TY - GEN
T1 - 1THz one-sided directional slot antenna on a chip connected with InAs HEMT
AU - Kanaya, Haruichi
AU - Takigawa, Ryo
AU - Tasaki, Kohei
AU - Kato, Kazutoshi
AU - Asano, Tanemasa
N1 - Funding Information:
This work was partly supported by VLSI Design and Education Center (VTEC), the University of Tokyo in collaboration with CADENCE Corporation and Keysight Technologies. This work was partly supported by KAKENHI (18K04146) and CREST (JPMJCR1431), JSPS Japan. This work was also partially supported by the Grant-in-Aid for the Collaborative Research Program Based on Industrial Demand, JST. This work was partially supported by the Cabinet Office (CAO), Cross-ministerial Strategic Innovation Promotion Program (SIP), “An intelligent knowledge processing infrastructure, integrating physical and virtual domains” (funding agency: NEDO). This work was partly supported by the Strategic Information and Communications R&D Promotion Programme (SCOPE) MIC Japan.
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PY - 2020
Y1 - 2020
N2 - Terahertz (THz) range holds between infrared light and millimeter wave or microwave radiation. Moreover, THz waves is highly attenuated by the metal object or sensitive to an inter-molecular binding force. Therefore, imaging using THz range is attracted much attention for security, manufacturing, chemical imaging, and so on. In our research, the THz detector composed of Indium arsenide (InAs) high electron mobility transistor (HEMT) and one-sided directional slot antenna on a chip will be developed. In this paper, we focused on the antenna on a chip. The proposed antenna has three layers, namely, top antenna metal, dielectric substrate (BCB, benzocyclobutene) and bottom floating metal layer. There are a coplanar (CPW) feed lines and slots on the top antenna metal. By optimizing the size of the bottom floating metal layer, the radiation toward the back side is suppressed. The CPW feed line is connected the gate electrode on the InAs HEMT. In order to maximize the receiving THz signal form the antenna to InAs HEMT, antenna and gate input impedance is characterized by using the 3D electromagnetic simulator. It has been found that when the input impedance of the gate electrode changes from 10 ohms to 50 ohms, the voltage generated at the gate electrodes is tripled. The antenna was fabricated by the conventional photolithography process. The size of the radiation metal is 290 μm x 210 μm on the top metal with probe pads. The measured antenna gain is 5.57 dBi at 0.93 THz compared with the 5.96 dBi antenna gain at 1 THz from the simulation.
AB - Terahertz (THz) range holds between infrared light and millimeter wave or microwave radiation. Moreover, THz waves is highly attenuated by the metal object or sensitive to an inter-molecular binding force. Therefore, imaging using THz range is attracted much attention for security, manufacturing, chemical imaging, and so on. In our research, the THz detector composed of Indium arsenide (InAs) high electron mobility transistor (HEMT) and one-sided directional slot antenna on a chip will be developed. In this paper, we focused on the antenna on a chip. The proposed antenna has three layers, namely, top antenna metal, dielectric substrate (BCB, benzocyclobutene) and bottom floating metal layer. There are a coplanar (CPW) feed lines and slots on the top antenna metal. By optimizing the size of the bottom floating metal layer, the radiation toward the back side is suppressed. The CPW feed line is connected the gate electrode on the InAs HEMT. In order to maximize the receiving THz signal form the antenna to InAs HEMT, antenna and gate input impedance is characterized by using the 3D electromagnetic simulator. It has been found that when the input impedance of the gate electrode changes from 10 ohms to 50 ohms, the voltage generated at the gate electrodes is tripled. The antenna was fabricated by the conventional photolithography process. The size of the radiation metal is 290 μm x 210 μm on the top metal with probe pads. The measured antenna gain is 5.57 dBi at 0.93 THz compared with the 5.96 dBi antenna gain at 1 THz from the simulation.
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U2 - 10.1117/12.2543439
DO - 10.1117/12.2543439
M3 - Conference contribution
AN - SCOPUS:85083758946
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII
A2 - Sadwick, Laurence P.
A2 - Yang, Tianxin
PB - SPIE
T2 - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII 2020
Y2 - 3 February 2020 through 6 February 2020
ER -