Abstract
This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWP) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.
| Original language | English |
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| Pages | 96-99 |
| Number of pages | 4 |
| Publication status | Published - Dec 1 1994 |
| Externally published | Yes |
| Event | Proceedingsof the 1994 IEEE GaAs IC Symposium - Philadelphia, PA, USA Duration: Oct 16 1994 → Oct 19 1994 |
Conference
| Conference | Proceedingsof the 1994 IEEE GaAs IC Symposium |
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| City | Philadelphia, PA, USA |
| Period | 10/16/94 → 10/19/94 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering