+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

Ghazal A. Fahmy, H. Kanaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

Original languageEnglish
Title of host publicationICM 2016 - 28th International Conference on Microelectronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
ISBN (Electronic)9781509057214
DOIs
Publication statusPublished - Jul 2 2016
Event28th International Conference on Microelectronics, ICM 2016 - Giza, Egypt
Duration: Dec 17 2016Dec 20 2016

Publication series

NameProceedings of the International Conference on Microelectronics, ICM
Volume0

Other

Other28th International Conference on Microelectronics, ICM 2016
CountryEgypt
CityGiza
Period12/17/1612/20/16

Fingerprint

Low noise amplifiers
Noise figure
Linearization
Ultra-wideband (UWB)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Fahmy, G. A., & Kanaya, H. (2016). +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. In ICM 2016 - 28th International Conference on Microelectronics (pp. 337-340). [7847884] (Proceedings of the International Conference on Microelectronics, ICM; Vol. 0). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2016.7847884

+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. / Fahmy, Ghazal A.; Kanaya, H.

ICM 2016 - 28th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers Inc., 2016. p. 337-340 7847884 (Proceedings of the International Conference on Microelectronics, ICM; Vol. 0).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fahmy, GA & Kanaya, H 2016, +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. in ICM 2016 - 28th International Conference on Microelectronics., 7847884, Proceedings of the International Conference on Microelectronics, ICM, vol. 0, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, 28th International Conference on Microelectronics, ICM 2016, Giza, Egypt, 12/17/16. https://doi.org/10.1109/ICM.2016.7847884
Fahmy GA, Kanaya H. +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. In ICM 2016 - 28th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers Inc. 2016. p. 337-340. 7847884. (Proceedings of the International Conference on Microelectronics, ICM). https://doi.org/10.1109/ICM.2016.7847884
Fahmy, Ghazal A. ; Kanaya, H. / +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications. ICM 2016 - 28th International Conference on Microelectronics. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 337-340 (Proceedings of the International Conference on Microelectronics, ICM).
@inproceedings{6411e8e8fd8b4498919215ece5c345fa,
title = "+1dBm IIP3, low noise amplifier for ultra-wide band wireless applications",
abstract = "An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.",
author = "Fahmy, {Ghazal A.} and H. Kanaya",
year = "2016",
month = "7",
day = "2",
doi = "10.1109/ICM.2016.7847884",
language = "English",
series = "Proceedings of the International Conference on Microelectronics, ICM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "337--340",
booktitle = "ICM 2016 - 28th International Conference on Microelectronics",
address = "United States",

}

TY - GEN

T1 - +1dBm IIP3, low noise amplifier for ultra-wide band wireless applications

AU - Fahmy, Ghazal A.

AU - Kanaya, H.

PY - 2016/7/2

Y1 - 2016/7/2

N2 - An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

AB - An UWB low noise amplifier exploiting current reused and linearization technique was designed using 0.18 um CMOS process. Post-distortion (PD) technique has applied to improve the linearity. The proposed design achieves +1dBm IIP3 measurement result, around 3dB noise figure, high and flat S21 of 15 dB, over a frequency range 3.1-10.6 GHz simulation results. The proposed design has consumed 18mW. The total chip area is 1.18mm2.

UR - http://www.scopus.com/inward/record.url?scp=85014912031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014912031&partnerID=8YFLogxK

U2 - 10.1109/ICM.2016.7847884

DO - 10.1109/ICM.2016.7847884

M3 - Conference contribution

AN - SCOPUS:85014912031

T3 - Proceedings of the International Conference on Microelectronics, ICM

SP - 337

EP - 340

BT - ICM 2016 - 28th International Conference on Microelectronics

PB - Institute of Electrical and Electronics Engineers Inc.

ER -