaru Itakura

doi:10.1063/1.2770654

1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

Original language	English
Article number	071903
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2770654
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2770654

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abstract = "The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.",

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AU - Akiyama, Kensuke

AU - Kaneko, Satoru

AU - Funakubo, Hiroshi

AU - Itakura, Masaru

PY - 2007

Y1 - 2007

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AB - The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.

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1.54 μm photoluminescence from Β-Fe Si2 as-deposited film

Abstract

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