200 and 300 MeV/nucleon nuclear reactions responsible for single-event effects in microelectronics

H. Jäderström, Yu Murin, Yu Babain, M. Chubarov, V. Pljuschev, M. Zubkov, P. Nomokonov, N. Olsson, J. Blomgren, U. Tippawan, L. Westerberg, P. Golubev, B. Jakobsson, L. Gerén, P. E. Tegnér, I. Zartova, A. Budzanowski, B. Czech, I. Skwirczynska, V. KondratievH. H.K. Tang, J. Aichelin, Y. Watanabe, K. K. Gudima

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