+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

Ghazal A. Fahmy, H. Kanaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

Original languageEnglish
Title of host publicationICM 2016 - 28th International Conference on Microelectronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
ISBN (Electronic)9781509057214
DOIs
Publication statusPublished - Jul 2 2016
Event28th International Conference on Microelectronics, ICM 2016 - Giza, Egypt
Duration: Dec 17 2016Dec 20 2016

Publication series

NameProceedings of the International Conference on Microelectronics, ICM
Volume0

Other

Other28th International Conference on Microelectronics, ICM 2016
CountryEgypt
CityGiza
Period12/17/1612/20/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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