200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics

H. Jäderström, Yu Murin, Yu Babain, M. Chubarov, V. Pljuschev, M. Zubkov, P. Nomokonov, N. Olsson, J. Blomgren, U. Tippawan, L. Westerberg, P. Golubev, B. Jakobsson, L. Gerén, P. E. Tegnér, I. Zartova, A. Budzanowski, B. Czech, I. Skwirczynska, V. KondratievH. H.K. Tang, J. Aichelin, Yukinobu Watanabe, K. K. Gudima

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Abstract

An experimental study of nuclear reactions between Si28 nuclei at 200 and 300 MeV/nucleon and hydrogen or deuterium target nuclei was performed at the CELSIUS storage ring in Uppsala, Sweden, to collect information about the reactions responsible for single-event effects in microelectronics. Inclusive data on Si28 fragmentation, as well as data on correlations between recoils and spectator protons or α particles are compared to predictions from the Dubna cascade model and the Japan Atomic Energy Research Institute version of the quantum molecular dynamics model. The comparison shows satisfactory agreement for inclusive data except for He fragments where low-energy sub-barrier fragments and recoiling fragments with very large momenta are produced much more frequently than predicted. The yield of exclusive data are also severely underestimated by the models whereas the charge distributions of recoils in these correlations compare well. The observed enhancement in He emission, which may well be important for the description of single-event effects, is most likely to be attributed to α clustering in Si28 nuclei.

Original languageEnglish
Article number044601
JournalPhysical Review C - Nuclear Physics
Volume77
Issue number4
DOIs
Publication statusPublished - Apr 7 2008

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microelectronics
nuclear reactions
fragments
nuclei
recoilings
Sweden
nuclear energy
dynamic models
charge distribution
deuterium
Japan
cascades
fragmentation
molecular dynamics
momentum
protons
augmentation
hydrogen
predictions
energy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics

Cite this

Jäderström, H., Murin, Y., Babain, Y., Chubarov, M., Pljuschev, V., Zubkov, M., ... Gudima, K. K. (2008). 200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics. Physical Review C - Nuclear Physics, 77(4), [044601]. https://doi.org/10.1103/PhysRevC.77.044601

200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics. / Jäderström, H.; Murin, Yu; Babain, Yu; Chubarov, M.; Pljuschev, V.; Zubkov, M.; Nomokonov, P.; Olsson, N.; Blomgren, J.; Tippawan, U.; Westerberg, L.; Golubev, P.; Jakobsson, B.; Gerén, L.; Tegnér, P. E.; Zartova, I.; Budzanowski, A.; Czech, B.; Skwirczynska, I.; Kondratiev, V.; Tang, H. H.K.; Aichelin, J.; Watanabe, Yukinobu; Gudima, K. K.

In: Physical Review C - Nuclear Physics, Vol. 77, No. 4, 044601, 07.04.2008.

Research output: Contribution to journalArticle

Jäderström, H, Murin, Y, Babain, Y, Chubarov, M, Pljuschev, V, Zubkov, M, Nomokonov, P, Olsson, N, Blomgren, J, Tippawan, U, Westerberg, L, Golubev, P, Jakobsson, B, Gerén, L, Tegnér, PE, Zartova, I, Budzanowski, A, Czech, B, Skwirczynska, I, Kondratiev, V, Tang, HHK, Aichelin, J, Watanabe, Y & Gudima, KK 2008, '200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics', Physical Review C - Nuclear Physics, vol. 77, no. 4, 044601. https://doi.org/10.1103/PhysRevC.77.044601
Jäderström, H. ; Murin, Yu ; Babain, Yu ; Chubarov, M. ; Pljuschev, V. ; Zubkov, M. ; Nomokonov, P. ; Olsson, N. ; Blomgren, J. ; Tippawan, U. ; Westerberg, L. ; Golubev, P. ; Jakobsson, B. ; Gerén, L. ; Tegnér, P. E. ; Zartova, I. ; Budzanowski, A. ; Czech, B. ; Skwirczynska, I. ; Kondratiev, V. ; Tang, H. H.K. ; Aichelin, J. ; Watanabe, Yukinobu ; Gudima, K. K. / 200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics. In: Physical Review C - Nuclear Physics. 2008 ; Vol. 77, No. 4.
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AU - Tang, H. H.K.

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