16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique

Shunji Kimura, Yuhki Imai, Yohtaro Umeda, Takatomo Enoki

Research output: Contribution to conferencePaper

29 Citations (Scopus)

Abstract

This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWP) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.

Original languageEnglish
Pages96-99
Number of pages4
Publication statusPublished - Dec 1 1994
Externally publishedYes
EventProceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA
Duration: Oct 16 1994Oct 19 1994

Conference

ConferenceProceedingsof the 1994 IEEE GaAs IC Symposium
CityPhiladelphia, PA, USA
Period10/16/9410/19/94

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kimura, S., Imai, Y., Umeda, Y., & Enoki, T. (1994). 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique. 96-99. Paper presented at Proceedingsof the 1994 IEEE GaAs IC Symposium, Philadelphia, PA, USA, .