1THz one-sided directional slot antenna on a chip connected with InAs HEMT

Haruichi Kanaya, Ryo Takigawa, Kohei Tasaki, Kazutoshi Kato, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Terahertz (THz) range holds between infrared light and millimeter wave or microwave radiation. Moreover, THz waves is highly attenuated by the metal object or sensitive to an inter-molecular binding force. Therefore, imaging using THz range is attracted much attention for security, manufacturing, chemical imaging, and so on. In our research, the THz detector composed of Indium arsenide (InAs) high electron mobility transistor (HEMT) and one-sided directional slot antenna on a chip will be developed. In this paper, we focused on the antenna on a chip. The proposed antenna has three layers, namely, top antenna metal, dielectric substrate (BCB, benzocyclobutene) and bottom floating metal layer. There are a coplanar (CPW) feed lines and slots on the top antenna metal. By optimizing the size of the bottom floating metal layer, the radiation toward the back side is suppressed. The CPW feed line is connected the gate electrode on the InAs HEMT. In order to maximize the receiving THz signal form the antenna to InAs HEMT, antenna and gate input impedance is characterized by using the 3D electromagnetic simulator. It has been found that when the input impedance of the gate electrode changes from 10 ohms to 50 ohms, the voltage generated at the gate electrodes is tripled. The antenna was fabricated by the conventional photolithography process. The size of the radiation metal is 290 μm x 210 μm on the top metal with probe pads. The measured antenna gain is 5.57 dBi at 0.93 THz compared with the 5.96 dBi antenna gain at 1 THz from the simulation.

Original languageEnglish
Title of host publicationTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII
EditorsLaurence P. Sadwick, Tianxin Yang
PublisherSPIE
ISBN (Electronic)9781510633216
DOIs
Publication statusPublished - 2020
EventTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII 2020 - San Francisco, United States
Duration: Feb 3 2020Feb 6 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11279
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII 2020
CountryUnited States
CitySan Francisco
Period2/3/202/6/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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