The authors succeeded in preparing high-crystal-quality Β-Fe Si2 as-deposited film emitting a photoluminescence spectrum strong in intensity. The density of the nonradiative center at the interface and in the Β-Fe Si2 film remained low by depositing a Cu-treated Si layer such as amorphous Si. The recrystallization of the Cu-treated Si layer during Β-Fe Si2 deposition contributed to improving the Β-Fe Si2 Si interface and the crystallinity of the Β-Fe Si2 film.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)